Abstract: In order to provide a novel oriented apatite-type oxide ion conductor which can achieve an increase in area through suppression of crack generation and preferably can be manufactured more inexpensively by an uncomplicated process, an oriented apatite-type oxide ion conductor composed of a composite oxide represented by A9.33+x[T6?yMy]O26.00+z A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba. T in the formula is an element including Si, Ge, or both of them. M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo.

Abstract: In order to provide a novel oriented apatite-type oxide ion conductor which can achieve an increase in area through suppression of crack generation and preferably can be manufactured more inexpensively by an uncomplicated process, an oriented apatite-type oxide ion conductor composed of a composite oxide represented by A9.33+x[T6?yMy]O26.00+z A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba. T in the formula is an element including Si, Ge, or both of them. M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo.

Abstract: The present invention provides a semiconductor powder composed of Cu-M-Sn—S in a single phase wherein M is at least one selected from the group consisting of Zn, Co, Ni, Fe and Mn, the powder being obtained by wet synthesis, and a method for producing this semiconductor powder. According to the present invention, it is possible to provide, in a simple way, a high-grade semiconductor powder composed of a single-phase Cu-M-Sn—S such as CZTS.

Abstract: A particulate combustion catalyst which includes a carrier containing a cerium-zirconium double oxide having a cerium oxide content of 5 to 50 mass %, or a carrier containing a cerium-zirconium-based double oxide containing an oxide of at least one metal selected from Nd, La, Fe, Y, Pr, Ba, Ca, Mg, Sn, and Sr in an amount of 1 to 35 mass %, and having a cerium oxide content of 5 to 50 mass %; and at least one metal selected from Ag, Ru, and K, or an oxide thereof supported on the carrier, and at least one metal selected from among Pt, Pd, and Rh supported on the carrier in an amount of 0.01 to 2 mass %. A particulate filter and an exhaust gas cleanup system having the catalyst are also disclosed. Employment of the particulate combustion catalyst realizes removal of soot through oxidation at low temperature without employment of an expensive noble metal.

Abstract: A co-catalyst for purifying an exhaust gas which can be used for a loner period of time as an actual catalyst by using the cerium oxide in the conventional co-catalyst for purifying the exhaust gas as a cerium-containing complex oxide for elevating the resistance to heat and suppressing the performance reduction due to thermal deterioration and by making a specific surface area and an oxygen storage capacity over specified values. A co-catalyst for purifying an exhaust gas of the present invention includes a composite oxide including (a) cerium; and (b) at least one element selected from the group consisting of zirconium, yttrium, strontium, barium and a rare-earth element supported on a particulate aluminum oxide support; a specific surface area of the co-catalyst after sintering being not less than 40 m2/g; an oxygen storage capacity at 400° C. being not less than 10 &mgr;mols/g and an oxygen storage capacity at 700° C. being not less than 100 &mgr;mols/g.

Abstract: A process for producing a thermoelectric material comprising mixing at least two of bismuth, tellurium, selenium, and antimony and, if desired, a dopant, melting the mixture, grinding the resulting alloy ingot, forming the powder, and sintering the green body under normal pressure, or hot pressing the powder, wherein the grinding and the normal sintering or hot pressing are carried out in the presence of a solvent represented by CnH2n+1OH or CnH2n+2CO (wherein n is 1, 2 or 3).

Abstract: A process for producing a thermoelectric material comprising mixing at least two of bismuth, tellurium, selenium, and antimony and, if desired, a dopant, melting the mixture, grinding the resulting alloy ingot, forming the powder, and sintering the green body under normal pressure, or hot pressing the powder, wherein the grinding and the normal sintering or hot pressing are carried out in the presence of a solvent represented by CnH2n+1OH or CnH2n+2CO (wherein n is 1, 2 or 3).