Abstract: A connector includes a housing (10) that is connectable to a mating connector by rotating a lever (40) from an initial position to a connection position on the housing (10). The lever (40) has two arm plates (41) coupled by an operating portion (42). Ridge pieces (44) are on facing surfaces of the arm plates (41). Front and rear rails (22A, 22B) extend perpendicular to a pull-out direction of wires to guide the ridge piece (44) laterally. An introducing portion (26) is open on one end of the rear rail (22B) to receive the ridge piece (44) between the rails (22A, 22B) from a position behind the housing (10). An escaping portion enables the ridge piece (44) to rotate from a position between the rails to the position behind the housing (10) as the lever (40) is rotated from the connection position to the initial position.

Abstract: A particulate measurement apparatus controls a particulate sensor which includes an ion generation section (110), an exhaust gas electrification section (120), an ion trapping section (130), and a second electrode (132). The second electrode (132) is maintained at a potential repulses the ions to assist the trapping of the ions at the ion trapping section (130). The particulate measurement apparatus includes a second isolation transformer (720b) and an auxiliary electrode current measurement circuit (780). The second isolation transformer (720b) applies a voltage to the second electrode (132) through a second wiring line (222). The auxiliary electrode current measurement circuit (780) detects an auxiliary electrode current Iir flowing to the second wiring line (222). The particulate measurement apparatus determines at least one of the state of the particulate sensor and the state of the second wiring line (222) based on the auxiliary electrode current Iir.

Abstract: A female terminal (20) has a rectangular tubular box (30) with an outwardly bulging lance locking portion (53). The female terminal (20) is inserted into a cavity (11) of a connector housing (10) and retained by the lance locking portion (53) being locked by a locking lance (13) in the cavity (11). A first wall (37) of the rectangular tubular box (30) has a closely folded structure obtained by folding the metal plate (70) into a U shape. The lance locking portion (53) is formed on the metal plate (70) in an outermost layer of the closely folded structure, and a first deformation restricting portion (55) to be engaged with a second wall (35) adjacent to the first wall (37) is provided on an end part of the metal plate (70) in the outermost layer on a side opposite to a U-shaped folded portion (51).

Abstract: A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3): A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.

Abstract: Described is a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method including: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.

Abstract: In a particulate measurement apparatus (300) of a particulate measurement system (10), a control section (600) provisionally determines in an anomaly determination process at S130 that a corona core wire (202) is in a wire-breakage anomaly state; namely, that the corona core wire (202) is broken, when a corona low-side current C1 is equal to or smaller than a current determination value C1min, and increments a wire-breakage anomaly counter CNB at S140. The control section (600) determines that the corona core wire (202) is in the wire-breakage anomaly state at S170 when the count value of the wire-breakage anomaly counter CNB is equal to or greater than a wire-breakage determination threshold Cth; namely, that the result of the determination at S160 is “Yes”.

Abstract: A particulate measurement apparatus comprises a control section, which provisionally determines in an anomaly determination process that a corona core wire is in a short anomaly state when a linear voltage is equal to or lower than a particular voltage value and increments a sensor anomaly counter CNS or a chassis anomaly counter. The control section determines that the corona core wire is in a short anomaly state when the count value of one of the anomaly counters is equal to or greater than a determination threshold.

Abstract: A power conversion device includes a first switch and a second switch connected in series between a positive electrode and a negative electrode of a first power supply. A first node is between the first and second switches. The first node can be connected to a load. A first diode has an anode connected to the first node and a cathode connected to the positive electrode of the first power supply. A third switch is connected between a positive electrode of a second power supply and the positive electrode of the first power supply. A first timer is connected to a gate electrode of the third switch. A first comparator has a first input that is connected to a gate electrode of the first switch, a second input at which a reference voltage can be received, and an output that is connected to the first timer.

Abstract: A female terminal (20) has a rectangular tubular box (30) with an outwardly bulging lance locking portion (53). The female terminal (20) is inserted into a cavity (11) of a connector housing (10) and retained by the lance locking portion (53) being locked by a locking lance (13) in the cavity (11). A first wall (37) of the rectangular tubular box (30) has a closely folded structure obtained by folding the metal plate (70) into a U shape. The lance locking portion (53) is formed on the metal plate (70) in an outermost layer of the closely folded structure, and a first deformation restricting portion (55) to be engaged with a second wall (35) adjacent to the first wall (37) is provided on an end part of the metal plate (70) in the outermost layer on a side opposite to a U-shaped folded portion (51).

Abstract: A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.

Abstract: A resonance device is provided having a resonator with opposing upper and lower lids. The resonator includes a base, and multiple vibration arms that are connected to a front end of the base so as to extend away from the base. Moreover, a frame surrounds a periphery of the base portion and the vibration arms and one or more holding arms connect the base to the frame. The base, the vibration arms, and the holding arm include a substrate and a temperature characteristics correction layer laminated on the substrate and having a material with a coefficient of thermal expansion different from that of the substrate. The base, the vibration arms, and the holding arm are formed integrally with the substrate and the temperature characteristics correction layer.

Abstract: A resonator with stabilized resonant frequency that includes a lower electrode, a plurality of upper electrodes, and a piezoelectric film disposed between the lower electrode and the plurality of upper electrodes. Moreover, an upper lid having a first and second opposing surfaces is provided so that the first surface faces and seals a first surface of the resonator. In addition, a lower lid having a first and second opposing surfaces is provided so that the first surface faces and seals a second surface of the resonator. The resonator further includes a power terminal electrically connected to the upper electrodes and a ground terminal provided on the second surface of the upper lid. The lower electrode is electrically connected to the ground terminal by the upper lid.

Abstract: A polymerization inhibitor for a silane enables purification of the silane to a high degree because a polymer is not formed even when heating to distill the silane, even when a cyclic silane monomer is present. A high-purity cyclic silane composition is obtained, in particular high-purity cyclopentasilane, that can be polymerized and applied onto a substrate as a coating-type polysilane composition and fired to produce a good silicon thin film with high conductivity. The polymerization inhibitor includes a secondary or tertiary aromatic amine. The aromatic group is a phenyl group or a naphthyl group. The polymerization inhibitor is present in a proportion of 0.01 to 10 mol % per mole of the silane. In the polymerization inhibitor, a boiling point of the aromatic amine is 196° C. or higher.

Abstract: A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si—H groups)/(Si—H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

Abstract: A terminal member assembly 1 has ground terminals (10A, 10B) each including a main body (20) in the form of a flat plate. A coupling (30) extends from the main body (20) and a wire connecting portion (40) is connected to an extending end of the coupling (30). The ground terminals (10A, 10B) are assembled with each other with the main bodies (20) overlapping each other. At least one (10A) of the ground terminals includes an overlap area (30A) to be overlapped with the coupling (30) of the other ground terminal (10B). The overlap area is located on a surface of the coupling (30) facing the adjacent other ground terminal (10B). A contact portion (36) is located in the overlap area (30A) and projects toward the coupling (30) of the other ground terminal (10B) and is configured to contact the coupling (30) of the other ground terminal (10B).

Abstract: In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.

Abstract: A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.

Abstract: A resonator includes a support frame, a rectangular vibrating plate that performs contour vibration in a predetermined direction, and two pairs of support arms. The vibrating plate includes four vibration regions arranged in a row in the lengthwise direction and electrodes disposed in the vibration regions. Each of the vibration regions vibrate with a phase opposite to phases with which the adjacent vibration regions vibrate upon excitation. A center line of a pair of the electrodes in the lengthwise direction is offset from a center line, in the lengthwise direction, of a corresponding vibration region that includes the electrode disposed thereon.

Abstract: There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex.

Abstract: There is provided a cyclic silane having high purity, particularly cyclopentasilane having high purity, and a composition containing a polysilane obtained by polymerization of the cyclic silane which a highly conductive and good silicon thin film is formed by applying the composition in a form of a coating-type polysilane composition to a substrate, followed by baking.