Abstract: A method of manufacturing a semiconductor device for patterning a semiconductor substrate by photolithography, the semiconductor substrate having a transparent or semitransparent layer having a high transmissivity at an exposure wavelength .lambda., and the transparent or semitransparent layer being formed on an underlying structure with a surface having a high reflectivity at the exposure wavelength .lambda.. The method comprises the steps of: forming a resist layer having a refractive index n.sub.r and a thickness d.sub.r on the transparent or semitransparent layer; forming a top antireflection film having a refractive index n.sub.a and a thickness d.sub.a on the resist layer; selectively exposing the resist layer via the top antireflection film with light having the exposure wavelength .lambda.; removing the top antireflection film; and developing a latent image in the resist layer to form a resist pattern, wherein an optical thickness n.sub.a d.sub.

Abstract: A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Abstract: A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Abstract: A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask patterns layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Abstract: A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.