Patents by Inventor Yuichi Kuromizu
Yuichi Kuromizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10578819Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: GrantFiled: June 19, 2018Date of Patent: March 3, 2020Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Publication number: 20180341076Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: ApplicationFiled: June 19, 2018Publication date: November 29, 2018Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Patent number: 10025051Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: GrantFiled: November 3, 2017Date of Patent: July 17, 2018Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Patent number: 9983375Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: GrantFiled: May 29, 2015Date of Patent: May 29, 2018Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Publication number: 20180059344Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: ApplicationFiled: November 3, 2017Publication date: March 1, 2018Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Publication number: 20150293319Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: ApplicationFiled: May 29, 2015Publication date: October 15, 2015Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Patent number: 7858410Abstract: A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.Type: GrantFiled: November 3, 2008Date of Patent: December 28, 2010Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Publication number: 20100177799Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: ApplicationFiled: March 22, 2010Publication date: July 15, 2010Applicant: SONY CORPORATIONInventors: Yoshiaki WATANABE, Hironobu NARUI, Yuichi KUROMIZU, Yoshinori YAMAUCHI, Yoshiyuki TANAKA
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Patent number: 7684453Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: GrantFiled: May 18, 2004Date of Patent: March 23, 2010Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Patent number: 7672347Abstract: A semiconductor light emitting device includes: a substrate; a laminate structure including a first semiconductor layer, an active layer, and a second semiconductor layer; and a current confinement part for limiting a current injection region of the active layer in the second semiconductor layer, or between the active layer and the second semiconductor layer, on the substrate, wherein the current confinement part includes a current confinement layer having a conductive region corresponding to the current injection region of the active layer and a nonconductive region corresponding to a region other than the current injection region of the active layer, and an intermediate layer provided between the current confinement layer and the second semiconductor layer or the active layer in order to prevent a mixed crystal from being formed between the current confinement layer and the second semiconductor layer or the active layer.Type: GrantFiled: May 10, 2005Date of Patent: March 2, 2010Assignee: Sony CorporationInventor: Yuichi Kuromizu
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Publication number: 20090137076Abstract: A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.Type: ApplicationFiled: November 3, 2008Publication date: May 28, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Patent number: 7515623Abstract: A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.Type: GrantFiled: June 2, 2005Date of Patent: April 7, 2009Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Publication number: 20080173885Abstract: A semiconductor light-emitting device includes: a semiconductor layer including a light-emitting region and having an emission surface on its surface; an insulating layer arranged on a surface of the semiconductor layer opposite to; a first metal layer deposited on a surface of the insulating layer opposite to a surface where the semiconductor layer is arranged; a contact portion buried in a part of the insulating layer, the contact portion electrically connecting the semiconductor layer and the first metal layer; and a second metal layer having higher reflectivity with respect to a light-emitting wavelength than the first metal layer, the second metal layer arranged on a surface of the first metal layer opposite to a surface where the insulating layer is arranged, wherein a metal of which the first metal layer is made has higher adhesion to the insulating layer than a metal of which the second layer is made.Type: ApplicationFiled: February 19, 2007Publication date: July 24, 2008Inventor: Yuichi Kuromizu
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Patent number: 7388893Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.Type: GrantFiled: August 17, 2006Date of Patent: June 17, 2008Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yoshinori Yamauchi, Yuichi Kuromizu, Yoshiyuki Tanaka
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Patent number: 7332744Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.Type: GrantFiled: November 8, 2004Date of Patent: February 19, 2008Assignee: Sony CorporationInventors: Tomonori Hino, Hironobu Narui, Takayuki Kawasumi, Tsuyoshi Nagatake, Yuichi Kuromizu, Tadahiko Kawasaki, Noriko Kobayashi, Masaki Shiozaki, Jugo Mitomo, Michiko Komine
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Publication number: 20070091966Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.Type: ApplicationFiled: December 20, 2006Publication date: April 26, 2007Inventors: Tomonori Hino, Hironobu Narui, Takayuki Kawasumi, Tsuyoshi Nagatake, Yuichi Kuromizu, Tadahiko Kawasaki, Noriko Kobayashi, Masaki Shiozaki, Jugo Mitomo, Michiko Komine
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Publication number: 20070086499Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.Type: ApplicationFiled: December 20, 2006Publication date: April 19, 2007Inventors: Tomonori Hino, Hironobu Narui, Takayuki Kawasumi, Tsuyoshi Nagatake, Yuichi Kuromizu, Tadahiko Kawasaki, Noriko Kobayashi, Masaki Shiozaki, Jugo Mitomo, Michiko Komine
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Publication number: 20060285568Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.Type: ApplicationFiled: August 17, 2006Publication date: December 21, 2006Inventors: Yoshiaki Watanabe, Hironobu Narui, Yoshinori Yamauchi, Yuichi Kuromizu, Yoshiyuki Tanaka
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Patent number: 7099364Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.Type: GrantFiled: September 17, 2004Date of Patent: August 29, 2006Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Hironobu Narui, Yoshinori Yamauchi, Yuichi Kuromizu, Yoshiyuki Tanaka
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Patent number: 7006544Abstract: A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circular (100) plane upper level portion, a step portion, and an annular (100) plane lower level portion surrounding the upper level portion with the step portion therebetween.Type: GrantFiled: April 30, 2004Date of Patent: February 28, 2006Assignee: Sony CorporationInventors: Yuichi Kuromizu, Hironobu Narui, Yoshinori Yamauchi, Yoshiyuki Tanaka, Yoshiaki Watanabe