Abstract: Particles including a biodegradable resin and a metal oxide, in which a ratio of an absorption amount of oleic acid to an absorption amount of triglyceride in the particles is 1.5 or more.

Abstract: A method for producing particles is provided. The method includes: preparing a bioactive-substance-containing liquid that includes a bioactive substance and a solvent; discharging the bioactive-substance-containing liquid as droplets; and removing the solvent from the droplets to form particles, wherein a biological activity ratio represented by {(biological activity level B/biological activity level A)×100} is 80% or greater, where the biological activity level A is a biological activity level of the bioactive substance before the preparing the bioactive-substance-containing liquid, and the biological activity level B is a biological activity level of the bioactive substance after the preparing of the bioactive-substance-containing liquid.

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.

Abstract: Thermal efficiency is improved. This chemical reaction device includes: a catalyst layer; a first heat exchange section, a surface temperature of which is maintained not higher than a dew point of a reacted gas produced by a reaction; a dividing wall; and a flow path forming section located within a space and forming a flow path for the reacted gas that flows from the catalyst layer into the space through an opening. The flow path forming section includes a baffle that enables heat exchange in the flow path between a portion of the reacted gas which portion flows from the catalyst layer toward the first heat exchange section and a portion of the reacted gas which portion flows from the first heat exchange section toward the catalyst layer.

Abstract: Provided is a technique for processing a substrate in a short time. A processing apparatus 1 includes a table 10 configured to hold a substrate Wf such that a surface to be processed of the substrate faces upward, a table rotation device 20 configured to rotate the table, a plurality of heads 30a, 40a to each of which a processing pad Pd1, Pd2 is attached, the processing pad having an area smaller than an area of the surface to be processed of the substrate, a plurality of head rotation devices 50a, 55a, a plurality of pressing devices 60a, 65a, each of the plurality of pressing devices has an electromagnetic actuator configured to apply a pressing force to a corresponding one of the plurality of heads by utilizing electromagnetic force, and a plurality of swing devices 70a, 80a.

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.

Abstract: A resin particle is provided that includes a biodegradable resin. The resin particle has a volume average particle size of 5 ?m or more and 50 ?m or less and a relative span factor of 1.2 or less.

Abstract: In a chemical reaction device that improves a yield of a product and that causes a reaction, progress of which in a gaseous phase is restricted by a chemical equilibrium between a source material and the product, a cumulative value is not less than 500 mm2, the cumulative value being obtained by cumulatively adding, from one end to the other end of a cooling surface in a height direction, products of (i) a distance L between (a) a surface of a catalyst layer which surface is in contact with a transmission wall and (b) an outer surface of the cooling surface and (ii) a height H of the catalyst layer corresponding to the outer surface having the distance L.

Abstract: An oxide semiconductor film with high carrier mobility is provided. The oxide semiconductor film contains indium and oxygen. The oxide semiconductor film includes a crystal grain. The gallium concentration and the zinc concentration in the oxide semiconductor film are each lower than or equal to 0.1 atomic %. The extension length of a grain boundary in the oxide semiconductor film is greater than or equal to 0 nm and less than or equal to 10000 nm. The extension length of the grain boundary is calculated using a field of view of 90 nm square extracted from a TEM image of the oxide semiconductor film. The oxide semiconductor film has a property of transmitting oxygen in a range higher than or equal to 2×1020 atoms/cm3 and lower than or equal to 1×1021 atoms/cm3 in heat treatment at a heating temperature of 400° C. for a treatment time of 8 hours.

Abstract: A method for manufacturing a functional elongate instrument includes: a base material preparation step of obtaining a wire-inserted base material by inserting a first wire as an actuator member through a first through-hole of a plurality of through-holes formed in a base material and inserting a second wire opposite to the first wire through a second through-hole of the plurality of through-holes; a composite fiber formation step of obtaining a composite fiber by heating and drawing the wire-inserted base material while supplying the first wire and the second wire; a connection step of forming, at a tip portion of the composite fiber, a connection portion configured to electrically connect the first wire and the second wire; and an insulation step of forming an insulating layer on a surface of the connection portion.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Abstract: A particulate poly(lactic-co-glycolic) acid (PLGA) is provided. The particulate PLGA comprises a poly(lactic-co-glycolic) acid (PLGA), and has an average volume-based panicle diameter of 80 nm or less and a relative span factor (R.S.F.) satisfying the following formula (1): 0<R.S.F.?1.20??Formula (1) where R.S.F. is defined by (D90?D10/D30, where D90, D50, and D10 respectively represent particle diameters at cumulative rates of 90%, 50%, and 10% by volume based on a cumulative particle size distribution counted from a small-particle side.

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Abstract: A head-mounted information processing apparatus includes: a communication unit configured to communicate with an external apparatus; an imaging unit configured to generate a captured image by imaging a given imaging range; a display unit configured to display an image; and a controller, wherein the imaging unit generates the captured image in which an input interface is imaged, by imaging the imaging range including the input interface connected to the external apparatus, and the controller performs control for causing an image acquired from the external apparatus to be displayed in a first display region that is a part of a display region of the display unit, and causing the captured image including the input interface to be displayed in a second display region that is another part of the display region.

Abstract: A display apparatus includes: a display; a display driver that drives the display such that the display displays in accordance with display data; and a host controller that transfers update display data of one screen to the display driver. The display driver includes a light-emission controller that causes a self-luminous elements to emit light, and a memory that stores the update display data of the one screen. The display driver reads the update display data on the memory after an elapse of a predetermined period of time from a drive end time at which the display controller finishes driving in accordance with the update display data and drives the screen by using the read update display data. The display driver drives the self-luminous elements once or more at a timing when the update display data from the host controller to the display driver is not updated.

Abstract: Provided are a transistor with favorable electrical characteristics, a transistor with a high on-state current, a transistor with low parasitic capacitance, or a transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated. An oxide semiconductor layer included in the transistor, the semiconductor device, or the memory device includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a surface on which the oxide semiconductor layer is to be formed to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron 10 microscope, bright spots arranged in a layered manner in a direction parallel to the surface are observed in each of the first region, the second region, and the third region.

Abstract: A semiconductor device including an oxide semiconductor layer which is formed over a substrate and includes indium is provided. The oxide semiconductor layer is formed in parallel or substantially in parallel with a surface of the substrate. The oxide semiconductor layer includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a formation surface of the oxide semiconductor layer to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the formation surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron microscope, bright spots arranged in a layered manner in a direction parallel to the formation surface are observed in each of the first region, the second region, and the third region.

Abstract: This lithium-containing transition metal composite oxide includes secondary particles that are aggregates of primary particles into or from which lithium ions are dopable or dedopable, and satisfies the following conditions: (1) the lithium-containing transition metal composite oxide is represented by Formula (I), Li[Lix(Ni(1?y?z?w)CoyMnzMw)1?x]O2??(I) (2) from X-ray photoelectron spectroscopy, a specific ? is calculated for each of the surface of the secondary particle and the inside of the secondary particle, and when the ? value of the surface of the secondary particle is referred to as ?1 and the ? value of the inside of the secondary particle is referred to as ?2, ?1 and ?2 satisfy the condition of Formula (II). 0.3??1/?2?1.0??(II).

Abstract: A source material gas (31) is supplied to a catalyst (30), a first heating medium (21) is caused to flow through a first heat exchange section (22) so that a temperature of a surface of the first heat exchange section (22) on a catalyst side is maintained higher than a dew point of a reacted gas (32), a second heating medium (51) is caused to flow through a second heat exchange section (52) so that a temperature of a surface of the second heat exchange section (52) on a space (4) side is maintained not higher than the dew point of the reacted gas (32), and a liquid obtained by condensation in the space (4) is allowed to fall down so as to be separated from the source material gas.