Patents by Inventor Yuichiro Irie
Yuichiro Irie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230187906Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.Type: ApplicationFiled: February 3, 2023Publication date: June 15, 2023Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
-
Patent number: 11605935Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.Type: GrantFiled: February 26, 2021Date of Patent: March 14, 2023Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
-
Patent number: 11581706Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.Type: GrantFiled: February 26, 2021Date of Patent: February 14, 2023Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
-
Publication number: 20210210929Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.Type: ApplicationFiled: February 26, 2021Publication date: July 8, 2021Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
-
Publication number: 20210184436Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.Type: ApplicationFiled: February 26, 2021Publication date: June 17, 2021Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
-
Patent number: 10938183Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.Type: GrantFiled: November 1, 2019Date of Patent: March 2, 2021Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura, Masaki Funabashi, Nobumasa Tanaka
-
Publication number: 20200067279Abstract: A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.Type: ApplicationFiled: November 1, 2019Publication date: February 27, 2020Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA, Masaki FUNABASHI, Nobumasa TANAKA
-
Patent number: 10511150Abstract: A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: July 6, 2018Date of Patent: December 17, 2019Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura, Masaki Funabashi, Nobumasa Tanaka
-
Publication number: 20180331503Abstract: A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: July 6, 2018Publication date: November 15, 2018Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA, Masaki FUNABASHI, Nobumasa TANAKA
-
Patent number: 10020638Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: March 9, 2017Date of Patent: July 10, 2018Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
-
Publication number: 20170187168Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: March 9, 2017Publication date: June 29, 2017Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
-
Patent number: 9601905Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: July 9, 2015Date of Patent: March 21, 2017Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
-
Publication number: 20150311676Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: July 9, 2015Publication date: October 29, 2015Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
-
Patent number: 9083150Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: GrantFiled: October 6, 2014Date of Patent: July 14, 2015Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji Yoshida, Hirokazu Itoh, Satoshi Irino, Yuichiro Irie, Taketsugu Sawamura
-
Publication number: 20150103858Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.Type: ApplicationFiled: October 6, 2014Publication date: April 16, 2015Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Junji YOSHIDA, Hirokazu ITOH, Satoshi IRINO, Yuichiro IRIE, Taketsugu SAWAMURA
-
Patent number: 7030422Abstract: A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a holder configured to receive a portion of the optical system, a base having a holder mounting member and a fastening member, and a bottom plate configured to support the base. The holder is mounted to the fastening member at a first joint position, and the fastening member is mounted to the holder mounting member at a second joint position, where the first and second joint positions are located at substantially a same distance from the bottom plate. Alternatively, the first and second joint positions are coplanar with an active layer of the diode.Type: GrantFiled: July 21, 2003Date of Patent: April 18, 2006Assignee: The Furukawa Electric Co., Ltd.Inventors: Jun Miyokawa, Yuichiro Irie, Etsuji Katayama, Kaoru Sekiguchi, Kiyokazu Tateno
-
Patent number: 7014371Abstract: The present invention is related to a laser diode module and a fabricating method therefor, which facilitates the fabrication of the laser diode module in a short time with a low manufacturing cost and high long term reliability. The laser diode module is formed by optically aligning a lens formed fiber disposed within a ferrule to a laser diode element. Ferrule fixing parts are utilized to hold the ferrule in place and are secured in position using a YAG laser welding process.Type: GrantFiled: June 20, 2003Date of Patent: March 21, 2006Assignee: The Furukawa Electric Co., Ltd.Inventors: Yuichiro Irie, Jun Miyokawa, Takeo Shimizu
-
Patent number: 6734517Abstract: A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a base configured to support the laser diode and at least a portion of the optical system, and a bottom plate configured to support the laser diode, the optical system, and the base. The optical system is configured to receive and transmit a beam emitted from the laser diode through the lens portion to the optical fiber along an optical axis. The base includes a structural support member configured to prevent warping of the base, where the structural support member extends along the base in a direction generally parallel to the optical axis.Type: GrantFiled: May 31, 2001Date of Patent: May 11, 2004Assignee: The Furukawa Electric Co., Ltd.Inventors: Jun Miyokawa, Yuichiro Irie, Etsuji Katayama, Kaoru Sekiguchi, Kiyokazu Tateno
-
Patent number: 6720582Abstract: A laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system, an optical system mounting member supporting at least a portion of the optical system, a laser diode mounting member, and a bottom plate supporting the laser diode, the optical system, the optical system mounting member, and the laser diode mounting member. The optical system receives and transmits a beam emitted from the laser diode through a lens portion to an optical fiber. The optical system mounting member is attached to the laser diode mounting member. The laser diode module preferably includes a thermo module having a first plate member attached to the laser diode mounting member.Type: GrantFiled: May 31, 2001Date of Patent: April 13, 2004Assignee: The Furukawa Electric Co., Ltd.Inventors: Jun Miyokawa, Yuichiro Irie, Etsuji Katayama, Kaoru Sekiguchi, Kiyokazu Tateno
-
Publication number: 20040033034Abstract: A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical system including an optical fiber and a lens portion, a holder configured to receive a portion of the optical system, a base having a holder mounting member and a fastening member, and a bottom plate configured to support the base. The holder is mounted to the fastening member at a first joint position, and the fastening member is mounted to the holder mounting member at a second joint position, where the first and second joint positions are located at substantially a same distance from the bottom plate. Alternatively, the first and second joint positions are coplanar with an active layer of the diode.Type: ApplicationFiled: July 21, 2003Publication date: February 19, 2004Applicant: THE FURUKAWA ELECTRIC CO., LTD.Inventors: Jun Miyokawa, Yuichiro Irie, Etsuji Katayama, Kaoru Sekiguchi, Kiyokazu Tateno