Patents by Inventor Yueming Cai

Yueming Cai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11772037
    Abstract: The present invention discloses methods for extracting and recycling ammonia in MOCVD processes by FTrPSA. Through pretreatment, medium-shallow temperature PSA concentration, condensation and freezing, liquid ammonia vaporization, PSA ammonia extraction, and ammonia gas purification procedures, ammonia-containing exhaust gases from MOCVD processes are purified to meet the electronic-level ammonia gas standard required by the MOCVD processes, so as to implement recycling and reuse of the exhaust gases, where the ammonia gas yield is greater than or equal to 70-85%. The present invention solves the technical problem that atmospheric-pressure or low-pressure ammonia-containing exhaust gases in MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: October 3, 2023
    Assignee: Zhejiang Tiancaiyunji Technology Co., Ltd.
    Inventors: Lanhai Wang, Yaling Zhong, Yun Chen, Jincai Tang, Yueming Cai, Yuming Zhong
  • Patent number: 11344840
    Abstract: Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: May 31, 2022
    Assignee: SICHUAN TECHAIRS CO., LTD.
    Inventors: Yuming Zhong, Yun Chen, Kaili Liu, Yueming Cai
  • Patent number: 11179668
    Abstract: The present invention discloses methods for extracting and recycling hydrogen in an MOCVD process by FTrPSA. Through pretreatment, fine deamination, PSA hydrogen extraction, deep dehydration and hydrogen purification procedures, ammonia-containing waste hydrogen from an MOCVD process is purified to meet the electronic-level hydrogen (the purity is greater than or equal to 99.99999% v/v) standard required by the MOCVD process, to implement resource reuse of exhaust gases, where the hydrogen yield is greater than or equal to 75-86%. The present invention solves the technical problem that atmospheric-pressure or low-pressure waste hydrogen from MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: November 23, 2021
    Assignee: Zhejiang Tiancaiyunji Technology Co., Ltd.
    Inventors: Lanhai Wang, Yaling Zhong, Yun Chen, Jincai Tang, Yueming Cai, Yuming Zhong
  • Publication number: 20190366259
    Abstract: The present invention discloses methods for extracting and recycling hydrogen in an MOCVD process by FTrPSA. Through pretreatment, fine deamination, PSA hydrogen extraction, deep dehydration and hydrogen purification procedures, ammonia-containing waste hydrogen from an MOCVD process is purified to meet the electronic-level hydrogen (the purity is greater than or equal to 99.99999% v/v) standard required by the MOCVD process, to implement resource reuse of exhaust gases, where the hydrogen yield is greater than or equal to 75-86%. The present invention solves the technical problem that atmospheric-pressure or low-pressure waste hydrogen from MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.
    Type: Application
    Filed: May 28, 2019
    Publication date: December 5, 2019
    Applicant: Zhejiang Tiancaiyunji Technology Co.,Ltd.
    Inventors: Lanhai Wang, Yaling Zhong, Yun Chen, Jincai Tang, Yueming Cai, Yuming Zhong
  • Publication number: 20190366260
    Abstract: The present invention discloses methods for extracting and recycling ammonia in MOCVD processes by FTrPSA. Through pretreatment, medium-shallow temperature PSA concentration, condensation and freezing, liquid ammonia vaporization, PSA ammonia extraction, and ammonia gas purification procedures, ammonia-containing exhaust gases from MOCVD processes are purified to meet the electronic-level ammonia gas standard required by the MOCVD processes, so as to implement recycling and reuse of the exhaust gases, where the ammonia gas yield is greater than or equal to 70-85%. The present invention solves the technical problem that atmospheric-pressure or low-pressure ammonia-containing exhaust gases in MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.
    Type: Application
    Filed: May 28, 2019
    Publication date: December 5, 2019
    Applicant: Zhejiang Tiancaiyunji Technology Co.,Ltd.
    Inventors: Lanhai Wang, Yaling Zhong, Yun Chen, Jincai Tang, Yueming Cai, Yuming Zhong
  • Publication number: 20190275460
    Abstract: Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 12, 2019
    Inventors: Yuming Zhong, Yun Chen, Kaili Liu, Yueming Cai
  • Publication number: 20180318750
    Abstract: A method for gas separation, purification and clarification by FTrPSA uses the temperature and pressure of different raw gases as well as the differences in adsorption separation coefficients and physicochemical properties among all components in the raw gases at a temperature range of ?80-200° C. and a pressure range of 0.03-4.
    Type: Application
    Filed: February 17, 2017
    Publication date: November 8, 2018
    Inventors: Yuming Zhong, Kaili Liu, Yun Chen, Yueming Cai
  • Patent number: 9334454
    Abstract: A method for producing synthesis natural gas using a straw gas, includes the steps of: pressurizing and heating a conventional straw gas, conveying the straw gas to a converter containing carbon monoxide and hydrogen to react therewith in the presence of nickel-based catalyst, so as to result in conversion gas mixture with main components of methane, carbon dioxide, water and impurity; and cooling, gas-liquid separating and purifying to obtain a synthesis natural gas with methane content of over 90%. The synthesis natural gas obtained according to the method of present invention has high energy utilization efficiency, and can not only be used for civilian by a conventional natural gas infrastructure, but also serve as an energy supply for a combustion engine or a small gas turbine.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: May 10, 2016
    Assignee: SICHUAN YALIAN TECHNOLOGY CO., TDL
    Inventors: Yaling Zhong, Yuming Zhong, Qiming Zeng, Yueming Cai, Tianhong Chen
  • Publication number: 20150299595
    Abstract: A method for producing synthesis natural gas using a straw gas, includes the steps of: pressurizing and heating a conventional straw gas, conveying the straw gas to a converter containing carbon monoxide and hydrogen to react therewith in the presence of nickel-based catalyst, so as to result in conversion gas mixture with main components of methane, carbon dioxide, water and impurity; and cooling, gas-liquid separating and purifying to obtain a synthesis natural gas with methane content of over 90%. The synthesis natural gas obtained according to the method of present invention has high energy utilization efficiency, and can not only be used for civilian by a conventional natural gas infrastructure, but also serve as an energy supply for a combustion engine or a small gas turbine.
    Type: Application
    Filed: April 15, 2011
    Publication date: October 22, 2015
    Inventors: Yaling Zhong, Yuming Zhong, Qiming Zeng, Yueming Cai, Tianhong Chen