Abstract: A semiconductor apparatus comprising a first substrate, a second substrate coupled with the first substrate via an insulating member, a third substrate coupled to the first substrate and disposed on the opposite side to the second substrate and a conductive layer including an electrode disposed between the first and second substrate is provided. A through via is disposed so as to pass through the second substrate and a part of the insulating member to reach the electrode. An opening is arranged overlapping the electrode in the first substrate and a part of the insulating member. First and second resin layers are disposed between the electrode and the third substrate, and the first resin layer is disposed within the opening, is disposed between the electrode and the second resin layer and has a different Young's modulus from the second resin layer.

Abstract: A semiconductor apparatus comprising a first substrate, a second substrate coupled with the first substrate via an insulating member, a third substrate coupled to the first substrate and disposed on the opposite side to the second substrate and a conductive layer including an electrode disposed between the first and second substrate is provided. A through via is disposed so as to pass through the second substrate and a part of the insulating member to reach the electrode. An opening is arranged overlapping the electrode in the first substrate and a part of the insulating member. First and second resin layers are disposed between the electrode and the third substrate, and the first resin layer is disposed within the opening, is disposed between the electrode and the second resin layer and has a different Young's modulus from the second resin layer.

Abstract: An electronic component manufacturing method includes preparing a structure including a conductive member, forming a seed metal layer including first and second portions electrically connected to the conductive member on a surface of the structure, forming a plating layer on the first portion of the seed metal layer in a state in which the second portion of the seed metal layer is covered by a first member, forming a conductive second member on the first portion of the seed metal layer via the plating layer, and etching the second portion of the seed metal layer in a state in which the plating layer is covered by the second member.

Abstract: A photoelectric conversion device includes a semiconductor substrate having a photoelectric conversion unit, a magnetic layer arranged over an opposite side to a light-receiving face of the semiconductor substrate, and an infrared ray absorbing layer arranged between the semiconductor substrate and the magnetic layer.

Abstract: According to one aspect of the present invention, a method of manufacturing a semiconductor device is provided, which includes a bonding step bonding a semiconductor substrate having a semiconductor element disposed on a first surface, to a support substrate, at least through an adhesive layer between the semiconductor substrate and the support substrate, and a groove forming step forming a groove in a scribe area of the semiconductor substrate, from a side of a second surface of the semiconductor substrate, the second surface being opposite to the first surface, and in the groove forming step, a conductive layer between the semiconductor substrate and the support substrate is exposed at a bottom of the groove, without the adhesive layer being exposed in the groove.

Abstract: An electronic component manufacturing method includes preparing a structure including a conductive member, forming a seed metal layer including first and second portions electrically connected to the conductive member on a surface of the structure, forming a plating layer on the first portion of the seed metal layer in a state in which the second portion of the seed metal layer is covered by a first member, forming a conductive second member on the first portion of the seed metal layer via the plating layer, and etching the second portion of the seed metal layer in a state in which the plating layer is covered by the second member.

Abstract: A photoelectric conversion device includes a semiconductor substrate having a photoelectric conversion unit, a magnetic layer arranged over an opposite side to a light-receiving face of the semiconductor substrate, and an infrared ray absorbing layer arranged between the semiconductor substrate and the magnetic layer.

Abstract: According to one aspect of the present invention, a method of manufacturing a semiconductor device is provided, which includes a bonding step bonding a semiconductor substrate having a semiconductor element disposed on a first surface, to a support substrate, at least through an adhesive layer between the semiconductor substrate and the support substrate, and a groove forming step forming a groove in a scribe area of the semiconductor substrate, from a side of a second surface of the semiconductor substrate, the second surface being opposite to the first surface, and in the groove forming step, a conductive layer between the semiconductor substrate and the support substrate is exposed at a bottom of the groove, without the adhesive layer being exposed in the groove.