Patents by Inventor Yuichiro Uchihama

Yuichiro Uchihama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate processing method and substrate processing apparatus
    Patent number: 6730620
    Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: May 4, 2004
    Assignee: Tokyo Electron Limited
    Inventors: Kei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima
  • Substrate processing method and substrate processing apparatus
    Publication number: 20020119678
    Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.
    Type: Application
    Filed: April 30, 2002
    Publication date: August 29, 2002
    Inventors: Kei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima
  • Substrate processing method and substrate processing apparatus
    Patent number: 6413317
    Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.
    Type: Grant
    Filed: September 13, 2000
    Date of Patent: July 2, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Kei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima