Abstract: An information processing apparatus according to an embodiment includes: a common data model management unit that manages information indicating a common data model corresponding to a plurality of modules in common; a unique data model management unit that manages information indicating a unique data model corresponding to at least one of the modules; and a common management unit that manages a version of a module corresponding to the common data model managed by the common data model management unit, a version of a module corresponding to the unique data model managed by the unique data model management unit, and a version of a module corresponding to a newly installed data model, and verifies compatibility of the versions.

Abstract: An information processing apparatus according to an embodiment includes: a creation processing unit which creates information indicating a message structure based on which a length of a memory area to be secured in a stack area of a virtual address space assigned for a serialization process is determined during compilation; a serialization processing unit which performs a serialization process to serialize data from a device and write the serialized data into a data storage device using the information created by the creation processing unit; and a deserialization processing unit which reads the serialized data written into the data storage device and deserializes the read data using the information created by the creation processing unit.

Abstract: A projection screen control method of one embodiment of the present disclosure includes irradiating a display member with first control light, and irradiating the display member with second control light, in which the irradiating the display member with the first control light and the irradiating the display member with the second control light are performed in sequence. The display member has a visible light transmittance or a visible light reflectance that varies depending on light, and contains a photochromic material, and the first control light and the second control light have different light intensities.

Abstract: A dimming device 700 includes a first substrate 711 and a second substrate 712, a first electrode 731 formed on top of the first substrate 711, a dimming layer 720 formed on top of the first electrode 731, a second electrode 732 formed on top of at least the dimming layer 720, a moisture-retaining member 741 that covers at least the second electrode 732 and faces the second substrate 712, and sealing members 733, 734, 735, and 736 provided in an edge portion of the first substrate 711, and a moisture-retaining member extending portion 743 that extends from the moisture-retaining member 741 is disposed between the sealing member and the second substrate 712, and a thickness of the moisture-retaining member extending portion 743 is thinner than a thickness of the moisture-retaining member 742 in a central portion of the dimming device 700.

Abstract: A projection screen control method of one embodiment of the present disclosure includes irradiating a display member with first control light, and irradiating the display member with second control light, in which the irradiating the display member with the first control light and the irradiating the display member with the second control light are performed in sequence. The display member has a visible light transmittance or a visible light reflectance that varies depending on light, and contains a photochromic material, and the first control light and the second control light have different light intensities.

Abstract: A dimming device 700 includes a first substrate 711 and a second substrate 712, a first electrode 731 formed on top of the first substrate 711, a dimming layer 720 formed on top of the first electrode 731, a second electrode 732 formed on top of at least the dimming layer 720, a moisture-retaining member 741 that covers at least the second electrode 732 and faces the second substrate 712, and sealing members 733, 734, 735, and 736 provided in an edge portion of the first substrate 711, and a moisture-retaining member extending portion 743 that extends from the moisture-retaining member 741 is disposed between the sealing member and the second substrate 712, and a thickness of the moisture-retaining member extending portion 743 is thinner than a thickness of the moisture-retaining member 742 in a central portion of the dimming device 700.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.

Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.

Abstract: There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.

Abstract: There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.

Abstract: A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.

Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.

Abstract: There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.

Abstract: A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.