Abstract: A method of fabricating a group III-nitride semiconductor includes the following steps of: forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.

Abstract: Defect selective passivation in semiconductor fabrication for reducing defects.

Abstract: A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products.

Abstract: A method of fabricating a group III-nitride semiconductor includes the following steps of forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.

Abstract: Defect selective passivation in semiconductor fabrication for reducing defects.

Abstract: A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products.

Abstract: A magnetic data recording medium substrate has a contact zone and a data zone. The contact zone is textured by forming multiple texturing features, each having a bell-shaped profile resembling a Gaussian curve. The features preferably are formed by pulsed laser energy applied to a glass substrate, or to an aluminum nickel-phosphorous substrate coated with a glass layer. As compared to previous laser texturing approaches, the laser beam is less narrowly focused to provide a beam impingement area with a diameter of at least three microns, forming texturing features with diameters of at least three microns. The texturing features preferably are uniform in height and diameter, and may be symmetrical or have asymmetrical aspects, so long as bell-shaped profiles are present in the direction of travel of the recording medium, relative to transducing heads.

Abstract: A method and apparatus to provide a substantially steady-state concentration of one or more molecular components, each molecular component having a different vapor pressure, to a vapor deposition chamber. Particularly, the method and apparatus will provide one or more molecular components whose concentration in the vapor deposition chamber, that is, whose weight average molecular weight does not vary with time by more than 50%, preferably by no more than 70%, during deposition of a particular lubricant.

Abstract: Spectral tilt controllers are provided for optical amplifiers and other optical network equipment used in fiber-optic communications links in fiber-optic networks. The tilt controllers may be used to adjust the gain or output power spectrum of an optical amplifier or to modify the optical data signal spectrum in other optical network equipment. Tilt controllers may use mechanical actuators to position a filter element substrate relative to an optical beam. Dielectric filters or other filter arrangements having various different spectral tilt characteristics may be implemented on the same substrate. Spectral tilt and average spectral attenuation values may be adjusted using the tilt controllers if desired.

Abstract: Processing two interference signals to reconstruct a target image includes splitting a laser beam into a reference beam and a measurement beam, and in turn splitting the reference beam into two sub-reference beams. A phase shift is introduced into one of the sub-reference beams, the phase shift being substantially 90 degrees. A measurement beam is reflected from a surface of a moving target, and split into two sub-measurement beams. A first respective sub-reference beam is combined with a first sub-measurement beam, and the second sub-reference beam is combined with the second sub-measurement beam, and the in phase and out of phase signals reconstruct the target surface. Adjustment of the split sub-reference beams is effected by Pockels cells to achieve the desired phase difference between the two sub-reference beams. The reconstructed motion of the target surface is effected with a selected frequency characteristic, spatial resolution and range characteristic.