Abstract: The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate band solar cell excellent in quantum yield of two-step photon absorption, a photoelectric conversion element, and an intermediate band solar cell having the light absorption layer, the light absorption layer of the present invention containing a perovskite compound and a quantum dot having an upper end of a valence band at an energy level more negative than an upper end of a valence band of the perovskite compound, and having an intermediate band.

Abstract: The present invention provides a light absorption layer for forming a photoelectric conversion element and a solar cell excellent in photoelectric conversion efficiency, a photoelectric conversion element and a solar cell having the light absorption layer, and a method for manufacturing a light absorption layer having few voids. The light absorption layer of the present invention contains a perovskite compound and a quantum dot containing an aliphatic amino acid.

Abstract: There is provides a photoelectric conversion device material which can be used as an electrode buffer material for a solar cell or the like and can improve durability while maintaining the interaction with an electrode and mobility; a photoelectric conversion device using the photoelectric conversion device material; and a solar cell using the photoelectric conversion device. A photoelectric conversion device containing a buffer layer and an active layer, wherein the buffer layer contains a compound represented by the following general formula (I), the active layer contains an n-type semiconductor, and the n-type semiconductor is a compound having a solubility in toluene of 0.5% by weight or more at 25° C. and having an electron mobility of 1.0×10?6 cm2/Vs or more.