Abstract: An A/D conversion device includes a phase-difference clock generation unit configured to use a plurality of phase interpolators to generate multi-phase clock signals, of which phases are shifted with respect to an input clock signal, from the input clock signal and a signal obtained by delaying the input clock signal; and an A/D conversion unit configured to perform A/D conversion on an input analog signal using the multi-phase clock signals generated by the phase-difference clock generation unit.

Abstract: An A/D conversion device includes a phase-difference clock generation unit configured to use a plurality of phase interpolators to generate multi-phase clock signals, of which phases are shifted with respect to an input clock signal, from the input clock signal and a signal obtained by delaying the input clock signal; and an A/D conversion unit configured to perform A/D conversion on an input analog signal using the multi-phase clock signals generated by the phase-difference clock generation unit.

Abstract: An A/D conversion device includes a phase-difference clock generation unit configured to use a plurality of phase interpolators to generate multi-phase clock signals, of which phases are shifted with respect to an input clock signal, from the input clock signal and a signal obtained by delaying the input clock signal; and an A/D conversion unit configured to perform A/D conversion on an input analog signal using the multi-phase clock signals generated by the phase-difference clock generation unit.

Abstract: The present disclosure relates to a solid-state image sensor capable of suppressing deterioration of the noise characteristics and the dark characteristics when capturing an image of radiation, a manufacturing method, and a radiation imaging device. A scintillator converts radiation to visible light. Pixels each including a photodiode are formed in a semiconductor substrate. The photodiode photoelectrically converts the visible light that has been converted by the scintillator. Only a silicon oxide film or a negative fixed charge film is formed on the substrate in an element isolation area of the pixel. The present disclosure can be applied to, for example, a radiation imaging device that captures an image of an X-ray with which an object is irradiated.

Abstract: An A/D conversion device includes a phase-difference clock generation unit configured to use a plurality of phase interpolators to generate multi-phase clock signals, of which phases are shifted with respect to an input clock signal, from the input clock signal and a signal obtained by delaying the input clock signal; and an A/D conversion unit configured to perform A/D conversion on an input analog signal using the multi-phase clock signals generated by the phase-difference clock generation unit.