Patents by Inventor Yuichi Madokoro
Yuichi Madokoro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080210883Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.Type: ApplicationFiled: March 19, 2008Publication date: September 4, 2008Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hiroyasu Kaga, Yuichi Madokoro, Shigeru Izawa, Tohru Ishitani, Kaoru Umemura
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Patent number: 7420181Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.Type: GrantFiled: April 4, 2007Date of Patent: September 2, 2008Assignee: Hitachi High-Technologies CorporationInventors: Hiroyasu Kaga, Yuichi Madokoro, Shigeru Izawa, Tohru Ishitani, Kaoru Umemura
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Patent number: 7397050Abstract: A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam, a specimen holder to mount a specimen separated by the irradiation of the ion beam, a holder cassette to hold the specimen holder, and a sample stage to hold the sample and the holder cassette, wherein said holder cassette is transferred to outside of the chamber in a condition of holding said specimen holder with the specimen mounted.Type: GrantFiled: February 2, 2007Date of Patent: July 8, 2008Assignee: Hitachi, Ltd.Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Patent number: 7397051Abstract: A specimen fabrication apparatus including: a vacuum chamber that accommodates a sample stage to mount a sample, an irradiating optical system that irradiates a focused ion beam to the sample to form a specimen, and a specimen holder placed in the vacuum chamber, to which said formed specimen is transferred by transferring means while the specimen chamber remains substantially sealed.Type: GrantFiled: February 2, 2007Date of Patent: July 8, 2008Assignee: Hitachi, Ltd.Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Patent number: 7397052Abstract: A system for analyzing a semiconductor device, including: a first specimen fabricating apparatus including: a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate; a second specimen fabricating apparatus, and an analyzer to analyze the specimen, wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.Type: GrantFiled: February 2, 2007Date of Patent: July 8, 2008Assignee: Hitachi, Ltd.Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Publication number: 20070257200Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.Type: ApplicationFiled: April 4, 2007Publication date: November 8, 2007Applicant: Hitachi High-Technologies CorporationInventors: Hiroyasu Kaga, Yuichi Madokoro, Shigeru Izawa, Tohru Ishitani, Kaoru Umemura
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Publication number: 20070152174Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.Type: ApplicationFiled: March 6, 2007Publication date: July 5, 2007Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yuichi Madokoro, Shigeru Izawa, Kaoru Umemura, Hiroyasu Kaga
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Publication number: 20070145302Abstract: A system for analyzing a semiconductor device, including: a first specimen fabricating apparatus including: a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate; a second specimen fabricating apparatus, and an analyzer to analyze the specimen, wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.Type: ApplicationFiled: February 2, 2007Publication date: June 28, 2007Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Publication number: 20070145300Abstract: A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber, with an ion beam, a specimen holder to mount a specimen separated by the irradiation of the ion beam, a holder cassette to hold the specimen holder, and a sample stage to hold the sample and the holder cassette, wherein said holder cassette is transferred to outside of the chamber in a condition of holding said specimen holder with the specimen mounted.Type: ApplicationFiled: February 2, 2007Publication date: June 28, 2007Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Publication number: 20070145301Abstract: A specimen fabrication apparatus including: a vacuum chamber that accommodates a sample stage to mount a sample, an irradiating optical system that irradiates a focused ion beam to the sample to form a specimen, and a specimen holder placed in the vacuum chamber, to which said formed specimen is transferred by transferring means while the specimen chamber remains substantially sealed.Type: ApplicationFiled: February 2, 2007Publication date: June 28, 2007Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Publication number: 20070145299Abstract: A specimen fabrication apparatus including: a sample stage to mount or hold a sample substrate, an ion beam irradiating optical system to irradiate the sample substrate with an ion beam, a specimen holder to mount a specimen obtained from the sample substrate, a transferring means including a probe, and a deposition-gas supplying source to supply a deposition-gas for forming a deposition-film between the specimen and the probe.Type: ApplicationFiled: February 2, 2007Publication date: June 28, 2007Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Patent number: 7235798Abstract: In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.Type: GrantFiled: June 14, 2005Date of Patent: June 26, 2007Assignee: Hitachi High-Technologies CorporationInventors: Tohru Ishitani, Hiroyuki Muto, Yuichi Madokoro
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Patent number: 7211805Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.Type: GrantFiled: December 21, 2005Date of Patent: May 1, 2007Assignee: Hitachi High-Technologies CorporationInventors: Hiroyasu Kaga, Yuichi Madokoro, Shigeru Izawa, Tohru Ishitani, Kaoru Umemura
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Patent number: 7189982Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.Type: GrantFiled: August 17, 2005Date of Patent: March 13, 2007Assignee: Hitachi High-Technologies CorporationInventors: Yuichi Madokoro, Shigeru Izawa, Kaoru Umemura, Hiroyasu Kaga
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Patent number: 7176458Abstract: A specimen fabrication apparatus including: an ion source, an optical system for irradiating a projection ion beam to a sample, wherein the optical system includes a patterning mask to form a ion beam emitted from the ion source into the projection ion beam, a sample stage to mount the sample, a vacuum specimen chamber to contain the sample stage, a probe for separating a micro-specimen from the sample by irradiation of the projection ion beam, a specimen holder to fix the micro-specimen, wherein the projection ion beam is irradiated to the micro-specimen fixed to the specimen holder and extracted by the probe in the specimen chamber, so that a finish fabrication to the micro-specimen is enabled.Type: GrantFiled: June 14, 2006Date of Patent: February 13, 2007Assignee: Hitachi, Ltd.Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Patent number: 7138628Abstract: A specimen fabrication apparatus including: a specimen chamber, a sample stage in the specimen chamber, to mount a specimen substrate, a transfer unit to extract a micro-specimen from the specimen substrate, and to transfer the micro-specimen, within the specimen chamber; a specimen holder in the specimen chamber, to receive the micro-specimen from the transfer unit, and to have the micro-specimen affixed thereto, and an irradiating optical system to irradiate an ion beam to the specimen substrate or to the micro-specimen affixed to the specimen holder, wherein the transfer unit effects transfer of the micro-specimen from the specimen substrate to the specimen holder, and the irradiating optical system irradiates the ion beam onto the micro-specimen affixed to the specimen holder, while the specimen chamber remains substantially sealed.Type: GrantFiled: March 28, 2006Date of Patent: November 21, 2006Assignee: Hitachi, Ltd.Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Publication number: 20060231776Abstract: A specimen fabrication apparatus including: an ion source, an optical system for irradiating a projection ion beam to a sample, wherein the optical system includes a patterning mask to form a ion beam emitted from the ion source into the projection ion beam, a sample stage to mount the sample, a vacuum specimen chamber to contain the sample stage, a probe for separating a micro-specimen from the sample by irradiation of the projection ion beam, a specimen holder to fix the micro-specimen, wherein the projection ion beam is irradiated to the micro-specimen fixed to the specimen holder and extracted by the probe in the specimen chamber, so that a finish fabrication to the micro-specimen is enabled.Type: ApplicationFiled: June 14, 2006Publication date: October 19, 2006Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Publication number: 20060192099Abstract: A specimen fabrication apparatus including: a specimen chamber, a sample stage in the specimen chamber, to mount a specimen substrate, a transfer unit to extract a micro-specimen from the specimen substrate, and to transfer the micro-specimen, within the specimen chamber; a specimen holder in the specimen chamber, to receive the micro-specimen from the transfer unit, and to have the micro-specimen affixed thereto, and an irradiating optical system to irradiate an ion beam to the specimen substrate or to the micro-specimen affixed to the specimen holder, wherein the transfer unit effects transfer of the micro-specimen from the specimen substrate to the specimen holder, and the irradiating optical system irradiates the ion beam onto the micro-specimen affixed to the specimen holder, while the specimen chamber remains substantially sealed.Type: ApplicationFiled: March 28, 2006Publication date: August 31, 2006Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Patent number: 7084399Abstract: For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.Type: GrantFiled: October 27, 2004Date of Patent: August 1, 2006Assignee: Hitachi, Ltd.Inventors: Hiroyuki Muto, Tohru Ishitani, Yuichi Madokoro
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Patent number: 7071475Abstract: A specimen fabrication apparatus including a movable sample stage on which a specimen substrate is mounted, a probe connector for firmly joining a tip of a probe to a portion of the specimen substrate in a vicinity of an area on the specimen substrate to be observed in an observation apparatus, a micro-specimen separator for separating from the specimen substrate a micro-specimen to which the tip of the probe is firmly joined, the micro-specimen including the area on the specimen substrate to be observed and the portion of the specimen substrate to which the tip of the probe is firmly joined, a micro-specimen fixer for fixing the micro-specimen separated from the specimen substrate to a specimen holder of the observation apparatus, and a probe separator for separating the tip of the probe from the micro-specimen fixed to the specimen holder.Type: GrantFiled: September 16, 2004Date of Patent: July 4, 2006Assignee: Hitachi, Ltd.Inventors: Satoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi