Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A direct drive system for providing RF power to a component of a substrate processing system includes a direct drive circuit including a switch and configured to supply RF power to the component. A switch protection module is configured to monitor a load current and a load voltage in a processing chamber, calculate load resistance based on the load current and the load voltage, compare the load resistance to a first predetermined load resistance, and adjust at least one of an RF power limit and an RF current limit of the direct drive circuit based on the comparison.

Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

Abstract: A method for operating a plasma chamber to increase ion energy and decrease angular spread of ions during an etch operation is described. Method includes placing a substrate on an electrostatic chuck within the plasma chamber, wherein the electrostatic chuck is electrically coupled to a node. Method further includes forming a plasma in the plasma chamber, where the plasma produces a sheath with a first sheath voltage. The method further includes increasing the first sheath voltage to a second sheath voltage by applying a non-sinusoidal voltage at the electrostatic chuck and by applying a sinusoidal voltage at the electrostatic chuck, where a sum of the non-sinusoidal voltage and the sinusoidal voltage creates a voltage response on the electrostatic chuck that effectuates a change in a spread in ion energy at the wafer.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

Abstract: A radiofrequency calibration system for a direct-drive radiofrequency power supply includes a reference box that includes a reference circuit for converting a non-reference input impedance to a reference output impedance. The reference box has an input connector electrically connected to a radiofrequency output coupling of the direct-drive radiofrequency power supply. A radiofrequency power meter has a radiofrequency power input electrically connected to an output connector of the reference box. The radiofrequency power meter has an input impedance and an output impedance that substantially match the reference output impedance of the reference box. A cable has a first end electrically connected to a radiofrequency power output of the radiofrequency power meter and a second end connected to a test load that has an impedance that substantially matches the reference output impedance of the reference box. A controller is connected in data communication with a data interface of the radiofrequency power meter.

Abstract: A junction system for a direct-drive radiofrequency power supply includes a first terminal connected to a radiofrequency signal supply pin that is connected to an output of a direct-drive radiofrequency signal generator. The junction system also includes a second terminal connected to a coil of a plasma processing chamber. The junction system includes a reactive circuit connected between the first terminal and the second terminal. The reactive circuit is configured to transform a shaped-amplified square waveform signal into a shaped-sinusoidal signal in route from the first terminal to the second terminal. The reactive circuit includes a variable capacitor having a capacitance set so that a peak amount of radiofrequency power is transmitted from the direct-drive radiofrequency signal generator through the reactive circuit to the coil.

Abstract: A plasma processing chamber has an upper window with a coil disposed above the upper window. A coil connection enclosure is disposed above the coil. A metrology enclosure is disposed above the coil connection enclosure. A spectral reflectometry system is disposed within the metrology enclosure. The spectral reflectometry system includes an optical collimator positioned to direct a beam of light through an opening in the metrology enclosure, an opening in the coil connection enclosure, and the upper window into the plasma processing chamber. The optical collimator is also configured to receive reflected light from within the plasma processing chamber, where the reflected light passes through the upper window and through the opening in the coil connection enclosure and through the opening in the metrology enclosure. A tip angle and a tilt angle of the optical collimator are remotely adjusted to optimize an orientation of the optical collimator.

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

Abstract: A direct drive system for providing RF power to a component of a substrate processing system includes a direct drive circuit including a switch and configured to supply RF power to the component. A switch protection module is configured to monitor a load current and a load voltage in a processing chamber, calculate load resistance based on the load current and the load voltage, compare the load resistance to a first predetermined load resistance, and adjust at least one of an RF power limit and an RF current limit of the direct drive circuit based on the comparison.

Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Abstract: A method for pulsing is described. The method includes generating a first radio frequency (RF) signal, and pulsing a parameter of the first RF signal between a first parameter level and a second parameter level at a pulsing frequency during a cycle of a digital pulsed signal. The method further includes generating a second RF signal, and pulsing a parameter of the second RF signal at a higher pulsing frequency than the pulsing frequency of the parameter of the first RF signal during the cycle. During the cycle, a start time of pulsing the parameter of the first RF signal is synchronized with a start time of pulsing the parameter of the second RF signal and an end time of pulsing the parameter of the first RF signal is synchronized with an end time of pulsing the parameter of the second RF signal.

Abstract: A lid assembly for a processing chamber in a substrate processing system includes a dielectric window. The dielectric window includes an upper portion having flat upper and lower surfaces. The lower surface is a plasma-facing surface of the dielectric window. A lower portion of the dielectric window is cylindrical and extends downward from the lower surface and an outer diameter of the lower portion at least one of is aligned with a gap between inner and outer coils arranged above the dielectric window and overlaps one of the inner and outer coils.

Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.

Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.