Abstract: A USB active optical cable and a plug capable of managing power consumption and state. The USB active optical cable and plug respectively comprises a first plug, a second plug, and an optical transmission medium used to connect the first plug and the second plug; the first plug and the second plug are configured to operate different operating states, including an initialization mode, a transmission mode, and a power saving mode, and they can switch between the different operating states. The USB active optical cable and plug are both based on the separate control of the transmitting unit and the receiving unit to distinguish different operating modes, provide necessary operating requirements and mode switching conditions for each mode, and also enable the checking and transmission of the plugging state in the power saving mode, thus facilitate the power consumption management of the active optical cable.

Abstract: The present invention relates to a kind of magnetic heterojunction structure and the method of controlling and achieving spin logic and multiple-state storage functions. The said single magnetic heterojunction structure comprises the substrate, in-plane anti-ferromagnetic layer, in-plane ferromagnetic layer, nonmagnetic layer, vertical ferromagnetic layer, and vertical anti-ferromagnetic layer respectively from the bottom up; the said in-plane ferromagnetic layer and the said vertical ferromagnetic layer are coupled together through the said nonmagnetic layer in the middle; in-plane exchange biases, namely exchange biases in the plane, exist between the said in-plane ferromagnetic layer and the said in-plane anti-ferromagnetic layer, and out-of-plane exchange biases, namely exchange biases out of the plane, exist between the said vertical ferromagnetic layer and the said vertical anti-ferromagnetic layer.

Abstract: The present invention relates to a kind of magnetic heterojunction structure and the method of controlling and achieving spin logic and multiple-state storage functions. The said single magnetic heterojunction structure comprises the substrate, in-plane anti-ferromagnetic layer, in-plane ferromagnetic layer, nonmagnetic layer, vertical ferromagnetic layer, and vertical anti-ferromagnetic layer respectively from the bottom up; the said in-plane ferromagnetic layer and the said vertical ferromagnetic layer are coupled together through the said nonmagnetic layer in the middle; in-plane exchange biases, namely exchange biases in the plane, exist between the said in-plane ferromagnetic layer and the said in-plane anti-ferromagnetic layer, and out-of-plane exchange biases, namely exchange biases out of the plane, exist between the said vertical ferromagnetic layer and the said vertical anti-ferromagnetic layer.

Abstract: A ferromagnetic free layer, a preparation method and an application thereof are provided, where the ferromagnetic layer includes a magnetic film alloy, and the magnetic film alloy includes multiple layers of laminated films. A thickness of each of the films decreases gradually from a first end to a second end of the magnetic film alloy, so as to break in-plane structural symmetry of the magnetic film alloy, and the films include heavy metal films and ferromagnetic metal films, where out-of-plane crystal symmetry of the magnetic film alloy is broken by means of component gradients. When a current is applied in plane of the magnetic film alloy, a spin orbit torque will be generated, which directly drives the magnetic moment of the magnetic film alloy to undergo a deterministic magnetization reversal.

Abstract: Disclosed are an artificial antiferromagnetic structure and a storage element. The artificial antiferromagnetic structure includes a first metal layer, an artificially synthesized antiferromagnetic layer and a second metal layer that are stacked in sequence, wherein there is an interfacial DM (Dzyaloshinskii-Moriya) interaction at an interface between the metal layer and the artificially synthesized antiferromagnetic layer, such that there is a first interfacial DM interaction between the first metal layer and the artificially synthesized antiferromagnetic layer, there is a second interfacial DM interaction between the second metal layer and the artificially synthesized antiferromagnetic layer, and the first interfacial DM interaction is different from the second interfacial DM interaction. The artificially synthesized antiferromagnetic layer forms a stable chiral Néel magnetic domain wall due to a strong interfacial DM interaction.