Patents by Inventor Yuh-Ta FAN

Yuh-Ta FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 9812570
    Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.
    Type: Grant
    Filed: June 30, 2015
    Date of Patent: November 7, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Fen Chen, Chui-Ya Peng, Ching Yu, Pin-Hen Lin, Yen Chuang, Yuh-Ta Fan
  • Semiconductor structure with interfacial layer and method for manufacturing the same
    Patent number: 9595593
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and an interfacial layer formed over the substrate. The semiconductor structure further includes a gate structure formed over the interfacial layer. In addition, the interfacial layer is made of metal germanium oxide, metal silicon oxide, or metal germanium silicon oxide and is in direct contact with a top surface of the substrate.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: March 14, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Fan Lee, Chee-Wee Liu, Chin-Kun Wang, Yuh-Ta Fan, Chih-Hsiung Huang, Tzu-Yao Lin
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20170005196
    Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.
    Type: Application
    Filed: June 30, 2015
    Publication date: January 5, 2017
    Inventors: Chih-Fen CHEN, Chui-Ya PENG, Ching YU, Pin-Hen LIN, Yen CHUANG, Yuh-Ta FAN
  • SEMICONDUCTOR STRUCTURE WITH INTERFACIAL LAYER AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20160380069
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and an interfacial layer formed over the substrate. The semiconductor structure further includes a gate structure formed over the interfacial layer. In addition, the interfacial layer is made of metal germanium oxide, metal silicon oxide, or metal germanium silicon oxide and is in direct contact with a top surface of the substrate.
    Type: Application
    Filed: June 29, 2015
    Publication date: December 29, 2016
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Wei-Fan LEE, Chee-Wee LIU, Chin-Kun WANG, Yuh-Ta FAN, Chih-Hsiung HUANG, Tzu-Yao LIN