Abstract: A solid-state imaging device according to the present embodiment includes a semiconductor region and an antireflection film. In the semiconductor region, a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged. The antireflection film includes a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film. At least one of the first insulating film and the second insulating film has a film thickness in a region through which light received by the blue photodiode is transmitted thinner than a film thickness in a region through which light received by the green photodiode is transmitted.