Patents by Inventor Yuh-Jia Su
Yuh-Jia Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8058181Abstract: The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF, generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used.Type: GrantFiled: July 13, 2009Date of Patent: November 15, 2011Assignee: Novellus Systems, Inc.Inventors: David L. Chen, Yuh-Jia Su, Eddie Ka Ho Chiu, Maria Paola Pozzoli, Senzi Li, Giuseppe Colangelo, Simone Alba, Simona Petroni
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Patent number: 7569492Abstract: The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used.Type: GrantFiled: April 28, 2008Date of Patent: August 4, 2009Assignees: Novellus Systems, Inc., STMicroelectonics S.R.L.Inventors: David L. Chen, Yuh-Jia Su, Eddie Ka Ho Chiu, Maria Paola Pozzoli, Senzi Li, Giuseppe Colangelo, Simone Alba, Simona Petroni
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Publication number: 20080210168Abstract: A processing system is provided that has a single chamber in communication with multiple vertical processing tubes. The multiple tubes and boats are serviced by a single robotic substrate loading mechanism. A fluid supply feeds a fluid such as a gas or a vapor to at least one selectively isolatable portion of the system of the chamber, the boat loading area or one of the multiple vertical furnace processing tubes. With selective control of the atmosphere in the vertical processing tubes within the processing chamber, the wafers are processed so as to deposit or remove material therefrom. A single control panel and single gas panel servicing the system further adds to overall efficiency.Type: ApplicationFiled: January 17, 2008Publication date: September 4, 2008Inventors: May Su, Yuh-Jia Su
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Patent number: 7390755Abstract: The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used.Type: GrantFiled: May 1, 2002Date of Patent: June 24, 2008Assignees: Novellus Systems, Inc., STMicroelectronics S.R.L.Inventors: David L. Chen, Yuh-Jia Su, Eddie Ka Ho Chiu, Maria Paola Pozzoli, Senzi Li, Giuseppe Colangelo, Simone Alba, Simona Petroni
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Patent number: 7160813Abstract: A method is disclosed for removing a polysilicon layer from a semiconductor wafer, in which a downstream plasma source is used first to planarize the wafer, removing contours in the polysilicon layer caused by deposition over lithographic features, such as via holes. The planarizing process is followed by exposure to a plasma made by a direct, radio frequency plasma source, which may be in combination with the downstream plasma source, to perform the bulk etching of the polysilicon. The invention can produce planar surface topography after the top layer of the film is removed, in which the residual recess height of the polysilicon plug filling a via hole is less than about about 10 nm.Type: GrantFiled: November 12, 2002Date of Patent: January 9, 2007Assignee: Novellus Systems, Inc.Inventors: Cindy W. Chen, Eddie Chiu, Mavis J. Chaboya, Yuh-Jia Su
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Patent number: 6955177Abstract: The present invention pertains to methods for cleaning semiconductor wafers, more specifically, for removing polymeric and other residues from a wafer using dry plasmas generated with microwave (MW), electromagnetic field (inductively-coupled plasma (ICP)), and radio frequency (RF) energy. First, a wafer is treated by applying a microwave-generated plasma or an inductively-coupled plasma. Second, a radio frequency generated plasma is applied. Each of the microwave-generated plasma and the inductively-coupled plasma is produced from a gas mixture, which includes an oxygen source gas, a fluorine source gas, and a hydrogen source gas. Using such plasmas provides more controllable etch rates than conventional plasmas via control of fluorine concentration in the plasma. Application of a radio frequency generated (preferably oxygen-based) plasma is used for additional photoresist and polymer removal.Type: GrantFiled: December 7, 2001Date of Patent: October 18, 2005Assignee: Novellus Systems, Inc.Inventors: Eddie Chiu, Cindy Wailam Chen, Yuh-Jia Su, Wesley Phillip Graff
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Patent number: 6855225Abstract: A plasma source for use in, for example, semiconductor processing contains a radio-frequency generator, an impedance matching network, and a coil that encloses a tube. The coil is bifilar, i.e., the turns of one are interlaced with the turns of a second winding. The matching network supplies only a single coil in the plasma source, unlike conventional arrangements wherein a single matching network supplies multiple coils in the plasma source.Type: GrantFiled: January 24, 2003Date of Patent: February 15, 2005Assignee: Novellus Systems, Inc.Inventors: Yuh-Jia Su, David Lee Chen, Vincent Bernard Decaux
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Patent number: 6125788Abstract: The invention improves etch uniformity across a silcon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center.Type: GrantFiled: December 12, 1997Date of Patent: October 3, 2000Assignee: Applied Materials, Inc.Inventors: Graham W. Hills, Yuh-Jia Su
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Patent number: 5996218Abstract: A method of forming an electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 is described. The method comprises the steps of forming a base 22 for supporting a substrate 42. An insulator 26 with an electrode 24 therein, is formed on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is formed either (i) on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.Type: GrantFiled: October 4, 1996Date of Patent: December 7, 1999Assignee: Applied Materials Inc.Inventors: Shamouil Shamouilian, John F. Cameron, Chandra Deshpandey, Yuh-Jia Su
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Patent number: 5893757Abstract: A method of etching an article having a substrate, an etchable film and a mask layer having a pattern formed therein includes the step of exposing the article to an etchant gas mixture which includes a halogen-containing gas and an inert gas. An etching profile is formed which is substantially smooth across an interface between the etchable film and the mask layer. The method is particularly useful in producing components of articles such as flat-panel displays.Type: GrantFiled: January 13, 1997Date of Patent: April 13, 1999Assignee: Applied Komatsu Technology, Inc.Inventors: Yuh-Jia Su, Yuen-Kui Wong, Kam S. Law
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Patent number: 5843277Abstract: An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 .ANG./min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C.sub.2 H.sub.5 I) is used alone or in combination with another gas such as O.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.Type: GrantFiled: December 22, 1995Date of Patent: December 1, 1998Assignee: Applied Komatsu Technology, Inc.Inventors: Haruhiro Harry Goto, Yuh-Jia Su, Yuen-Kui Wong, Kam S. Law
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Patent number: 5744049Abstract: The invention improves etch uniformity across a silicon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center.Type: GrantFiled: July 18, 1994Date of Patent: April 28, 1998Assignee: Applied Materials, Inc.Inventors: Graham W. Hills, Yuh-Jia Su
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Patent number: 5685914Abstract: In one aspect, the invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a pedestal focus ring surrounding the periphery of the wafer for reducing the process etch rate near the wafer periphery, and plural openings through the pedestal focus ring which permit passage therethrough of particulate contamination, thereby reducing accumulation of particulate contamination near the wafer periphery. In another aspect, in order to reduce corrosive wear of the chamber walls, a removable gas distribution focus ring shields the side walls of the plasma reactor from reactive gases associated with processing of the semiconductor wafer.Type: GrantFiled: April 5, 1994Date of Patent: November 11, 1997Assignee: Applied Materials, Inc.Inventors: Graham W. Hills, Yuh-Jia Su, Yoshiaki Tanase, Robert E. Ryan
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Patent number: 5607602Abstract: An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.Type: GrantFiled: June 7, 1995Date of Patent: March 4, 1997Assignee: Applied Komatsu Technology, Inc.Inventors: Yuh-Jia Su, Yuen-Kui Wong, Kam S. Law, Haruhiro Goto
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Patent number: 5592358Abstract: An electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 comprises a base 22 having an upper surface adapted to support a substrate 42 thereon. An insulator 26 with an electrode 24 therein, is on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is positioned (i) either on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.Type: GrantFiled: July 18, 1994Date of Patent: January 7, 1997Assignee: Applied Materials, Inc.Inventors: Shamouil Shamouilian, John F. Cameron, Chandra Deshpandey, Yuh-Jia Su
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Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
Patent number: 5589002Abstract: A gas distribution plate for a semiconductor wafer process chamber has a symmetrical pattern of non-circular openings formed therein for the passage of gas therethrough. The smaller axis of the non-circular openings should be at least about 127 .mu.m (5 mils), and preferably at least about 254 .mu.m (10 mils), but less than about 762 .mu.m (30 mils), and preferably less than about 635 .mu.m (25 mils). The larger axis is greater than the smaller axis, preferably at least about 635 .mu.m (25 mils), and most preferably at least about 762 .mu.m (30 mils). At least some of the walls of the non-circular openings are preferably not perpendicular to the plane of the face of the gas distribution plate, but are rather slanted, at an angle of from at least 30.degree. to less than 90.degree., toward the center or axis of the outer face of the circular gas distribution plate which faces the wafer.Type: GrantFiled: March 24, 1994Date of Patent: December 31, 1996Assignee: Applied Materials, Inc.Inventor: Yuh-Jia Su -
Patent number: 5528451Abstract: An erosion resistant electrostatic chuck (20) comprises an electrostatic member (22) supported by a base (24), the base (24) having a peripheral edge (26). A cutaway segment (28) in the peripheral edge (26) of the base holds an insulated electrical connector (30) for electrically connecting the electrostatic member (22) on the chuck (20) to a voltage supply (62)in a process chamber (36). A removable plug (40) is in the cutaway (28), and covers a portion of the insulated electrical connector (30) for protecting the electrical connector from erosion in the process chamber (36). Preferably, the removable plug (40)is substantially L-shaped with the bottom leg of the "L" in the bottom of the cutaway (28), and the upstanding leg of the "L" abutting against the side of the cutaway (28).Type: GrantFiled: November 2, 1994Date of Patent: June 18, 1996Assignee: Applied Materials, IncInventor: Yuh-Jia Su
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Patent number: 5507874Abstract: The present invention provides a method for removing particulate contaminants from an electrostatic chuck pedestal for a semiconductor workpiece by physical removal employing a soft material workpiece or by creating a plasma sheath which suspends the contaminants from the chuck surface and entrains them in the gas stream of the chamber vacuum exhaust system of the chamber. The contaminant removal processes are particularly effective in continuous plasma processes for the treatment of workpieces.Type: GrantFiled: June 3, 1994Date of Patent: April 16, 1996Assignee: Applied Materials, Inc.Inventors: Yuh-Jia Su, Richard Muh
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Patent number: 5410122Abstract: Particles are repelled from the upper face of a wafer in a plasma chamber by inducing positive or negative charges on the substrate without generating a gas plasma above the substrate. The charges are induced in the substrate by bringing a conductive sheet carrying a DC voltage close to the underside of the substrate. The particle repelling effect may be enhanced by inducing alternating positive and negative charges in the substrate. This can be done by switching the polarity of the DC voltage applied to the conductive sheet, or alternatively by moving an actuator to repetitively ground and isolate the substrate from the chamber.Type: GrantFiled: March 15, 1993Date of Patent: April 25, 1995Assignee: Applied Materials, Inc.Inventors: Yuh-Jia Su, Anand Gupta, Graham W. Hills, Joseph Lanucha