Abstract: A pixel structure, a method for forming the pixel structure, and a display screen are provided. The method includes: providing a substrate for forming an OLED device, the substrate having a first pixel area, a second pixel area, and a third pixel area; and forming a compensation layer on the substrate, the compensation layer having different thicknesses in the first pixel area, the second pixel area, and the third pixel area. In the present disclosure, the compensation layer is formed on the substrate, and the compensation layer has different thicknesses respectively in the first pixel area, the second pixel area and the third pixel area, so that the cavity of the first pixel area, the cavity of the second pixel area, and the cavity of the third pixel area can be individually controlled.

Abstract: A shadow mask used for OLED evaporation and a manufacturing method therefor, and an OLED panel manufacturing method. The shadow mask used for OLED evaporation includes: a semiconductor substrate including a front surface and a back surface opposite thereto, a recess penetrating the front surface and the back surface being provided in the semiconductor substrate; and a grid film layer provided on the front surface of the semiconductor substrate. A number of openings arranged in an array are provided in the grid film layer. Each of the openings has an upper portion and a lower portion. A width of the upper portion is greater than a width of the lower portion. The recess exposes the number of openings in the grid film layer and the grid film layer between adjacent openings.

Abstract: A pixel structure, a method for forming the pixel structure, and a display screen are provided. The method includes: providing a substrate for forming an OLED device, the substrate having a first pixel area, a second pixel area, and a third pixel area; and forming a compensation layer on the substrate, the compensation layer having different thicknesses in the first pixel area, the second pixel area, and the third pixel area. In the present disclosure, the compensation layer is formed on the substrate, and the compensation layer has different thicknesses respectively in the first pixel area, the second pixel area and the third pixel area, so that the cavity of the first pixel area, the cavity of the second pixel area, and the cavity of the third pixel area can be individually controlled.

Abstract: A shadow mask used for OLED evaporation and a manufacturing method therefor, and an OLED panel manufacturing method. The shadow mask used for OLED evaporation includes: a semiconductor substrate including a front surface and a back surface opposite thereto, a recess penetrating the front surface and the back surface being provided in the semiconductor substrate; and a grid film layer provided on the front surface of the semiconductor substrate. A number of openings arranged in an array are provided in the grid film layer. Each of the openings has an upper portion and a lower portion. A width of the upper portion is greater than a width of the lower portion. The recess exposes the number of openings in the grid film layer and the grid film layer between adjacent openings.

Abstract: A flexible display device includes at least one curable adhesive layer having a hollow structure. The curable adhesive layer with the hollow structure can alleviate a stress inside the display device. The method of manufacturing a display device includes preparing a flexible display panel for displaying an image; forming a first curable adhesive layer having a hollow structure by coating curable adhesive on the flexible display panel; preparing a first flexible panel, disposing the first flexible panel on the first curable adhesive layer and curing the first curable adhesive layer. With this method, a stress inside the display device can be alleviated and a display effect can be improved.

Abstract: A method for forming a split gate device includes forming a first sidewall of a first conductive gate layer, wherein the semiconductor layer includes a tunnel region laterally adjacent the first sidewall, forming a dielectric layer along the first sidewall to provide for increased thickness of a gap spacer, forming a charge storage layer over a portion of a top surface of the first conductive layer and over the tunnel region, and forming a second conductive gate layer over the charge storage layer.