Patents by Inventor Yuh-Shan SU

Yuh-Shan SU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE PACKAGE INCLUDING STRESS BUFFERING LAYER
    Publication number: 20230387092
    Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
    Type: Application
    Filed: August 8, 2023
    Publication date: November 30, 2023
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chien-Mei HUANG, Shih-Yu WANG, I-Ting LIN, Wen Hung HUANG, Yuh-Shan SU, Chih-Cheng LEE, Hsing Kuo TIEN
  • Semiconductor device package including stress buffering layer
    Patent number: 11721678
    Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: August 8, 2023
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chien-Mei Huang, Shih-Yu Wang, I-Ting Lin, Wen Hung Huang, Yuh-Shan Su, Chih-Cheng Lee, Hsing Kuo Tien
  • Semiconductor device package having an antenna formed over a foaming agent filled cavity in a support layer
    Patent number: 11430750
    Abstract: A semiconductor device package includes a first substrate, an antenna, a support layer, a dielectric layer and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The antenna element is disposed on the second surface of the first substrate. The support layer is disposed on the first surface of the first substrate and at the periphery of the first surface of the first substrate. The support layer has a first surface facing away from the first substrate. The dielectric layer is disposed on the first surface of the support layer and spaced apart from the first substrate. The dielectric layer is chemically bonded to the support layer. The second substrate is disposed on a first surface of the dielectric layer facing away from the support layer.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: August 30, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Wen Hung Huang, Min Lung Huang, Yuh-Shan Su
  • SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20210280565
    Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 9, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chien-Mei HUANG, Shih-Yu WANG, I-Ting LIN, Wen Hung HUANG, Yuh-Shan SU, Chih-Cheng LEE, Hsing Kuo TIEN
  • Semiconductor device package with stress buffering layer and method for manufacturing the same
    Patent number: 11018120
    Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: May 25, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Chien-Mei Huang, Shih-Yu Wang, I-Ting Lin, Wen Hung Huang, Yuh-Shan Su, Chih-Cheng Lee, Hsing Kuo Tien
  • SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20200388600
    Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.
    Type: Application
    Filed: June 6, 2019
    Publication date: December 10, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chien-Mei HUANG, Shih-Yu WANG, I-Ting LIN, Wen Hung HUANG, Yuh-Shan SU, Chih-Cheng LEE, Hsing Kuo TIEN
  • SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200381375
    Abstract: A semiconductor device package includes a first substrate, an antenna, a support layer, a dielectric layer and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The antenna element is disposed on the second surface of the first substrate. The support layer is disposed on the first surface of the first substrate and at the periphery of the first surface of the first substrate. The support layer has a first surface facing away from the first substrate. The dielectric layer is disposed on the first surface of the support layer and spaced apart from the first substrate. The dielectric layer is chemically bonded to the support layer. The second substrate is disposed on a first surface of the dielectric layer facing away from the support layer.
    Type: Application
    Filed: May 29, 2019
    Publication date: December 3, 2020
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Wen Hung HUANG, Min Lung HUANG, Yuh-Shan SU