Abstract: The present disclosure discloses a cross-linked hydrogel microneedle for transdermal drug delivery and a method for preparing the same. The preparation method includes the following steps: mixing a polyvinyl alcohol solution and a hyaluronic acid solution; freeze-thawing the mixed solution in a mold to obtain a gel with no fluidity; and demolding the gel and further performing irradiation cross-linking to obtain the cross-linked hydrogel microneedle. The preparation method described in the present disclosure overcomes the problem of poor stability that exists in the preparation by a freeze-thaw method and the problem of easy introduction of air bubbles that exists in the preparation by an irradiation method, and can increase the yield of the microneedles, which is conducive to mass production. The prepared microneedles can be transported and stored for a long time and have wide application prospects.

Abstract: In a semiconductor process, a seamless tungsten plug is formed in an inter-layer dielectric by forming the inter-layer dielectric from multiple oxide layers having different wet etch rates, from lowest wet-etch rate for the lowest layer to highest wet-etch rate for the highest layer, forming a hole or trench in the inter-layer dielectric using a dry etch process, reconfiguring the hole or trench to have sloped side walls by performing a wet etch step, and filling the hole or trench with tungsten and etching back the tungsten to form a seamless tungsten plug.

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.

Abstract: A system and method for detecting a shaft break in a turbofan gas turbine engine includes sensing fan rotational speed and sensing turbine engine rotational speed. A rate of change of rotational speed difference between the sensed fan rotational speed and the sensed turbine engine rotational speed is determined in a processor, and a determination that a shaft break has occurred is made in the processor based at least in part on the rate of change of the rotational speed difference.

Abstract: A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.

Abstract: Embodiments of a single lever turboprop control method and system are provided, which utilize torque-based and/or power-based scheduling to achieve a desired (e.g., substantially proportional) relationship between control lever position and the power output of a turboprop engine. In one embodiment, the method includes the step or process of monitoring, at an Engine Control Unit (ECU), for receipt of a Power Lever Angle (PLA) signal from a single lever control device. When a PLA control signal received at the ECU, a target torque or power output is established as a function of at least the PLA control signal. A first engine setpoint, such as a blade angle setpoint or an engine rotational speed setpoint, is determined utilizing the target torque output. An operational parameter of the turboprop engine is then adjusted in accordance with the first engine setpoint.

Abstract: An integrated circuit including a trench in the substrate with a high quality trench oxide grown on the sidewalls and the bottom of the trench where the ratio of the thickness of the high quality trench oxide formed on the sidewalls to the thickness formed on the bottom is less than 1.2. An integrated circuit including a trench with high quality oxide is formed by first growing a sacrificial oxide in dilute oxygen at a temperature in the range of 1050° C. to 1250° C., stripping the sacrificial oxide, growing high quality oxide in dilute oxygen plus trans 1,2 dichloroethylene at a temperature in the range of 1050° C. to 1250° C., and annealing the high quality oxide in an inert ambient at a temperature in the range of 1050° C. to 1250° C.

Abstract: Embodiments of a single lever turboprop control method and system are provided, which utilize torque-based and/or power-based scheduling to achieve a desired (e.g., substantially proportional) relationship between control lever position and the power output of a turboprop engine. In one embodiment, the method includes the step or process of monitoring, at an Engine Control Unit (ECU), for receipt of a Power Lever Angle (PLA) signal from a single lever control device. When a PLA control signal received at the ECU, a target torque or power output is established as a function of at least the PLA control signal. A first engine setpoint, such as a blade angle setpoint or an engine rotational speed setpoint, is determined utilizing the target torque output. An operational parameter of the turboprop engine is then adjusted in accordance with the first engine setpoint.

Abstract: A system and method of accommodating an uncontrolled high thrust condition in a turbofan gas turbine engine includes processing engine data from the turbofan gas turbine engine to determine when a potential for an uncontrolled high thrust condition exists. When the potential for an uncontrolled high thrust condition exists, the engine data are processed to determine whether corrective action for the uncontrolled high thrust condition should be implemented by varying turbofan gas turbine engine effective geometry to (i) increase turbofan gas turbine engine rotational speed or (ii) decrease turbofan gas turbine engine rotational speed. The determined corrective action is automatically implemented.

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.

Abstract: Embodiments of a single lever turboprop control method and system are provided, which utilize torque-based and/or power-based scheduling to achieve a desired (e.g., substantially proportional) relationship between control lever position and the power output of a turboprop engine. In one embodiment, the method includes the step or process of monitoring, at an Engine Control Unit (ECU), for receipt of a Power Lever Angle (PLA) signal from a single lever control device. When a PLA control signal received at the ECU, a target torque or power output is established as a function of at least the PLA control signal. A first engine setpoint, such as a blade angle setpoint or an engine rotational speed setpoint, is determined utilizing the target torque output. An operational parameter of the turboprop engine is then adjusted in accordance with the first engine setpoint.

Abstract: An semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material. A method for forming a semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material.

Abstract: A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.

Abstract: A system and method of detecting an uncontrolled high thrust (UHT) condition in a turbofan gas turbine engine includes processing data to determine when a current commanded fan speed value is greater than a predetermined speed value. A current UHT commanded fan speed value is processed to determine if it will cause a target fan speed value to increase, remain steady, or decrease. The target fan speed value is set equal to the current UHT commanded fan speed value when the current UHT commanded fan speed value will cause the target fan speed value to increase or remain steady, and to a deceleration threshold value when the current UHT commanded fan speed value will cause the target fan speed value to decrease. An uncontrolled high thrust alert signal is generated when actual engine fan speed exceeds the target fan speed value by a predetermined amount for a preset time period.

Abstract: An integrated circuit including a trench in the substrate with a high quality trench oxide grown on the sidewalls and the bottom of the trench where the ratio of the thickness of the high quality trench oxide formed on the sidewalls to the thickness formed on the bottom is less than 1.2. An integrated circuit including a trench with high quality oxide is formed by first growing a sacrificial oxide in dilute oxygen at a temperature in the range of 1050° C. to 1250° C., stripping the sacrificial oxide, growing high quality oxide in dilute oxygen plus trans 1,2 dichloroethylene at a temperature in the range of 1050° C. to 1250° C., and annealing the high quality oxide in an inert ambient at a temperature in the range of 1050° C. to 1250° C.

Abstract: A system and method for detecting a shaft break in a turbofan gas turbine engine includes sensing fan rotational speed and sensing turbine engine rotational speed. A rate of change of rotational speed difference between the sensed fan rotational speed and the sensed turbine engine rotational speed is determined in a processor, and a determination that a shaft break has occurred is made in the processor based at least in part on the rate of change of the rotational speed difference.

Abstract: A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.

Abstract: A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.

Abstract: A control system for an aircraft gas turbine propulsion engine includes an engine control that is adapted to receive at least engine inlet temperature data and aircraft altitude data. The engine control is configured to determine the availability of the engine inlet temperature data and implements a measured temperature engine thrust setting schedule when the engine inlet temperature data is available, and a default temperature engine thrust setting schedule when the engine inlet temperature data is unavailable. The default temperature engine thrust setting schedule ensures that the gas turbine propulsion engine will generate at least 90% of rated engine thrust at all actual engine inlet temperatures at the sensed aircraft altitude.