Patents by Inventor Yuhei Sato
Yuhei Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230335646Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.Type: ApplicationFiled: June 20, 2023Publication date: October 19, 2023Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
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Patent number: 11705522Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.Type: GrantFiled: June 25, 2021Date of Patent: July 18, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
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Publication number: 20230104803Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.Type: ApplicationFiled: November 30, 2022Publication date: April 6, 2023Inventors: Akihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
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Patent number: 11532755Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.Type: GrantFiled: December 14, 2020Date of Patent: December 20, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Junichi Koezuka, Kenichi Okazaki, Yasumasa Yamane, Yuhei Sato, Shunpei Yamazaki
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Patent number: 11387116Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.Type: GrantFiled: March 2, 2020Date of Patent: July 12, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yuhei Sato, Keiji Sato, Tetsunori Maruyama, Junichi Koezuka
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Patent number: 11380799Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.Type: GrantFiled: September 16, 2019Date of Patent: July 5, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Junichi Koezuka, Kenichi Okazaki, Yasumasa Yamane, Yuhei Sato, Shunpei Yamazaki
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Publication number: 20210320212Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.Type: ApplicationFiled: June 25, 2021Publication date: October 14, 2021Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
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Patent number: 11049974Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.Type: GrantFiled: March 30, 2020Date of Patent: June 29, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
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Publication number: 20210098629Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.Type: ApplicationFiled: December 14, 2020Publication date: April 1, 2021Inventors: Akihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
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Patent number: 10944014Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.Type: GrantFiled: July 17, 2019Date of Patent: March 9, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
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Publication number: 20200227566Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.Type: ApplicationFiled: March 30, 2020Publication date: July 16, 2020Inventors: Shunpei YAMAZAKI, Hideomi SUZAWA, Tetsuhiro TANAKA, Hirokazu WATANABE, Yuhei SATO, Yasumasa YAMANE, Daisuke MATSUBAYASHI
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Publication number: 20200203183Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.Type: ApplicationFiled: March 2, 2020Publication date: June 25, 2020Inventors: Shunpei YAMAZAKI, Yuhei SATO, Keiji SATO, Tetsunori MARUYAMA, Junichi KOEZUKA
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Patent number: 10672913Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.Type: GrantFiled: July 2, 2018Date of Patent: June 2, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hideomi Suzawa, Tetsuhiro Tanaka, Hirokazu Watanabe, Yuhei Sato, Yasumasa Yamane, Daisuke Matsubayashi
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Patent number: 10615052Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.Type: GrantFiled: May 29, 2018Date of Patent: April 7, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yuhei Sato, Keiji Sato, Tetsunori Maruyama, Junichi Koezuka
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Publication number: 20200013893Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: Akihisa SHIMOMURA, Junichi KOEZUKA, Kenichi OKAZAKI, Yasumasa YAMANE, Yuhei SATO, Shunpei YAMAZAKI
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Publication number: 20190341495Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.Type: ApplicationFiled: July 17, 2019Publication date: November 7, 2019Inventors: Shunpei YAMAZAKI, Akihisa SHIMOMURA, Yuhei SATO, Yasumasa YAMANE, Yoshitaka YAMAMOTO, Hideomi SUZAWA, Tetsuhiro TANAKA, Yutaka OKAZAKI, Naoki OKUNO, Takahisa ISHIYAMA
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Patent number: 10439068Abstract: To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.Type: GrantFiled: January 29, 2016Date of Patent: October 8, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Junichi Koezuka, Kenichi Okazaki, Yasumasa Yamane, Yuhei Sato, Shunpei Yamazaki
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Patent number: 10388520Abstract: A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.Type: GrantFiled: December 23, 2014Date of Patent: August 20, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshinori Yamada, Tetsunori Maruyama
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Patent number: 10374097Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.Type: GrantFiled: January 9, 2018Date of Patent: August 6, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yuhei Sato, Yasumasa Yamane, Yoshitaka Yamamoto, Hideomi Suzawa, Tetsuhiro Tanaka, Yutaka Okazaki, Naoki Okuno, Takahisa Ishiyama
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Patent number: 10290745Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.Type: GrantFiled: June 26, 2017Date of Patent: May 14, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Akihisa Shimomura, Yasumasa Yamane, Ryo Tokumaru, Yuhei Sato, Kazuhiro Tsutsui