Abstract: The present invention addresses the problem of providing a flight vehicle that enables safe and easy test for continuity in structures. The flight vehicle 100 according to the present invention comprises: a flight vehicle body 110; a conductive member 120 for contact with the conductor of a structure; and a movement mechanism 130 capable of moving the conductive member 120 between distal and proximal positions with respect to the flight vehicle body 100. The movement mechanism 130 may be also provided with a support rod 130 that supports the conductive member 120, and a rod movement means 130b capable of moving the support rod 130 in the distal direction.

Abstract: Provided is a head-up display in which the characteristics for dissipating heat generated by a light source are excellent. This head-up display emits display light of a display image projected by a display device to a transmission/reflection part of the vehicle to allow a viewer to see a virtual image of the display image. The display device comprises: a substrate that has a quadrilateral heat dissipation plate having corners; and a quadrilateral light source that is provided on the heat dissipation plate, and that has corners. The heat dissipation plate is disposed such that the corners of the heat dissipation plate 61 are rotated relative to the corners of the light source.

Abstract: Provided is a head-up display in which the characteristics for dissipating heat generated by a light source are excellent. This head-up display emits display light of a display image projected by a display device to a transmission/reflection part of the vehicle to allow a viewer to see a virtual image of the display image. The display device comprises: a substrate that has a quadrilateral heat dissipation plate having corners; and a quadrilateral light source that is provided on the heat dissipation plate, and that has corners. The heat dissipation plate is disposed such that the corners of the heat dissipation plate 61 are rotated relative to the corners of the light source.

Abstract: A display device includes: an illumination unit having a light source unit capable of emitting light; an illumination control unit controlling the illumination unit; a display element capable of forming an image with illumination light from the illumination unit; a display control unit controlling the display element; a control unit controlling the display control unit and the illumination control unit based on a video signal; and a first circuit board on which the display element and the display control unit are mounted. When the display element and the display control unit are mounted on the surface of the first circuit board, a first signal for controlling pixels of the display element is arranged only on the front surface of the first circuit board, while a main portion of a second signal for setting control regarding the pixels is arranged on the rear surface of the first circuit board.

Abstract: A display device includes: an illumination unit having a light source unit capable of emitting light; an illumination control unit controlling the illumination unit; a display clement capable of forming an image with illumination light from the illumination unit; a display control unit controlling the display element; a control unit controlling the display control unit and the illumination control unit based on a video signal; and a first circuit board on which the display element and the display control unit are mounted. When the display element and the display control unit are mounted on the surface of the first circuit board, a first signal for controlling pixels of the display element is arranged only on the front surface of the first circuit board, while a main portion of a second signal for setting control regarding the pixels is arranged on the rear surface of the first circuit board.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: The present invention provides a surface treated steel sheet including a steel sheet; a plating layer containing at least one metal selected from the group consisting of zinc and aluminum on a surface of the steel sheet; and a film on the plating layer, the film containing at least one metal selected from the group consisting of Al, Mg, and Zn, a tetravalent vanadium compound, and a phosphoric acid group. This surface treated steel sheet exhibits excellent corrosion resistance and excellent surface appearance without containing hazardous substances, such as hexavalent chromium, in the film.

Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.

Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.

Abstract: A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

Abstract: A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.