Abstract: The present invention provides a non-porous, breathable and waterproof transparent plastic film on a plastic substrate and methods for fabricating the same. The film includes a thermoplastic polyester resin, an amphiphilic modifier having a hydrophilic segment that acts as a channel for water vapor transmission through the film connected to a hydrophobic segment that anchors the amphiphilic modifier to a portion of the polyurethane base resin and a compatibilizer. The resultant non-porous, breathable and waterproof transparent plastic film has a water vapor transmission rate (WVTR) or breathability of not less than 250 g/m2/24 hr according to ASTM E96B, and having at least 90% of the transmittance. They are also resistant to liquid penetration and micro-contaminants such as bacteria and virus, making them suitable for broad applications in medical, healthcare and food packaging industries.

Abstract: The present invention provides a non-porous, breathable and waterproof transparent elastomer film and methods for fabricating the same. The film includes a polyurethane (PU) and an amphiphilic modifier having a hydrophilic segment that acts as a channel for water vapor transmission through the film connected to a hydrophobic segment that anchors the amphiphilic modifier to a portion of the polyurethane base resin. The resultant non-porous, breathable and waterproof transparent elastomer film has a water vapor transmission rate (WVTR) or breathability of not less than 300 g/m2/24 hr according to ASTM E96B, and having at least 90% of the transmittance. The film is also resistant to liquid penetration and micro-contaminants such as bacteria and virus, making it suitable for broad applications in medical, healthcare and food packaging industries.

Abstract: A white light interferometric fiber-optic gyroscope based on a rhombic optical path difference bias structure includes a laser, a rhombic optical path difference bias structure, a fiber coil and a photodetector. The white light interferometric fiber-optic gyroscope adopts an all-fiber structure to simplify the complexity of a gyroscope system and reduce the overall cost. A white light interferometric demodulation algorithm is used to realize linear output of rotation rate signals.

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ?D. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ?D is less than about 0.3 ?m, and the distance d1 is less than about 80 nm.

Abstract: A white light interferometric fiber-optic gyroscope based on a rhombic optical path difference bias structure includes a laser, a rhombic optical path difference bias structure, a fiber coil and a photodetector. The white light interferometric fiber-optic gyroscope adopts an all-fiber structure to simplify the complexity of a gyroscope system and reduce the overall cost. A white light interferometric demodulation algorithm is used to realize linear output of rotation rate signals.

Abstract: A transistor device includes a first unit subcell including having a first active region width extending in a first direction, and a second unit subcell having a second active region width extending in the first direction and arranged adjacent the first unit subcell in the first direction. The first unit subcell and the second unit subcell share a common drain contact and have separate gate contacts that are aligned in the first direction. Each unit subcell includes a field plate that is connected to a source contact outside the active region and that does not cross over the gate contact.

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ?D. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ?D is less than about 0.3 ?m, and the distance d1 is less than about 80 nm.

Abstract: A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.

Abstract: A miniature diaphragm-based fiber-optic tip FP pressure sensor, and fabrication method and application thereof. A miniature diaphragm-based fiber-optic tip FP pressure sensor includes an optical fiber, a hollow-core optical fiber, and a pressure sensing diaphragm, wherein the optical fiber and the hollow-core optical fiber have the same diameter, the two are spliced by arc welding; and the pressure sensing diaphragm is bonded to the endface of the hollow-core optical fiber by hydroxide catalysis bonding. The FP pressure sensor can not only realize the all-silica structure of a sensor, but also make the joint of each component free of organic polymer, and has extremely high long-term stability and thermal stability. Meanwhile, by means of a fabrication method of the miniature diaphragm-based fiber-optic tip FP pressure sensor, the application range and service life of the sensor are increased, and fabrication costs are reduced.

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

Abstract: A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.

Abstract: A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

Abstract: A transistor device is provided. The transistor device includes a substrate, a channel layer on the substrate, the channel layer including a GaN material, a barrier layer that is on the channel layer and that includes an AlGaN material, a drain electrode that is on the barrier layer in a drain region of the device, a source ohmic structure that is at least partially recessed into the barrier layer in a source region of the device, a source electrode that is on the source ohmic structure and a gate contact that is on the barrier layer and that is in a gate region of the device that is between the drain region and the source region.