Abstract: A steam generation apparatus includes: a heat medium flow passage through which a heat medium flows; a primary economizer disposed in the heat medium flow passage; a secondary economizer disposed in the heat medium flow passage at an upstream side of the primary economizer with respect to a flow direction of the heat medium; a primary evaporator disposed in the heat medium flow passage at an upstream side of the secondary economizer with respect to the flow direction of the heat medium; a first flash tank for generating flash steam; a first feed water line configured to supply water heated by the primary economizer to the secondary economizer; and a second feed water line disposed so as to branch from the first feed water line and configured to supply the water heated by the primary economizer to the first flash tank.

Abstract: A steam generation apparatus includes: a heat medium flow passage through which a heat medium flows; a primary economizer disposed in the heat medium flow passage; a secondary economizer disposed in the heat medium flow passage at an upstream side of the primary economizer with respect to a flow direction of the heat medium; a primary evaporator disposed in the heat medium flow passage at an upstream side of the secondary economizer with respect to the flow direction of the heat medium; a first flash tank for generating flash steam; a first feed water line configured to supply water heated by the primary economizer to the secondary economizer; and a second feed water line disposed so as to branch from the first feed water line and configured to supply the water heated by the primary economizer to the first flash tank.

Abstract: Ensuring a high output temperature while preventing leakage of radioactive substances, etc. A nuclear reactor includes a fuel unit; a shield unit that covers a circumference of the fuel unit for shielding from radioactive rays; and a heat conductive portion that penetrates the shield unit, is arranged such that the heat conductive portion extends to inside of the fuel unit and outside of the shield unit, and transfers heat of the fuel unit to the outside of the shield unit by solid heat conduction.

Abstract: A heat pipe includes an external cylinder extending in an axial direction, an internal cylinder provided inside the external cylinder so as to extend in the axial direction, and a wick provided between and integrally with the external cylinder and the internal cylinder. The wick includes a plurality of micro through portions extending linearly in the axial direction. According to this configuration, a working fluid moves smoothly in the axial direction without being blocked, and thus it is possible to provide a heat pipe having a further improved heat exchange performance.

Abstract: In a non-limiting embodiment, a semiconductor device may include a magnetic tunnel junction (MTJ) stack. The MTJ stack may include a reference layer comprising a magnetic layer, a first tunneling barrier layer arranged over the reference layer, a free layer comprising a magnetic layer arranged over the first tunneling barrier layer, and a capping layer arranged over the reference layer, the first tunneling barrier layer and the free layer. The capping layer may be a non-magnetic layer. According to various non-limiting embodiments, the capping layer may include a rare earth element. According to various non-limiting embodiments, the MTJ stack may further include a second tunneling barrier layer arranged between the free layer and the capping layer. The capping layer may contact the second tunneling barrier layer.

Abstract: A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.

Abstract: Structures for a non-volatile memory element and methods of fabricating a structure for a non-volatile memory element. The structure includes a bottom electrode, a seed layer on the bottom electrode, and a magnetic-tunneling-junction layer stack on the seed layer. The seed layer is composed of a nickel-chromium-ruthenium alloy including ruthenium in an amount ranging from seven atomic percent by weight to eighty-four atomic percent by weight.

Abstract: Structures for a non-volatile memory element and methods of fabricating a structure for a non-volatile memory element. The structure includes a bottom electrode, a seed layer on the bottom electrode, and a magnetic-tunneling-junction layer stack on the seed layer. The seed layer is composed of a nickel-chromium-ruthenium alloy including ruthenium in an amount ranging from seven atomic percent by weight to eighty-four atomic percent by weight.

Abstract: A rotary machine of the present invention is provided with: a bearing including an inner ring secured to an outer peripheral surface of a rotating element, an outer ring disposed outside the inner ring, and a plurality of rolling elements interposed between the inner ring and the outer ring; a bearing housing disposed outside the bearing and to which the outer ring is secured; a casing disposed outside the bearing housing and to which the bearing housing is secured; and a temperature difference reducer to reduce a difference between a temperatures of the outer and inner rings.

Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.

Abstract: This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.

Abstract: A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.

Abstract: A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.

Abstract: The present invention maintains a compact evaporator size in a centrifugal chiller utilizing a low pressure refrigerant used at a maximum pressure of less than 0.2 MPaG while avoiding efficiency losses and equipment damage that result from carryover of liquid state refrigerant to the turbo compressor side.

Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

Abstract: A laser oscillation cooling device (100) includes a light emitting section (1) that emits laser excitation light (Z1), a laser excitation section (2) that excites the laser excitation light (Z1) to emit laser light (Z2) and has a heat generating region (S) where heat is locally generated, a storage tank (3) capable of storing an extremely low temperature liquid (L), a pressurizing section (31) that brings the extremely low temperature liquid (L) into a sub-cool state by pressurizing the inside of the storage tank (3), and a jetting supply section (4) that removes heat from the laser excitation section (2) by jetting the extremely low temperature liquid (L) in the sub-cool state from a plurality of jet ports arrayed in a two-dimensional manner to the laser excitation section (2).

Abstract: A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.

Abstract: This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.

Abstract: A laser oscillation cooling device (100) includes a light emitting section (1) that emits laser excitation light (Z1), a laser excitation section (2) that excites the laser excitation light (Z1) to emit laser light (Z2) and has a heat generating region (S) where heat is locally generated, a storage tank (3) capable of storing an extremely low temperature liquid (L), a pressurizing section (31) that brings the extremely low temperature liquid (L) into a sub-cool state by pressurizing the inside of the storage tank (3), and a jetting supply section (4) that removes heat from the laser excitation section (2) by jetting the extremely low temperature liquid (L) in the sub-cool state from a plurality of jet ports arrayed in a two-dimensional manner to the laser excitation section (2).

Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.