Patents by Inventor Yu-Feng Peng

Yu-Feng Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170323
    Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mrunal Abhijith KHADERBAD, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Patent number: 11985906
    Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Han-Ting Tsai, Qiang Fu, Chung-Te Lin
  • Publication number: 20240113221
    Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.
    Type: Application
    Filed: November 28, 2023
    Publication date: April 4, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
  • Patent number: 11942358
    Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mrunal Abhijith Khaderbad, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Patent number: 6129108
    Abstract: A fluid delivering system receives a fluid from a supplying device, transfers the fluid to an operational device and then dumps the used fluid into an extraction device. The fluid delivering system has a main pipeline system and at least a secondary pipeline system. Each pipeline system uses a first flow valve to control the back flow of fluid to a first flow controller, a second flow valve to protect a pressure gauge and a third flow valve to control the flow of fluid to a pressure controller. Through the relative positioning and the concerted actions of these three valves, any malfunctioning in the fluid delivering system can be detected quickly so that on-going processing operation can stop immediately to minimize product damages.
    Type: Grant
    Filed: December 3, 1999
    Date of Patent: October 10, 2000
    Assignees: United Semiconductor Corp, United Microelectronics Corp
    Inventors: Yu-Feng Peng, Ming-Fa Liu, Morris Chang, Mike Hou