Abstract: Provided is a method to recycle valuable materials included in a photovoltaic module having a resin back sheet or the like, for efficiently and easily recovering the valuable materials by removing the resin components from the photovoltaic module. The method of recovering valuable materials from a photovoltaic module, includes: a loading step of loading a photovoltaic module (X) having a resin back sheet and a sealing resin layer on a heat-resistant porous molded body (A) with the back sheet surface facing down; and a heating step of heating a load including the photovoltaic module (X) and the porous molded body (A) in a heating furnace in an oxidizing atmosphere to melt and then combust the resin components.

Abstract: Provided is a method to recycle valuable materials included in a photovoltaic module having a resin back sheet or the like, for efficiently and easily recovering the valuable materials by removing the resin components from the photovoltaic module. The method of recovering valuable materials from a photovoltaic module, includes: a loading step of loading a photovoltaic module (X) having a resin back sheet and a sealing resin layer on a heat-resistant porous molded body (A) with the back sheet surface facing down; and a heating step of heating a load including the photovoltaic module (X) and the porous molded body (A) in a heating furnace in an oxidizing atmosphere to melt and then combust the resin components.

Abstract: The present invention provides a process for producing a metalized substrate in which a predetermined metal paste composition is applied onto a sintered nitride ceramic substrate (10); the resultant is fired in a heat-resistant container at a predetermined condition; and the substrate (10) and a metal layer (30) are bonded together to each other through a titanium nitride layer (20).

Abstract: The present invention provides a process for producing a metalized substrate in which a predetermined metal paste composition is applied onto a sintered nitride ceramic substrate (10); the resultant is fired in a heat-resistant container at a predetermined condition; and the substrate (10) and a metal layer (30) are bonded together to each other through a titanium nitride layer (20).

Abstract: A sintered ceramics for mounting a light-emitting element, which is capable of realizing high optical reflectance over the entire region from ultraviolet radiation to visible light. The sintered ceramics has a light-reflective face of which reflectance to light in each wavelength in the range of 250 nm˜750 nm is 70% or more. The light-reflective face satisfies following reaction: |RA?RB|?20 when reflectance to light of 750 nm is defined as RA%, and reflectance to light of 300 nm is defined as RB. The sintered ceramics has not layer to be peeled from the light-reflective face when a Tape Peeling Test is carried out to the light-reflective face in accordance with the method described in JIS H8504 (1990).

Abstract: The present invention provides a method which enables to save the trouble to prepare alloys having required particular compositions responding to the purposes and to prepare solder ink made from the alloys, and which enables to produce various forms of solder pattern on the board by adjusting the composition freely at the point of printing. The method for forming a solder pattern on a board by ink jet printing comprises the step of injecting two or more kinds of respective metal pastes on a board independently, wherein a solder composition of a solder pattern to be formed is adjusted by the amount of injection of the respective metal pastes in the area that the metal pastes are injected thereto.

Abstract: A sintered aluminum nitride substrate which has a via hole and an internal electrically conductive layer, having high thermal conductivity and high adhesion strength between the sintered aluminum nitride substrate and the internal electrically conductive layer or the via hole and having other excellent properties. The substrate comprising an internal electrically conductive layer, at least one electrically conductive via hole formed between the internal electrically conductive layer and at least one surface of the substrate, wherein the thermal conductivity of the aluminum nitride sintering product at 25° C. is 190 W/mK or more, and the adhesion strength between the aluminum nitride sintering product and the internal electrically conductive layer is 5.0 kg/mm2 or more.

Abstract: The object of the present invention is to provide a sintered aluminum nitride substrate which has a via hole and an internal electrically conductive layer, having high thermal conductivity and high adhesion strength between the sintered aluminum nitride substrate and the internal electrically conductive layer or the via hole and having other excellent properties. The substrate according to the invention comprising an internal electrically conductive layer, at least one electrically conductive via hole formed between the internal electrically conductive layer and at least one surface of the substrate, wherein the thermal conductivity of the aluminum nitride sintering product at 25° C. is 190 W/mK or more, and the adhesion strength between the aluminum nitride sintering product and the internal electrically conductive layer is 5.0 kg/mm2 or more.

Abstract: The present invention produces the following substrate and the following process for producing the substrate. A substrate obtained by filling through holes in a sintered product of aluminum nitride with an electrically conducting layer, wherein said sintered product of aluminum nitride has a thermal conductivity of not smaller than 190 W/mK, and the adhesion strength between said sintered product of aluminum nitride and said electrically conducting layer is not smaller than 5.0 kg/mm2.

Abstract: The present invention prodices the following substrate and the following process for producing the substrate. A substrate obtained by filling through holes in a sintered product of aluminum nitride with an electrically conducting layer, wherein said sintered product of aluminum nitride has a thermal conductivity of not smaller than 190 W/mK, and the adhesion strength between said sintered product of aluminum nitride and said electrically conducting layer is not smaller than 5.0 kg/mm2.