Patents by Inventor Yui Ishii

Yui Ishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200192916
    Abstract: A data processing system according to one embodiment includes first and second data storage devices (62a, 62b) having a storage medium capable of permanently storing data; a data holding device (61) having a storage medium capable of storing the data at a higher speed than the first and second data storage devices (62a, 62b); and a controller (63) that determines the type of data to be processed, and, in the case where the data to be processed is structured data, stores the data to be processed in the data holding device (61), then, collectively, in the first data storage device (62a), and, in the case where the data to be processed is binary data, stores the data to be processed in the data holding device (61) and in the second data storage device (62b).
    Type: Application
    Filed: December 21, 2017
    Publication date: June 18, 2020
    Applicant: Nippon Telegraph and Telephone Corporation
    Inventors: Keiichiro KASHIWAGI, Hisaharu ISHII, Yui YOSHIDA
  • Publication number: 20200192870
    Abstract: In a first aspect of the present invention, a data processing device includes a first recording part capable of storing data permanently, a second recording part having a reading speed faster than a reading speed of the first recording part, a processing part that stores data generated by a data generation source in the first recording part, and if the data generated by the data generation source matches a retrieval condition registered in advance, further stores the data generated by the data generation source in the second recording part, and a retrieving part that searches the second recording part preferentially over the first recording part in response to a data processing request from an application.
    Type: Application
    Filed: October 16, 2017
    Publication date: June 18, 2020
    Applicant: Nippon Telegraph and Telephone Corporation
    Inventors: Keiichiro KASHIWAGI, Hisaharu ISHII, Yui YOSHIDA
  • Publication number: 20200170196
    Abstract: Objects of the present invention are to provide a film for an agricultural greenhouse that can maintain a CO2 concentration necessary for the photosynthesis of plants even when ventilation is not performed and to provide an agricultural greenhouse using the film. The film for an agricultural greenhouse of the present invention is a cellulose film which contains a cellulose acylate resin and has an equilibrium moisture content of 4% to 8% at a temperature of 25° C., a relative humidity of 80% and a thickness of 60 to 200 ?m.
    Type: Application
    Filed: February 7, 2020
    Publication date: June 4, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Shogo KATANO, Yui OMI, Kimito WASHIYA, Akihiro IKEYAMA, Eiji ISHII
  • Patent number: 10595472
    Abstract: Objects of the present invention are to provide a film for an agricultural greenhouse that can maintain a CO2 concentration necessary for the photosynthesis of plants even when ventilation is not performed and to provide an agricultural greenhouse using the film. The film for an agricultural greenhouse of the present invention is a cellulose film which contains a cellulose acylate resin and has an equilibrium moisture content of 4% to 8% at a temperature of 25° C., a relative humidity of 80% and a thickness of 60 to 200 ?m.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: March 24, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Shogo Katano, Yui Omi, Kimito Washiya, Akihiro Ikeyama, Eiji Ishii
  • Publication number: 20190317847
    Abstract: An RPC conversion processing system (10) that performs relaying between a first application (70) and second application (80) of different protocols. The RPC conversion processing system includes a first interface provider (20) connected to the first application and configured to provide a first interface for the first application, an RPC conversion relay function section (40), and a second interface provider (30) connected to the second application and configured to provide a second interface for the second application. The first interface provider receives a request for processing an RPC from the first application. The RPC conversion relay function section converts the RPC into an RPC of the second application and outputs the RPC of the second application to the second interface provider, thereby relaying an RPC between the first application and the second application.
    Type: Application
    Filed: December 13, 2017
    Publication date: October 17, 2019
    Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Tomoyuki FUJINO, Yuji OSHIMA, Keiichiro KASHIWAGI, Hisaharu ISHII, Yui YOSHIDA
  • Publication number: 20190317833
    Abstract: A data processing system (10) connected to a plurality of first applications (80) and a plurality of second applications (90) includes a setting information generation function section (20), wherein the setting information generation function section includes a first interface generator (22) configured to generate a first interface for the first applications, a second interface generator (24) configured to generate a second interface for the second applications, and a storage (30) to store common data structure generation source information which is common information based on which the first and second interfaces are generated, and when the common data structure generation source information is updated, the first interface generator and the second interface generator automatically generate the first interface and the second interface, respectively, based on the updated common data structure generation source information.
    Type: Application
    Filed: December 13, 2017
    Publication date: October 17, 2019
    Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Keiichiro KASHIWAGI, Hisaharu ISHII, Kenji UMAKOSHI, Ryohei BANNO, Yui YOSHIDA
  • Patent number: 10134812
    Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: November 20, 2018
    Assignee: SONY CORPORATION
    Inventors: Mao Katsuhara, Hideki Ono, Shinichi Ushikura, Yui Ishii
  • Patent number: 9634271
    Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: April 25, 2017
    Assignee: SONY CORPORATION
    Inventors: Yui Ishii, Hideki Ono
  • Publication number: 20170040384
    Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.
    Type: Application
    Filed: October 20, 2016
    Publication date: February 9, 2017
    Inventors: MAO KATSUHARA, HIDEKI ONO, SHINICHI USHIKURA, YUI ISHII
  • Patent number: 9508806
    Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.
    Type: Grant
    Filed: September 3, 2013
    Date of Patent: November 29, 2016
    Assignee: SONY CORPORATION
    Inventors: Mao Katsuhara, Hideki Ono, Shinichi Ushikura, Yui Ishii
  • Publication number: 20160181556
    Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.
    Type: Application
    Filed: February 26, 2016
    Publication date: June 23, 2016
    Inventors: Yui ISHII, Hideki ONO
  • Patent number: 9293719
    Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: March 22, 2016
    Assignee: SONY CORPORATION
    Inventors: Yui Ishii, Hideki Ono
  • Patent number: 9246008
    Abstract: There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: January 26, 2016
    Assignee: SONY CORPORATION
    Inventors: Toshio Fukuda, Yui Ishii
  • Publication number: 20150249137
    Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.
    Type: Application
    Filed: September 3, 2013
    Publication date: September 3, 2015
    Inventors: Mao Katsuhara, Hideki Ono, Shinichi Ushikura, Yui Ishii
  • Publication number: 20140361305
    Abstract: There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.
    Type: Application
    Filed: August 21, 2014
    Publication date: December 11, 2014
    Inventors: Toshio Fukuda, Yui Ishii
  • Patent number: 8853014
    Abstract: There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: October 7, 2014
    Assignee: Sony Corporation
    Inventors: Toshio Fukuda, Yui Ishii
  • Patent number: 8735998
    Abstract: A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: May 27, 2014
    Assignee: Sony Corporation
    Inventors: Yui Ishii, Toshio Fukuda
  • Publication number: 20140054568
    Abstract: A semiconductor device includes: a gate electrode; an organic semiconductor film forming a channel; and a pair of source-drain electrodes formed on the organic semiconductor film, the pair of source-drain electrodes each including a connection layer, a buffer layer, and a wiring layer that are laminated in order.
    Type: Application
    Filed: August 6, 2013
    Publication date: February 27, 2014
    Applicant: Sony Corporation
    Inventors: Yui Ishii, Hideki Ono
  • Publication number: 20130143357
    Abstract: There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.
    Type: Application
    Filed: August 10, 2011
    Publication date: June 6, 2013
    Applicant: SONY CORPORATION
    Inventors: Osamu Goto, Daisuke Hobara, Akihiro Nomoto, Yosuke Murakami, Shigetaka Tomiya, Norihito Kobayashi, Keisuke Shimizu, Mao Katsuhara, Takahiro Ohe, Noriyuki Kawashima, Yuka Takahashi, Toshio Fukuda, Yui Ishii
  • Publication number: 20130048992
    Abstract: A transistor includes: a control electrode; an active layer facing the control electrode; a first electrode and a second electrode electrically connected to the active layer; and an insulating layer provided between the control electrode and the active layer, the insulating layer containing diallyl isophthalate resin.
    Type: Application
    Filed: August 14, 2012
    Publication date: February 28, 2013
    Applicant: Sony Corporation
    Inventors: Yui Ishii, Toshio Fukuda