Abstract: To effectively reduce a low-frequency noise resulting from vibration of a peripheral wall of a ventilation path. The present invention provides a ventilation path with a soundproof structure including a ventilation path that includes an open end and a soundproof structure against a sound emitted from the ventilation path.

Abstract: To provide an air passage type silencer and an acoustic impedance change structure of which the absorbance is high, that suppresses generation of a wind noise, and that has a high sound attenuation effect in a low-frequency band. Provided is an acoustic impedance change structure through which a sound propagates, the acoustic impedance change structure including at least in this order: a first impedance matching region that is connected to an inlet portion and in which an acoustic impedance gradually decreases; an acoustic impedance constancy region; and an outlet portion, in which Zcham<Zin and Zcham<Zout are satisfied, where Zin is an acoustic impedance in the inlet portion, Zcham is an acoustic impedance in the acoustic impedance constancy region, and Zout is an acoustic impedance in the outlet portion, and a first terminal structure acoustically connected to the acoustic impedance constancy region is provided.

Abstract: To provide a silencing structure and a silencing system having a high sound absorbance in a low frequency region. A silencing structure that is installed in a tubular member, the silencing structure includes a cavity portion, an opening portion through which the cavity portion communicates with the tubular member, and a closing portion that closes the cavity portion at a position facing the opening portion, in which a cross-sectional area of the cavity portion on a side of the opening portion is larger than a cross-sectional area of the cavity portion on a side of the closing portion.

Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

Abstract: An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which at least one layer of the organic layer(s) contains a compound represented by the following formula, has low driving voltage and excellent durability. (X1 to X11 represent CR0 or N, and R0 represents a hydrogen atom or a substituent. Adjacent two of X1 to X11 each independently represent at least CR0, R0s of the adjacent two CR0s are bonded to each other to form a ring, and only one R0 of the adjacent two CR0s represents an aryl group or a heteroaryl group.

Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10?20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.

Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

Abstract: Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.

Abstract: This application relates, in part, to an organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which at least one layer of the organic layer(s) contains a compound represented by the following formula (1). The organic electroluminescent element has low driving voltage and excellent durability. wherein X1 to X11 represent CR0 or N, and R0 represents a hydrogen atom or a substituent. Adjacent two of X1 to X11 each independently represent at least CR0, R0s of the adjacent two CR0s are bonded to each other to form a ring, and only one R0 of the adjacent two CR0s represents an aryl group or a heteroaryl group.

Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.

Abstract: The antireflection film includes a dielectric multilayer film arranged on the substrate side and a fine uneven layer containing an alumina hydrate as a main component and provided to be laminated on the dielectric multilayer film. The dielectric multilayer film includes alternating layers of layers of high refractive index having a relatively high refractive index and layers of low refractive index having a relatively low refractive index, the dielectric multilayer film includes a barrier layer containing silicon nitride as one of the layer of high refractive index and the layer of low refractive index, and the barrier layer has a density of 2.7 g/cm3 or more and a thickness of 15 nm or more and 150 nm or less.

Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

Abstract: An organic electroluminescent element containing a light emitting material represented by the following general formula (1) and a host material represented by the general formula (H-1) in a light emitting layer. The organic electroluminescent element has low driving voltage, high luminous efficiency, and excellent durability. L represents O, NRC0, or CRC1RC2; RC0 to RC2 each represents a hydrogen atom or a substituent; RC3 to RC6 each represents a substituent; nC3 and nC6 each represents an integer of 0 to 3; nC4 and nC5 each represents an integer of 0 to 4; RH111 to RH118 each represents a hydrogen atom or a substituent; X represents any one of O, S, NRH119, CRH120RH121, and SiRH122RH123, and RH119 to RH123 each represents a substituent; the ring A represents a benzene ring; and the ring B represents a 5- or 6-membered ring.

Abstract: An organic electroluminescent element comprising a substrate; a pair of electrodes including an anode and a cathode, disposed on the substrate; and at least one organic layer including a light emitting layer, disposed between the electrodes, wherein the light emitting layer includes a compound represented by the following general formula: wherein: R1, R3, and R19; R11 to R18; and A1 to A4 are as defined in the specification.

Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10?20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.

Abstract: An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.

Abstract: Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

Abstract: A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.