Abstract: On the surface of a back board 30 are provided outermost-layer signal lines 6a, 6b, each having a length different form each other on the basis of the difference in length between connector lines 3a, 3b, and these outermost-layer signal lines are connected with the connector lines 3a, 3b, respectively. A digital signal “a” generated in the circuit of a daughter board 10 reaches a through hole 2a through an internal-layer signal line 1a traced within the internal layer of the daughter board 10, and is further transmitted to an internal-layer signal line 5a of the back board 30 through the connector line 3a, the outermost-layer signal line 6a, and a through hole 4a. The digital signal “a” is further transmitted to an internal-layer signal line “a” via a through hole 4a′, a connector line 3a′, and a through hole 2a′.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: In an electrical connector, a female terminal is inserted into a corresponding through-hole of a printed board, copper plating is divided into two copper plating parts having knife edge-like end portions, and land portion is also divided into two land parts having knife edge-like end portions. As a result, the copper plating parts are connected to two copper pattern parts through the separate land parts, respectively. The separate parts thus obtained form a signal portion and a ground portion, respectively. That is, the first copper plating part, the first land part, and the first copper pattern part constitute a signal portion, and the second copper plating part, the second land part, and the second copper pattern part constitute a ground portion.

Abstract: In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of: R/S=526·(d/S)2−0.037·(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6×10−7 to 16×10−7 inclusive.

Abstract: In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element.

Abstract: When each female terminal is inserted into a corresponding through-hole of a printed board, a copper plating is cut into two copper plating parts with knife edge-like end portions, and a land portion is also cut into two land parts with the knife edge-like end portions. As a result, the copper plating parts are connected to two copper pattern parts through the separate land parts, respectively. The separate parts thus obtained form a signal portion and a ground portion respectively. That is, the copper plating part, the land part and the copper pattern part constitute a signal portion whereas the copper plating part, the land part and the copper pattern part constitute a ground portion.

Abstract: Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.

Abstract: A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R.

Abstract: In relation to the magnetic head using a polycrystalline Mn-Zn ferrite as a core material, a magnetic head manufacturing method is provided for preventing the generation of the post-recording noise which is a pulse noise generated immediately after the completion of a current flow through the recording and reproducing coil. A fused core block is manufactured using Mn-Zn ferrite having a mean crystal grain size of equal to or less than 30 .mu.m as the core material of at least the recording and reproducing head and glass fusion using one type of glass, and the fused core block is annealed at a temperature equal to or higher than the strain point of the glass.

Abstract: A composite magnetic head having a head chip including an erasing core, a recording/reproducing core and a center core disposed between the erasing core and the recording/reproducing core. The erasing core is joined to the center core via a first nonmagnetic material which forms an erasing gap, and the recording/reproducing core is joined to the center core via a second nonmagnetic material which forms a recording/reproducing gap. The composite magnetic head has an erasing coil, a recording/reproducing coil, a first back bar for magnetically coupling the erasing core with the center core, and a second back bar for magnetically coupling the recording/reproducing core with the center core. The composite magnetic head satisfies both of following conditional expressions:H.ltoreq.0.058+8.6.times.L.sub.g (expression 1)H.ltoreq.0.418+5.9.times.L.sub.g (expression 2)where L.sub.

Abstract: A multiple head arrangement for recording and reproducing magnetic information on a magnetic recording medium. The head structure includes an I core body and two core half bodies. A first glass member is interposed between the I core body and the first core half body at a position laterally adjacent a first read/write gap and a second glass member is interposed between the I core body and the second core half body at a position laterally adjacent a second read/write gap. A non-magnetic thin film insulation layer is interposed between the first and second core half bodies and substantially perpendicularly with respect to the read/write gaps.