Abstract: An imprint method using a mold and/or a transfer substrate having a mesa structure includes a resin supply step, a contact step, a curing step, and a mold release step. In the resin supply step, a balance layer is formed by supplying a molded resin also to an area outside of a pattern formation area of the transfer substrate in which a pattern structure is to be formed.

Abstract: An imprint method using a mold and/or a transfer substrate having a mesa structure includes a resin supply step, a contact step, a curing step, and a mold release step. In the resin supply step, a balance layer is formed by supplying a molded resin also to an area outside of a pattern formation area of the transfer substrate in which a pattern structure is to be formed.

Abstract: An imprint method using a mold and/or a transfer substrate having a mesa structure includes a resin supply step, a contact step, a curing step, and a mold release step. In the resin supply step, a balance layer is formed by supplying a molded resin also to an area outside of a pattern formation area of the transfer substrate in which a pattern structure is to be formed.

Abstract: An imprint method using a mold and/or a transfer substrate having a mesa structure includes a resin supply step, a contact step, a curing step, and a mold release step. In the resin supply step, a balance layer is formed by supplying a molded resin also to an area outside of a pattern formation area of the transfer substrate in which a pattern structure is to be formed.

Abstract: A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is “t” nm, a refractive index is “n”, an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.

Abstract: A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is “t” nm, a refractive index is “n”, an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.