Patents by Inventor Yuichi Kamori

Yuichi Kamori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtering target
    Patent number: 11827971
    Abstract: The present invention provides a sputtering target which has low risk to the human body, and which is able to be suppressed in the occurrence of a crack even in cases where sputtering is carried out at a high output power for a long period of time. A sputtering target contains Zn as a main component, contains specific metals including Zr in specific compositions, and contains a complex oxide of Zr.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: November 28, 2023
    Assignee: Dexerials Corporation
    Inventor: Yuichi Kamori
  • Mn—Zn—O sputtering target and production method therefor
    Patent number: 11225709
    Abstract: Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 ?m or less or a maximum height Ry of 10 ?m or less.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: January 18, 2022
    Assignee: Dexerials Corporation
    Inventors: Junichi Sugawara, Yuichi Kamori
  • Mn-Nb-W-Cu-O-BASED SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR
    Publication number: 20210358728
    Abstract: Provided is a Mn—Nb—W—Cu—O-based sputtering target including, in the component composition, Mn, Nb, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of MnNb2O3.67. Also provided is a production method for the sputtering target.
    Type: Application
    Filed: September 9, 2019
    Publication date: November 18, 2021
    Applicant: Dexerials Corporation
    Inventor: Yuichi Kamori
  • Mn-Ta-W-Cu-O-BASED SPUTTERING TARGET, AND PRODUCTION METHOD THEREFOR
    Publication number: 20210269910
    Abstract: Provided is a Mn—Ta—W—Cu—O-based sputtering target including, in the component composition, Mn, Ta, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of Mn4Ta2O9. Also provided is a production method for the sputtering target.
    Type: Application
    Filed: September 9, 2019
    Publication date: September 2, 2021
    Applicant: Dexerials Corporation
    Inventor: Yuichi Kamori
  • SPUTTERING TARGET
    Publication number: 20210180180
    Abstract: The present invention provides a sputtering target which has low risk to the human body, and which is able to be suppressed in the occurrence of a crack even in cases where sputtering is carried out at a high output power for a long period of time. A sputtering target contains Zn as a main component, contains specific metals including Zr in specific compositions, and contains a complex oxide of Zr.
    Type: Application
    Filed: July 17, 2019
    Publication date: June 17, 2021
    Applicant: Dexerials Corporation
    Inventor: Yuichi Kamori
  • Mn—Zn—W—O sputtering target and production method therefor
    Patent number: 10886112
    Abstract: Provided are a Mn—Zn—W—O sputtering target having excellent crack resistance and a production method therefor. The Mn—Zn—W—O sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the Mn—Zn—W—O sputtering target, a ratio PMnO/PW of a maximum peak intensity PMnO of a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity PW of a peak due to W is 0.027 or less.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: January 5, 2021
    Assignee: Dexerials Corporation
    Inventors: Junichi Sugawara, Yuichi Kamori, Fusashige Tokutake
  • Mn—Zn—O sputtering target and production method therefor
    Patent number: 10811237
    Abstract: Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10?3 ?·cm or less.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: October 20, 2020
    Assignee: Dexerials Corporation
    Inventors: Junichi Sugawara, Yuichi Kamori
  • Mn-Zn-O SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
    Publication number: 20190242009
    Abstract: Provided are a Mn—Zn—O sputtering target that can be used for DC sputtering and a production method therefor. The Mn—Zn—O sputtering target has a chemical composition containing Mn, Zn, O, and an element X (X is one or two elements selected from the group consisting of W and Mo). A surface to be sputtered of the target has an arithmetic mean roughness Ra of 1.5 ?m or less or a maximum height Ry of 10 ?m or less.
    Type: Application
    Filed: July 11, 2017
    Publication date: August 8, 2019
    Applicant: Dexerials Corporation
    Inventors: Junichi SUGAWARA, Yuichi KAMORI
  • Target, method for producing the same, memory, and method for producing the same
    Patent number: 10069066
    Abstract: A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: September 4, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kazuhiro Ohba, Yuichi Kamori, Hitoshi Kimura
  • Mn-Zn-W-O SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
    Publication number: 20180186699
    Abstract: Provided are a Mn—Zn—W—O sputtering target having excellent crack resistance and a production method therefor. The Mn—Zn—W—O sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the Mn—Zn—W—O sputtering target, a ratio PMnO/PW of a maximum peak intensity PMnO of a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity PW of a peak due to W is 0.027 or less.
    Type: Application
    Filed: January 25, 2016
    Publication date: July 5, 2018
    Applicant: Dexerials Corporation
    Inventors: Junichi SUGAWARA, Yuichi KAMORI, Fusashige TOKUTAKE
  • MN-ZN-O SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
    Publication number: 20180019109
    Abstract: Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10?3 ?·cm or less.
    Type: Application
    Filed: November 2, 2016
    Publication date: January 18, 2018
    Applicant: Dexerials Corporation
    Inventors: Junichi SUGAWARA, Yuichi KAMORI
  • TARGET, METHOD FOR PRODUCING THE SAME, MEMORY, AND METHOD FOR PRODUCING THE SAME
    Publication number: 20160308125
    Abstract: A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
    Type: Application
    Filed: June 27, 2016
    Publication date: October 20, 2016
    Inventors: Kazuhiro Ohba, Yuichi Kamori, Hitoshi Kimura
  • Target, method for producing the same, memory, and method for producing the same
    Patent number: 9419214
    Abstract: A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: August 16, 2016
    Assignee: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Yuichi Kamori, Hitoshi Kimura
  • TARGET, METHOD FOR PRODUCING THE SAME, MEMORY, AND METHOD FOR PRODUCING THE SAME
    Publication number: 20140151624
    Abstract: A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
    Type: Application
    Filed: February 7, 2014
    Publication date: June 5, 2014
    Applicant: Sony Corporation
    Inventors: Kazuhiro Ohba, Yuichi Kamori, Hitoshi Kimura
  • Methods for manufacturing zinc oxide base sputtering target and transparent electrically conductive film
    Patent number: 8182722
    Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: May 22, 2012
    Assignee: Sony Corporation
    Inventors: Shina Kirita, Toshitaka Kawashima, Takahiro Nagata, Yuichi Kamori
  • TARGET, METHOD FOR PRODUCING THE SAME, MEMORY, AND METHOD FOR PRODUCING THE SAME
    Publication number: 20110027597
    Abstract: A target includes: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te.
    Type: Application
    Filed: July 19, 2010
    Publication date: February 3, 2011
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Yuichi Kamori, Hitoshi Kimura
  • ZINC OXIDE BASED SPUTTERING TARGET, METHOD FOR MANUFACTURING ZINC OXIDE BASED SPUTTERING TARGET, ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, METHOD FOR MANUFACTURING ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, AND ELECTRONIC APPARATUS
    Publication number: 20100123103
    Abstract: A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using ?-Al2O3 as a dopant material.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 20, 2010
    Applicant: SONY CORPORATION
    Inventors: Shina Kirita, Toshitaka Kawashima, Takahiro Nagata, Yuichi Kamori