Abstract: A blower (100) blows inert gas. A crusher (200) repeats vitrifying plural kinds of inorganic compounds (A1) by mechanical energy and blowing up the plural kinds of vitrified inorganic compounds (A1) by the inert gas blown from the blower (100). At least some of the plural kinds of inorganic compounds (A1) blown up by the inert gas enter into a first collector (300). The first collector (300) returns the at least some of the plural kinds of inorganic compounds to the crusher (200). A system (S) (for example, a pipe (Pa), a buffer tank (110), a pipe (Pb), a pipe (Pc), and a pipe (Pi) described below) circulates the inert gas from the blower (100) through the crusher (200) and the first collector (300) to the blower (100).

Abstract: A method of producing an inorganic material (S10) according to the present invention includes a vitrification step (S12) of applying shearing stress and compressive stress to a mixed powder (MP) of a plurality of kinds of inorganic compound powders by using a ring ball mill mechanism (70) to vitrify at least a part of the mixed powder (MP); and a dispersion step (S13) of dispersing the vitrified mixed powder (MP) after the vitrification step (S12), where a combined step of the vitrification step (S12) and the dispersion step (S13) is performed a plurality of times to obtain a vitrified inorganic material powder from the mixed powder.

Abstract: A method for washing a semiconductor manufacturing apparatus component, the method comprising: a first process of disposing a semiconductor manufacturing apparatus component, to which a nitride semiconductor adheres, in a component holding portion inside a reaction tank of a washing apparatus; a second process of introducing a halogen-containing gas from a gas introducing pipe into the reaction tank to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component; a third process of trapping a reaction product generated by a reaction of the halogen-containing gas and the nitride semiconductor in a trapping unit; and a fourth process of discharging the reaction product trapped by the trapping unit from a gas discharging pipe to outside of the reaction tank.

Abstract: A semiconductor manufacturing apparatus component (101), to which a nitride semiconductor expressed by a general formula of AlxnyGa1-x-yN (provided that, x and y satisfy relationships of 0?x<1, 0?y<1, and 0?x+y<1) adheres, is disposed inside a washing apparatus (100) provided with a gas introducing pipe (104) and a gas discharging pipe (105). After the inside of the apparatus is set toa decompressed state, a halogen-containing gas is introduced from the gas introducing pipe (104) to set a pressure inside the apparatus to be equal to or more than 10 kPa and equal to or less than 90 kPa. Then, the halogen-containing gas is retained inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component (101).

Abstract: A semiconductor manufacturing apparatus component (101), to which a nitride semiconductor expressed by a general formula of AlxInyGa1-x-yN (provided that, x and y satisfy relationships of 0?x<1, 0?y<1, and 0?x+y<1) adheres, is disposed inside a washing apparatus (100) provided with a gas introducing pipe (104) and a gas discharging pipe (105). After the inside of the apparatus is set to a decompressed state, a halogen-containing gas is introduced from the gas introducing pipe (104) to set a pressure inside the apparatus to be equal to or more than 10 kPa and equal to or less than 90 kPa. Then, the halogen-containing gas is retained inside the apparatus to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component (101).