Abstract: An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

Abstract: An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.