Abstract: A light-emitting apparatus comprises a board having a plurality of conductive channels penetrating thereof; a plurality of light emitting units for emitting different color lights, disposed on the board and electrically connected to the plurality of conductive channels; and an opaque layer arranged on the board for preventing the plurality of light emitting units from crosstalk, and comprising a plurality of holes for exposing and separating the plurality of light emitting units in a top view.

Abstract: The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.

Abstract: The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.

Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a carrier having a plurality of first metal contacts; forming a light-emitting structure comprising a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer; bonding the light-emitting structure to the carrier; forming a cap layer on a side of the light-emitting structure opposite to the carrier; and cutting the carrier and the cap layer to form a chip-scale LED unit.

Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

Abstract: The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a first board having a plurality of first metal contacts, providing a substrate, forming a plurality of light-emitting stacks and trenches on the substrate, wherein the light-emitting stacks are apart from each other by the plurality of the trenches, bonding the light-emitting stacks to the first board, forming an encapsulating material commonly on the plurality of the light-emitting stacks, and cutting the first board and the encapsulating material to form a plurality of chip-scale LED units.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

Abstract: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.

Abstract: A lighting apparatus includes a circuit board having a highly reflective top surface; at least one LED chip mounted on the top surface of the circuit board, the at least one LED chip being operable to emit light of a first color. A phosphor film having an arcuate inner surface is configured to maintain a predetermined finite distance from the at least one LED chip, the phosphor film being disposed such that light emitted from the LED chip radiates upon the phosphor film, the inner surface of the phosphor film hooding the top surface of the circuit board so as to form a multi-reflection zone to reduce light absorption by the at least one LED chip and reduce direct light leakage from between the phosphor film and the top surface of the circuit board. The phosphor film containing phosphors that down convert at least a portion of the light of the first color into light of a second color, that when mixed together with the first color produces visible white light.

Abstract: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.

Abstract: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.

Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

Abstract: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.

Abstract: A light emitting diode is disclosed. The light emitting diode includes a substrate, a thermal spreading layer disposed on the bottom of the substrate, a soldering layer disposed on the bottom of the thermal spreading layer, a barrier layer disposed between the thermal spreading layer and the soldering layer, and a light emitting layer disposed on top of the substrate.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer.

Abstract: A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer.