Patents by Inventor Yuichiro Sssaki

Yuichiro Sssaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING SYSTEM
    Publication number: 20110151652
    Abstract: An impurity is introduced into a fin-type semiconductor region (102) formed on a substrate (100) using a plasma doping process, thereby forming an impurity-introduced layer (105). Carbon is introduced into the fin-type semiconductor region (102) using a plasma doping process to overlap at least a part of the impurity-introduced layer (105), thereby forming a carbon-introduced layer.
    Type: Application
    Filed: March 26, 2010
    Publication date: June 23, 2011
    Inventors: Yuichiro Sssaki, Katsumi Okashita, Bunji Mizuno