Abstract: A compound is represented by the general formula (1). General formula (1); (In the formula (1), the A represents an n-valent organic group including a sulfur atom. The n represents an integer of 3 or more. The S represents a sulfur atom. The X represents a single bond or a carbonyl group. The Xs may be the same or different from each other. The R represents an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an araliphatic hydrocarbon group. The Rs may be the same or different from each other.

Abstract: Provided are a curable composition containing a compound having two or more thio(meth)acrylate groups and a compound represented by Formula (1), a cured product obtained by curing the curable composition, a molded body including the cured product, and an optical material including the molded body.

Abstract: Provided are a polyfunctional (meth)acrylate thioester composition containing a polyfunctional (meth)acrylate thioester compound represented by Formula (1), a curable composition containing the polyfunctional (meth)acrylate thioester composition, a cured product obtained by curing the curable composition, a molded body including the cured product, and an optical material including the molded body.

Abstract: There is provided a resin composition for a lens, which contains a photocationic polymerization initiator (X) including a salt formed from an anion represented by General Formula (1) and a cation and contains an epoxy compound (Y) containing two or more epoxy groups in a molecule. (In General Formula (1), R1 to R4 each independently represent an alkyl group having 1 to 18 carbon atoms or an aryl group having 6 to 14 carbon atoms.

Abstract: A polyamic acid varnish according to the present disclosure contains a polyamic acid. The monomers that constitute this polyamic acid include: a monomer (A) that has a C4-12 linear alkylene group but does not have an ester bond, an amide bond, or an ether bond; and a monomer (B) that is a monomer other than the monomer (A). The monomer (A) content is 15 to 70 mol % with respect to the total amount of the monomers that constitute the polyamic acid. The monomer (B) contains at least 90 mol % aromatic monomer.

Abstract: Post-translational modification, including protein methylation, plays an important role in regulating protein function. The present invention provides a novel assay for evaluating demethylase activity and the discovery of a family of protein demethylases comprising a novel demethylase motif.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: A vehicle seat is provided which includes a seat base detachably mounted on a vehicle floor, a seat cushion detachably provided on the seat base, and a backrest foldably supported on the seat base. The seat cushion is detached from the seat base, and the seat cushion and the seat base with the backrest folded are juxtaposed to be stored in a recess provided in the vehicle floor or an area under another seat. In the case of non-use, the vehicle seat can be removed from the vehicle floor to be efficiently stored inside a vehicle. A vehicle seat storing structure and a vehicle seat structure are also provided.

Abstract: Post-translational modification, including protein methylation, plays an important role in regulating protein function. The present invention provides a novel assay for evaluating demethylase activity and the discovery of a family of protein demethylases comprising a novel demethylase motif.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: A vehicle seat is provided which includes a seat base detachably mounted on a vehicle floor, a seat cushion detachably provided on the seat base, and a backrest foldably supported on the seat base. The seat cushion is detached from the seat base, and the seat cushion and the seat base with the backrest folded are juxtaposed to be stored in a recess provided in the vehicle floor or an area under another seat. In the case of non-use, the vehicle seat can be removed from the vehicle floor to be efficiently stored inside a vehicle. A vehicle seat storing structure and a vehicle seat structure are also provided.

Abstract: A vehicle seat is provided which includes a seat base detachably mounted on a vehicle floor, a seat cushion detachably provided on the seat base, and a backrest foldably supported on the seat base. The seat cushion is detached from the seat base, and the seat cushion and the seat base with the backrest folded are juxtaposed to be stored in a recess provided in the vehicle floor or an area under another seat. In the case of non-use, the vehicle seat can be removed from the vehicle floor to be efficiently stored inside a vehicle. A vehicle seat storing structure and a vehicle seat structure are also provided.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is disposed on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.

Abstract: A vehicle seat is provided which includes a seat base detachably mounted on a vehicle floor, a seat cushion detachably provided on the seat base, and a backrest foldably supported on the seat base. The seat cushion is detached from the seat base, and the seat cushion and the seat base with the backrest folded are juxtaposed to be stored in a recess provided in the vehicle floor or an area under another seat. In the case of non-use, the vehicle seat can be removed from the vehicle floor to be efficiently stored inside a vehicle. A vehicle seat storing structure and a vehicle seat structure are also provided.

Abstract: For enhancing the high performance of a non-volatile semiconductor memory device having an MONOS type transistor, a non-volatile semiconductor memory device is provided with MONOS type transistors having improved performance in which the memory cell of an MONOS non-volatile memory comprises a control transistor and a memory transistor. A control gate of the control transistor comprises an n-type polycrystal silicon film and is formed over a gate insulative film comprising a silicon oxide film. A memory gate of the memory transistor comprises an n-type polycrystal silicon film and is on one of the side walls of the control gate. The memory gate comprises a doped polycrystal silicon film with a sheet resistance lower than that of the control gate comprising a polycrystal silicon film formed by ion implantation of impurities to the undoped silicon film.