Abstract: The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, in which the polishing agent has a pH of 7 or less.

Abstract: The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble organic polymer having at least one selected from a carboxylic acid group and a salt of carboxylic acid; a water-soluble polyamide having at least one selected from a tertiary amino group and an oxyalkylene chain in a molecule thereof; and water, in which the polishing agent has a pH of 7 or less.

Abstract: A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I?) between a value I of an absorbance of 3566 cm?1 and a value I? of an absorbance of 3695 cm?1, and a crystallite diameter XS, is 0.08 or less. A=(I/I?)/XS A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a?) and a lattice constant (a) measured by powder X-ray diffraction, is ?0.16% or more.

Abstract: A first polishing agent contains: cerium oxide particles; and water, wherein, in IR spectrum of the cerium oxide particle, a value A found by a formula below from a ratio (I/I?) between a value I of an absorbance of 3566 cm?1 and a value I? of an absorbance of 3695 cm?1, and a crystallite diameter XS, is 0.08 or less. A=(I/I?)/XS A second polishing agent contains: cerium oxide particles; and water, wherein, in the cerium oxide particle, a deviation B of a lattice constant found by a formula below from a theoretical lattice constant (a?) and a lattice constant (a) measured by powder X-ray diffraction, is ?0.16% or more.

Abstract: There are provided a manufacturing method of a polishing agent capable of suppressing occurrence of a polishing defect to a surface to be polished and of performing CMP at a high polishing speed, and a polishing method. The manufacturing method of the polishing agent is a manufacturing method including injecting a slurry containing cerium oxide particles and water at a predetermined injecting pressure and colliding the injected slurry against the slurry each other or against a rigid body with a modified Mohs hardness of 8 or more so that a rate of change of an average primary particle diameter of the cerium oxide particles before and after collision may become within 20%.

Abstract: There are provided a manufacturing method of a polishing agent capable of suppressing occurrence of a polishing defect to a surface to be polished and of performing CMP at a high polishing speed, and a polishing method. The manufacturing method of the polishing agent is a manufacturing method including heating cerium oxide particles obtained by liquid phase synthesis or a slurry containing the cerium oxide particles and water at 90° C. or more to 1000° C. or less.

Abstract: The present invention relates to an additive for a polishing agent, which is capable of suppressing a decrease in polishing characteristics of a polishing agent to be repeatedly used, particularly a removal rate, by adding the additive to the polishing agent as needed during repeated uses. The invention also relates to a polishing method using a polishing agent to be repeatedly used, which is capable of suppressing a decrease in polishing characteristics of the polishing agent, particularly a removal rate.