Abstract: A magnetoresistance effect element includes a laminated body having a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, a first wiring connected to the laminated body, a sidewall insulating layer configured to cover at least a part of a side surface of the laminated body, a first electrode connected to a side of the laminated body opposite to the first wiring, and a second electrode and a third electrode provided on both sides of the laminated body with the sidewall insulating layer sandwiched therebetween, sandwiching the laminated body, and connected to the first wiring.

Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

Abstract: A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.

Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

Abstract: A magnetization rotation element includes: a spin-orbit torque wiring; a first ferromagnetic layer laminated on the spin-orbit torque wiring; and a low resistance layer laminated on a region that does not overlap the first ferromagnetic layer when viewed in a laminating direction of the spin-orbit torque wiring, the spin-orbit torque wiring includes a first region, a second region, and a third region, the first region overlaps the first ferromagnetic layer when viewed in the laminating direction, the second region does not overlap the first ferromagnetic layer and the low resistance layer when viewed in the laminating direction and is located between the first region and the third region, the third region overlaps the low resistance layer when viewed in the laminating direction, a resistivity of the low resistance layer is lower than that of the spin-orbit torque wiring, and the low resistance layer is thinner than the spin-orbit torque wiring.

Abstract: The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.

Abstract: A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.

Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.

Abstract: Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.

Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.

Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.

Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.

Abstract: Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.