Abstract: There are provided a sample conveyance system and a sample conveyance method capable of conveying a sample in a more stable manner than in the related art corresponding to a conveyance method using an electromagnetic actuator. A driving unit 208 applies a first voltage to a first coil 207a located on a front side in a traveling direction of a holder 202, which is selected to attract or repel the holder 202, to excite the first coil 207a and applies a second voltage having a polarity opposite to a polarity of the first voltage to at least one or more of second coils 207b among coils 207 adjacent to the first coil 207a except for the coils 207 in the front side in the traveling direction to excite the second coil 207b, and a control unit 210A estimates a position of the holder 202 based on a value of a current flowing through a winding 206 of the first coil 207a.

Abstract: A bonding sheet (X) of the present invention includes a matrix resin, a plurality of solder particles, and a plurality of flux particles, and has a sheet thickness T. In the bonding sheet (X), a particle size D50 of the solder particles is 12 ?m or less, a particle size D50 of the flux particles is 30 ?m or less, and a ratio of a particle size D90 of the solder particles and a particle size D90 of the flux particles to the sheet thickness T is 0.95 or less.

Abstract: A laminated body comprising a dicing sheet and a semiconductor backside protective film, in which the dicing sheet comprises a base layer and an adhesive layer arranged over the base layer, the semiconductor backside protective film is arranged over the adhesive layer, the dicing sheet is provided with a property such that application of heat thereto causes contraction thereof, and with a property such that heat treatment thereof for one minute at 100° C. causes a second length in an MD direction following heat treatment to be not greater than 95% when expressed as a percentage such that a first length in the MD direction prior to heat treatment is taken to be 100%.

Abstract: Provided is an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, and related methods of manufacturing a semiconductor device, and semiconductor devices. Provided is an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 ?m or more and 260 ?m or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 ?m or more and 200 ?m or less.

Abstract: The present invention provides a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element and that enables loading of the other semiconductor element and improvement in the manufacturing yield of a semiconductor device by preventing deformation and cutting of the bonding wire, and a dicing die bond film. The die bond film of the present invention is a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element, in which at least a first adhesive layer that enables a portion of the bonding wire to pass through inside thereof by burying the portion upon press bonding and a second adhesive layer that prevents the other semiconductor element from contacting with the bonding wire are laminated.

Abstract: The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.

Abstract: Provided is a method for production of a sealed body which is capable of improving workability and reducing costs owing to resin-sealing in which a mold is not used, while an electronic instrument obtained has no performance failure and the like.

Abstract: The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T2/T1 is 0.04 or more, wherein T1 is the light transmittance of the portion where the dicing film and the protecting film are laminated and T2 is the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.

Abstract: The present invention aims to provide an adhesive film that enables manufacturing of a high quality semiconductor device with good yield ratio, a method of manufacturing a semiconductor device using the same, and a semiconductor device obtained by the manufacturing method. This object is achieved by an adhesive film for embedding a first semiconductor element fixed to an adherend and fixing a second semiconductor element that is different from the first semiconductor element to the adherend, wherein the adhesive film has a thickness T that is larger than a thickness T1 of the first semiconductor element, and the adherend and the first semiconductor element are connected by wire bonding and a difference between the thickness T and the thickness T1 is 40 ?m or more and 260 ?m or less, or the adherend and the first semiconductor element are connected by flip-chip bonding and a difference between the thickness T and the thickness T1 is 10 ?m or more and 200 ?m or less.

Abstract: The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.

Abstract: The present invention provides a dicing film with a protecting film that enables to paste a dicing film to a semiconductor wafer without a shift in position while reducing a downtime. There is provided a dicing film with a protecting film in which a dicing film and a protecting film are laminated, wherein the difference between the transmittance of the protecting film and the transmittance of the dicing film with a protecting film at a portion of the dicing film where light for detecting a film transmits first is 20% or more in a wavelength of 600 to 700 nm.

Abstract: The present invention aims to provides a method of manufacturing a film for a semiconductor device in which a dicing film, a die bond film, and a protecting film are laminated in this order, including the steps of: irradiating the die bond film with a light ray having a wavelength of 400 to 800 nm to detect the position of the die bond film based on the obtained light transmittance and punching the dicing film out based on the detected position of the die bond film, and in which T2/T1 is 0.04 or more, wherein T1 is the light transmittance of the portion where the dicing film and the protecting film are laminated and T2 is the light transmittance of the portion where the dicing film, the die bond film, and the protecting film are laminated.

Abstract: A dicing die-bonding film with excellent peeling property when a diced semiconductor chip and its die-bonding film are, without deteriorating a holding force during dicing a semiconductor wafer even if it is thin. A dicing die-bonding film, comprising a dicing film having at least a pressure-sensitive adhesive layer formed on a supporting base material, and a die-bonding film formed on the pressure-sensitive adhesive layer, wherein the thickness of the pressure-sensitive adhesive layer is 5 to 80 ?m, and when the dicing film is peeled off from the die-bonding film after dicing from the side of the die-bonding film to a part of the pressure-sensitive adhesive layer, the maximum value of a peeling force in the vicinity of the cut surface is 0.7 N/10 mm or less under the conditions of a temperature of 23° C., a peeling angle of 180°, and a peeling point moving rate of 10 mm/min.

Abstract: The present invention provides a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element and that enables loading of the other semiconductor element and improvement in the manufacturing yield of a semiconductor device by preventing deformation and cutting of the bonding wire, and a dicing die bond film. The die bond film of the present invention is a die bond film for adhering, onto a semiconductor element that is electrically connected to an adherend with a bonding wire, another semiconductor element, in which at least a first adhesive layer that enables a portion of the bonding wire to pass through inside thereof by burying the portion upon press bonding and a second adhesive layer that prevents the other semiconductor element from contacting with the bonding wire are laminated.

Abstract: Provided is an adhesive composition into which an additive for capturing a cation is incorporated, thereby making it possible to form a semiconductor-device-producing adhesive sheet capable of preventing deterioration of the electrical characteristic of a produced semiconductor device so as to improve the product reliability of the device. An adhesive composition, for producing a semiconductor device, which contains at least an additive for capturing a cation.

Abstract: An object thereof is to provide a thermosetting die-bonding film that is capable of preventing warping of an adherend by suppressing curing contraction of the film after die bonding, and a dicing die-bonding film. The present invention relates to a thermosetting die-bonding film for adhering and fixing a semiconductor element onto an adherend, wherein the gel fraction in an organic component after thermal curing is performed by a heat treatment at 120° C. for 1 hour is 20% by weight or less, and the gel fraction in the organic component after thermal curing is performed by a heat treatment at 175° C. for 1 hour is in a range of 10 to 30% by weight.

Abstract: An object of the present invention is to provide a thermosetting die-bonding film that is capable of preventing warping of an adherend by suppressing curing contraction of the film after die bonding, and a dicing die-bonding film. The present invention relates to a thermosetting die-bonding film for adhering and fixing a semiconductor element onto an adherend, comprising at least an epoxy resin and a phenol resin as a thermosetting component, wherein the ratio of the number of moles of epoxy groups to the number of moles of phenolic hydroxyl groups in the thermosetting component is in a range of 1.5 to 6.