Abstract: A storage unit stores update data corresponding to transactions being executed and indicating updating processes yet to be reflected in a database. A control unit generates a list indicating transactions. When apparatuses executing transactions are switched from an information processing apparatus to another information processing apparatus, the control unit transmits the list to the other information processing apparatus, and migrates the update data to the other information processing apparatus based on the list.

Abstract: A storage unit stores update data corresponding to transactions being executed and indicating updating processes yet to be reflected in a database. A control unit generates a list indicating transactions. When apparatuses executing transactions are switched from an information processing apparatus to another information processing apparatus, the control unit transmits the list to the other information processing apparatus, and migrates the update data to the other information processing apparatus based on the list.

Abstract: A secondary electron image generated by an electron beam is detected by a secondary electron/secondary ion detector while a silicon substrate is etched by a focused ion beam from a back surface of a semiconductor chip. A time point where the electron beam transmits through the silicon substrate, a contrast of a secondary electron image of a separation layer, a polysilicon layer and the like is detected by a picture image processing system is assumed to be a processing end point. At this time, by changing a setting for an acceleration voltage of the electron beam, an arbitrary remaining silicon thickness can be obtained.

Abstract: A secondary electron image generated by an electron beam is detected by a secondary electron/secondary ion detector while a silicon substrate is etched by a focused ion beam from a back surface of a semiconductor chip. A time point where the electron beam transmits through the silicon substrate, a contrast of a secondary electron image of a separation layer, a polysilicon layer and the like is detected by a picture image processing system is assumed to be a processing end point. At this time, by changing a setting for an acceleration voltage of the electron beam, an arbitrary remaining silicon thickness can be obtained.

Abstract: The present invention relates to a method (apparatus) of processing a semiconductor apparatus, wherein a processing beam is irradiated on a semiconductor apparatus comprising an insulation film and a conductor embedded in the insulation film while the insulation film is scanned from a surface side thereof so that the insulation film and the conductor are burned and cut. The processing method (apparatus) comprises a scanning region setting step for setting a scanning region of the processing beam to a region where a scanning column direction thereof traverses a cut section of the conductor and a beam scanning step for irradiating the processing beam for scanning along the set scanning region, wherein the processing beam used for scanning a final scanning column is supplied with a dosage capable of eliminating a conductive residue generated by the irradiation of the processing beam on the conductor and attached to a cut end surface facing the final scanning column in the beam scanning step.

Abstract: A high-voltage MOS transistor wherein a dopant concentration of a source offset region is set lower than a dopant concentration of a drain offset region whereby a resistance value of the resource region is set independently of a resistance value of the drain region in such a manner as to maintain a high sustaining breakdown voltage of the high-voltage MOS transistor, which is based on a voltage of the source offset region and a voltage of a substrate region directly under a gate insulating film during operation of the high-voltage MOS transistor.