Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Abstract: A vibration generating device includes a vibrator, and a driving device configured to switch between a first period and a second period at a third frequency, the first period being a period during which a first signal having a first frequency of 100 Hz or higher and 400 Hz or lower is supplied to the vibrator, the second period being a period during which a second signal having a second frequency that is lower than the first frequency and is 10 Hz or higher and 250 Hz or lower is supplied to the vibrator, the third frequency being 1 Hz or higher and 100 Hz or less.

Abstract: A head-mounted information processing apparatus includes: a communication unit configured to communicate with an external apparatus; an imaging unit configured to generate a captured image by imaging a given imaging range; a display unit configured to display an image; and a controller, wherein the imaging unit generates the captured image in which an input interface is imaged, by imaging the imaging range including the input interface connected to the external apparatus, and the controller performs control for causing an image acquired from the external apparatus to be displayed in a first display region that is a part of a display region of the display unit, and causing the captured image including the input interface to be displayed in a second display region that is another part of the display region.

Abstract: A columnar metal component includes a first main surface, and a second main surface on an opposite side to the first main surface. The first main surface includes a first groove. The metal component includes a through-hole penetrating the metal component from the first main surface to the second main surface.

Abstract: A display apparatus includes: a display; a display driver that drives the display such that the display displays in accordance with display data; and a host controller that transfers update display data of one screen to the display driver. The display driver includes a light-emission controller that causes a self-luminous elements to emit light, and a memory that stores the update display data of the one screen. The display driver reads the update display data on the memory after an elapse of a predetermined period of time from a drive end time at which the display controller finishes driving in accordance with the update display data and drives the screen by using the read update display data. The display driver drives the self-luminous elements once or more at a timing when the update display data from the host controller to the display driver is not updated.

Abstract: A semiconductor device including an oxide semiconductor layer which is formed over a substrate and includes indium is provided. The oxide semiconductor layer is formed in parallel or substantially in parallel with a surface of the substrate. The oxide semiconductor layer includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a formation surface of the oxide semiconductor layer to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the formation surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron microscope, bright spots arranged in a layered manner in a direction parallel to the formation surface are observed in each of the first region, the second region, and the third region.

Abstract: Provided are a transistor with favorable electrical characteristics, a transistor with a high on-state current, a transistor with low parasitic capacitance, or a transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated. An oxide semiconductor layer included in the transistor, the semiconductor device, or the memory device includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a surface on which the oxide semiconductor layer is to be formed to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron 10 microscope, bright spots arranged in a layered manner in a direction parallel to the surface are observed in each of the first region, the second region, and the third region.

Abstract: This lithium-containing transition metal composite oxide includes secondary particles that are aggregates of primary particles into or from which lithium ions are dopable or dedopable, and satisfies the following conditions: (1) the lithium-containing transition metal composite oxide is represented by Formula (I), Li[Lix(Ni(1?y?z?w)CoyMnzMw)1?x]O2??(I) (2) from X-ray photoelectron spectroscopy, a specific ? is calculated for each of the surface of the secondary particle and the inside of the secondary particle, and when the ? value of the surface of the secondary particle is referred to as ?1 and the ? value of the inside of the secondary particle is referred to as ?2, ?1 and ?2 satisfy the condition of Formula (II). 0.3??1/?2?1.0??(II).

Abstract: A source material gas (31) is supplied to a catalyst (30), a first heating medium (21) is caused to flow through a first heat exchange section (22) so that a temperature of a surface of the first heat exchange section (22) on a catalyst side is maintained higher than a dew point of a reacted gas (32), a second heating medium (51) is caused to flow through a second heat exchange section (52) so that a temperature of a surface of the second heat exchange section (52) on a space (4) side is maintained not higher than the dew point of the reacted gas (32), and a liquid obtained by condensation in the space (4) is allowed to fall down so as to be separated from the source material gas.

Abstract: A transistor with high electrical characteristics is provided. A transistor with a high on-state current is provided. A transistor with small parasitic capacitance is provided. A transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated is provided. The transistor includes a first conductive layer, a second conductive layer, a semiconductor layer, a gate insulating layer over the semiconductor layer, and a gate electrode over the gate insulating layer. A first insulating layer is between the first conductive layer and the second conductive layer. The second conductive layer is over the first insulating layer. The first insulating layer and the second conductive layer include an opening portion reaching the first conductive layer. The semiconductor layer is in contact with a sidewall of the opening portion. The semiconductor layer includes a first oxide layer and a second oxide layer. The first oxide layer includes a first region and a second region.

Abstract: A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

Abstract: A semiconductor device having excellent electrical characteristics is provided. The semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, an oxide semiconductor layer over the first insulating layer, a second conductive layer, a third conductive layer, and a second insulating layer over the oxide semiconductor layer, and a fourth conductive layer over the second insulating layer. The second conductive layer and the third conductive layer each contain tantalum and nitrogen. In each of the second conductive layer and the third conductive layer, the percentage of a first tantalum bonding state is lower than or equal to 3%, and the percentage of a second tantalum bonding state is higher than or equal to 5%.

Abstract: A kit for diagnosis of cancer, including a specific binding substance to a SPRY domain-containing SOCS box protein 2 (SPSB2) protein, a primer set for amplifying cDNA of an SPSB2 gene, or a probe that specifically hybridizes to mRNA of an SPSB2 gene, a kit for determining a prognosis of a patient with cancer, a method for determining a biological sample, a method for collecting data for determining whether or not a subject is affected by cancer, and a method for predicting a prognosis of a patient with cancer are provided.

Abstract: To measure an amount of abrasion of a polishing pad with a simple structure. A substrate processing apparatus 1000 includes: a table 100 for supporting a substrate WF with a surface to be polished facing upward; a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100; an elevating mechanism 260 for moving up and down the polishing pad 222 held to the pad holder 226; and an abrasion amount measurement member 270 configured to lower the polishing pad 222 by the elevating mechanism 260 and measure the amount of abrasion of the polishing pad 222 based on a value correlated with a behavior of the elevating mechanism 260 until the polishing pad contacts a reference surface.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

Abstract: The present invention has as its object the provision of an Fe-based amorphous alloy and Fe-based amorphous alloy ribbon excellent in soft magnetic properties having a low iron loss and a high saturation magnetic flux density. The Fe-based amorphous alloy excellent in soft magnetic properties of the present invention comprises, by atom %, B: 8.0% or more and 18.0% or less, Si: 2.0% or more and 9.0% or less, C: 0.10% or more and 5.00% or less, Al: 0.005% or more and 1.50% or less, P: 0% or more and less than 1.00%, Mn: 0% or more and 0.30% or less, Fe: 78.00% or more and 86.00% or less, and balance: impurities and has an amorphous structure.

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Abstract: A display apparatus includes: a display; a display driver that drives the display such that the display displays in accordance with display data; and a host controller that transfers update display data of one screen to the display driver. The display driver includes a light-emission controller that causes a self-luminous elements to emit light, and a memory that stores the update display data of the one screen. The display driver reads the update display data on the memory after an elapse of a predetermined period of time from a drive end time at which the display controller finishes driving in accordance with the update display data and drives the screen by using the read update display data. The display driver drives the self-luminous elements once or more at a timing when the update display data from the host controller to the display driver is not updated.

Abstract: An object of one embodiment of the present invention is to accurately derive an inclination of a line image sensor. One embodiment of the present invention is an image reading apparatus including: a line image sensor in which reading elements for reading an image are arrayed in a predetermined direction; a first derivation unit configured to, based on read data acquired by reading a chart on which a plurality of dot patterns is printed with the line image sensor, derive coordinates of each of the plurality of dot patterns; a second derivation unit configured to derive an inclination angle of the line image sensor based on the coordinates derived by the first derivation unit; and a first calculation unit configured to calculate a first correction value for correcting the inclination of the line image sensor based on the inclination angle derived by the second derivation unit.

Abstract: A polylactic acid resin composition includes a polylactic acid resin in an amount of 99% by mass or more. A complex viscosity ?*(20) of the polylactic acid resin composition is 2×103 Pa·s or higher. A ratio of the complex viscosity ?*(20) to a complex viscosity ?*(5), which is represented by [?*(20)/?*(5)], is 0.6 or higher. The complex viscosity ?*(5) and the complex viscosity ?*(20) are complex viscosities respectively measured 5 minutes and 20 minutes after the start of measurement using a parallel plate-type rotary viscometer under measurement conditions below: [Measurement Conditions] Parallel plates: 20 mm in diameter, made of aluminum; Temperature: 200° C.; Gap between the parallel plates: 1.00 mm; Frequency: 1 Hz (6.28 rad/s); Atmosphere: under dry air (dew point: ?60° C.); and Size of measurement sample: a strip that is 30 ?m thick, 7 mm wide, and 35 mm long.