Patents by Inventor Yuhei Sato

Yuhei Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210320212
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
  • Patent number: 11049974
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
  • Publication number: 20210098629
    Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Inventors: Akihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
  • Patent number: 10944014
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: March 9, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
  • Publication number: 20200227566
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 16, 2020
    Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
  • Publication number: 20200203183
    Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
    Type: Application
    Filed: March 2, 2020
    Publication date: June 25, 2020
    Inventors: Shunpei YAMAZAKI, Yuhei SATO, Keiji SATO, Tetsunori MARUYAMA, Junichi KOEZUKA
  • Patent number: 10672913
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: June 2, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
  • Patent number: 10615052
    Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: April 7, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yuhei Sato, Keiji Sato, Tetsunori Maruyama, Junichi Koezuka
  • Publication number: 20200013893
    Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Inventors: Akihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
  • Publication number: 20190341495
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Application
    Filed: July 17, 2019
    Publication date: November 7, 2019
    Inventors: Shunpei YAMAZAKI, Akihisa SHIMOMURA, Yuhei SATO, Yasumasa YAMANE, Yoshitaka YAMAMOTO, Hideomi SUZAWA, Tetsuhiro TANAKA, Yutaka OKAZAKI, Naoki OKUNO, Takahisa ISHIYAMA
  • Patent number: 10439068
    Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: October 8, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akihisa Shimomura, Junichi Koezuka, Kenichi Okazaki, Yasumasa Yamane, Yuhei Sato, Shunpei Yamazaki
  • Patent number: 10388520
    Abstract: A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: August 20, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshinori Yamada, Tetsunori Maruyama
  • Patent number: 10374097
    Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: August 6, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
  • Patent number: 10290745
    Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: May 14, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Akihisa Shimomura, Yasumasa Yamane, Ryo Tokumaru, Yuhei Sato, Kazuhiro Tsutsui
  • Patent number: 10249651
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: April 2, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Naoto Yamade, Yuhei Sato, Yutaka Okazaki, Shunpei Yamazaki
  • Publication number: 20190035937
    Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
    Type: Application
    Filed: July 2, 2018
    Publication date: January 31, 2019
    Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
  • Patent number: 10103271
    Abstract: A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.
    Type: Grant
    Filed: January 24, 2018
    Date of Patent: October 16, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideomi Suzawa, Tetsuhiro Tanaka, Yuhei Sato, Sachiaki Tezuka, Shunpei Yamazaki
  • Publication number: 20180277392
    Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
    Type: Application
    Filed: May 29, 2018
    Publication date: September 27, 2018
    Inventors: Shunpei YAMAZAKI, Yuhei SATO, Keiji SATO, Tetsunori MARUYAMA, Junichi KOEZUKA
  • Publication number: 20180261633
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Application
    Filed: March 5, 2018
    Publication date: September 13, 2018
    Inventors: Junichi KOEZUKA, Naoto YAMADE, Yuhei SATO, Yutaka OKAZAKI, Shunpei YAMAZAKI
  • Patent number: 10050132
    Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: August 14, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yasumasa Yamane, Yuhei Sato, Tetsuhiro Tanaka, Masashi Tsubuku, Toshihiko Takeuchi, Ryo Tokumaru, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Toshiya Endo