Abstract: A method of manufacturing high purity hafnium is provided and includes the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material.

Abstract: An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target. In order to achieve the foregoing object, the present invention provides a high-purity Ru alloy target, wherein the content of the platinum group elements excluding Ru is 15 to 200 and remnants are Ru and inevitable impurities.

Abstract: Provided is ultrahigh purity copper having a hardness of 40 Hv or less, and a purity of 8N or higher (provided that this excludes the gas components of O, C, N, H, S and P). With this ultrahigh purity copper, the respective elements of O, S and P as gas components are 1 wtppm or less. Also provided is a manufacturing method of ultrahigh purity copper based on two-step electrolysis using an electrolytic solution comprised of copper nitrate solution, including the procedures of adding hydrochloric acid in an electrolytic solution comprised of copper nitrate solution; circulating the electrolytic solution; and performing two-step electrolysis while eliminating impurities with a filter upon temporarily setting the circulating electrolytic solution to a temperature of 10° C. or less. The present invention provides a copper material that is compatible with the thinning (wire drawing) of the above, and is capable of efficiently manufacturing ultrahigh purity copper having a purity of 8N (99.

Abstract: Provided is a method of manufacturing high-purity hafnium by using a hafnium sponge with reduced zirconium as the raw material in which the impurity content of Fe, Cr, and Ni, the impurity content of Ca, Na, and K, the impurity content of Al, Co, Cu, Ti, W, and Zn, the alpha dose, the impurity content of U and Th, the impurity content of Pb and Bi, and the content of C as a gas component contained in the hafnium are reduced. Based on this efficient and stable manufacturing technology, additionally provided are a high-purity hafnium material obtained from the foregoing high-purity hafnium, as well as a sputtering target, a gate insulation film and a metal gate thin film, which are formed from this material. This high-purity hafnium has a purity 6N or higher except Zr and gas components, wherein Fe, Cr and Ni are respectively 0.2 ppm or less, Ca, Na and K are respectively 0.1 ppm or less, and Al, Co, Cu, Ti, W and Zn are respectively 0.1 ppm or less.

Abstract: A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.

Abstract: A method of manufacturing high purity hafnium is provided and includes the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material.

Abstract: Provided is high purity tin or tin alloy wherein the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher (provided that this excludes the gas components of O, C, N, H, S and P). This high purity tin or tin alloy is characterized in that the ? ray count of high purity tin having a cast structure is 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and are of large capacity, there is considerable risk of a soft error occurring due to the influence of the ? ray from materials in the vicinity of the semiconductor chip. In particular, there are strong demands for purifying the soldering material or tin to be used in the vicinity of semiconductor devices, as well as for materials with fewer ? rays. Thus, the present invention aims to provide high purity tin or tin alloy and the manufacturing method of such high purity tin by reducing the ? dose of tin so as to be adaptable as the foregoing material.

Abstract: Provided is a manufacturing method of high purity oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with an alkaline solution to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide. Provided are high purity zinc oxide efficiently freed of impurities, in particular C, Cl, S and Pb impurities, at low cost and the manufacturing method thereof; a target manufactured by firing the high purity zinc oxide; and a high purity zinc oxide thin film obtained by the sputtering the target.

Abstract: In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, a zirconium crucible is provided for melting an analytical sample and is capable of inhibiting the inclusion of impurities from the crucible by using a high-purity crucible, improving the durability of high-purity zirconium as an expensive crucible material, and increasing the number of times that the zirconium crucible can be used. With this zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, the purity excluding gas components is 3N or higher, and the content of carbon as a gas component is 100 mass ppm or less.

Abstract: The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less.

Abstract: Upon performing electrolysis with a solution containing nickel as the electrolytic solution, anolyte is adjusted to pH 2 to 5; impurities such as iron, cobalt and copper contained in the anolyte are eliminated by combining any one or two or more of the methods among adding an oxidizing agent and precipitating and eliminating the impurities as hydroxide, eliminating the impurities through preliminary electrolysis, or adding Ni foil and eliminating the impurities through displacement reaction; impurities are thereafter further eliminated with a filter; and the impurity-free solution is employed as catholyte to perform the electrolysis. The present invention relates to a simple method of performing electrolytic refining employing a solution containing nickel from nickel raw material containing a substantial amount of impurities, and provides technology on efficiently manufacturing high purity nickel having a purity of 5N (99.999 wt %) or more.

Abstract: Upon performing electrolysis with a solution containing nickel as the electrolytic solution, anolyte is adjusted to pH 2 to 5; impurities such as iron, cobalt and copper contained in the anolyte are eliminated by combining any one or two or more of the methods among adding an oxidizing agent and precipitating and eliminating the impurities as hydroxide, eliminating the impurities through preliminary electrolysis, or adding Ni foil and eliminating the impurities through displacement reaction; impurities are thereafter further eliminated with a filter; and the impurity-free solution is employed as catholyte to perform the electrolysis. The present invention relates to a simple method of performing electrolytic refining employing a solution containing nickel from nickel raw material containing a substantial amount of impurities, and provides technology on efficiently manufacturing high purity nickel having a purity of 5N (99.999 wt %) or more.

Abstract: Ultrahigh purity copper having a residual resistance ratio of 38,000 or greater and a purity of 8N or higher (excluding gas components of O, C, N, H, S and P), and in particular ultrahigh purity copper wherein the respective elements of O, C, N, H, S and P as gas components are 1 ppm or less.

Abstract: A high purity ZrB2 powder having a purity of 99.9 wt % or higher excluding C and gas components, and a manufacturing method of such high purity ZrB2 powder, including the steps of: subjecting a Zr sponge raw material to electron beam melting and casting to prepare an ingot having a purity of 99.9 wt % or higher; cutting the ingot into a cut powder and hydrogenating the cut powder into ZrH2; pulverizing and dehydrogenating the resultant product into a Zr powder and oxidizing the Zr powder at a high temperature in an oxygen atmosphere into a ZrO2 fine powder; and mixing the ZrO2 fine powder with B having a purity of 99.9 wt % or higher so as to reduce ZrO2 and obtain a ZrB2 powder having a purity of 99.9 wt % or higher. Purity of the ZrB2 powder for use in sintering is made to be 99.

Abstract: A high purity Ru powder wherein the content of the respective alkali metal elements such as Na and K is 10 wtppm or less, and the content of Al is in the range of 1 to 50 wtppm. Further provided is a manufacturing method of such high purity Ru powder wherein Ru raw material having a purity of 3N (99.9%) or less is used as an anode and electrolytic refining is performed in a solution. Further still, provided is a high purity Ru powder for manufacturing a sputtering target which is capable of reducing harmful substances as much as possible, generates few particles during deposition, has a uniform film thickness distribution, has a purity of 4N (99.99%) or higher, and is suitable in forming a capacitor electrode material of a semiconductor memory; a sputtering target obtained by sintering such high purity Ru powder; a thin film obtained by sputtering this target; and a manufacturing method of the foregoing high purity Ru powder.

Abstract: Provided is a manufacturing method of high purity oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with an alkaline solution to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide. Provided are high purity zinc oxide efficiently freed of impurities, in particular C, Cl, S and Pb impurities, at low cost and the manufacturing method thereof; a target manufactured by firing the high purity zinc oxide; and a high purity zinc oxide thin film obtained by the sputtering the target.

Abstract: The present invention provides a Ni—Pt alloy superior in workability containing Pt in a content of 0.1 to 20 wt % and having a Vickers hardness of 40 to 90, and a target comprising the Ni—Pt alloy. The present invention also provides a manufacturing method of Ni—Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities through filtration with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt.

Abstract: The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is ±1.0 at % or less.

Abstract: Provided are high purity copper sulfate wherein the content of Ag impurities is 1 wtppm or less, and having a purity of 99.99 wt % or higher, and a manufacturing method of high purity copper sulfate including the steps of dissolving crude copper sulfate crystals or copper metal, and subjecting this to active carbon treatment or solvent extraction and active carbon treatment in order to realize recrystallization. The present invention aims to provide a manufacturing method of high purity copper sulfate capable of efficiently removing impurities at a low cost by dissolving commercially available copper sulfate crystals in purified water or acid and thereafter subjecting this to the refining process, and high purity copper sulfate obtained thereby.

Abstract: Provided is a manufacturing method of high purity hafnium including the steps of making aqueous solution of chloride of hafnium, thereafter removing zirconium therefrom via solvent extraction, performing neutralization treatment to obtain hafnium oxide, further performing chlorination to obtain hafnium chloride, obtaining hafnium sponge via reducing said hafnium chloride, and performing electron beam melting to the hafnium sponge in order to obtain a hafnium ingot, as well as a high purity hafnium material obtained thereby and a target and thin film formed from such material. The present invention relates to a high purity hafnium material with reduced zirconium content contained in the hafnium, a target and thin film formed from such material, and the manufacturing method thereof, and provides efficient and stable manufacturing technology, a high purity hafnium material obtained according to such manufacturing technology, and a target and high purity hafnium thin film formed from such material.