Abstract: An adhesion interface observation method is adapted to observe a region in vicinity of an adhesion interface following adhesion and curing of an adhesive that is coated on adhered members and adheres the adhered members to each other. The adhesion interface observation method includes: exposing the cured adhesive by removing one of the adhered members; forming an observation region by cutting a predetermined part of the adhesive by a predetermined thickness; obliquely cutting the observation region in an oblique direction that is inclined with respect to a thickness direction of the observation region; and observing, by a surface-enhanced Raman scattering spectroscopy, Raman scattering light generated by applying excitation light to an observation possible region that is positioned on a side, of a part of the observation region having been subjected to the oblique cutting, on which a thickness of the part of the observation region is small.

Abstract: A pierce metal includes a head and a shaft. The shaft is configured to penetrate through an aluminum die-cast member with a protruded tip surface of the shaft being exposed from the aluminum die-cast member, and an outer peripheral surface of the shaft is configured to come into contact with a through-hole of the aluminum die-cast member, upon joining the aluminum die-cast member and the iron-based member together. The head and the iron-based member in contact with the protruded tip surface are configured to be held under pressure and applied with electric power by weld electrodes to perform spot welding of the protruded tip surface and the iron-based member, upon joining the aluminum die-cast member and the iron-based member together. The outer peripheral surface includes a non-contact part configured to come into non-contact with the through-hole in a state in which the shaft is penetrated through the aluminum die-cast member.

Abstract: A pierce metal includes a head and a shaft. The shaft is configured to penetrate through an aluminum die-cast member with a protruded tip surface of the shaft being exposed from the aluminum die-cast member, and an outer peripheral surface of the shaft is configured to come into contact with a through-hole of the aluminum die-cast member, upon joining the aluminum die-cast member and the iron-based member together. The head and the iron-based member in contact with the protruded tip surface are configured to be held under pressure and applied with electric power by weld electrodes to perform spot welding of the protruded tip surface and the iron-based member, upon joining the aluminum die-cast member and the iron-based member together. The outer peripheral surface includes a non-contact part configured to come into non-contact with the through-hole in a state in which the shaft is penetrated through the aluminum die-cast member.

Abstract: A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage.

Abstract: Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C).

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: A slot plate is provided at one surface of a dielectric window. The other surface of the dielectric window includes a flat surface surrounded by an annular first recess, and a plurality of second recesses formed at a bottom surface of the first recess. An antenna including the dielectric window and the slot plate provided at one surface of the dielectric window can be applied to the plasma processing apparatus.

Abstract: A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage.

Abstract: Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C).

Abstract: A method of fabricating a cordierite article from one or more steel slags such as blast furnace slag, converter slag and electric furnace slag. The cordierite article is useful for a particulate filter such as Diesel Particulate Filter.