Abstract: A developing device includes a developing member to carry developer stored by a developing frame, and a regulating blade having a support plate fixed to the developing frame, a plate-like member, and a regulating member. One end portion of the plate-like member is opposed to the developing member, and the other end portion is welded to the support plate. The regulating member is fixed to a plate-like member surface, and contacts the developing member to regulate a developer thickness on a developing surface. The regulating member is provided with a recessed portion recessed at a regulating member end portion. The regulating member end portion is lower than a regulating member central portion. A plate-like member region welded to the support plate is located at the plate-like member other end portion and overlaps the regulating member central portion and the regulating member end portion at which the recessed portion is provided.

Abstract: Provided is an alumina ceramic with a low secondary electron emission coefficient and suitable for components of a high frequency generator, a plasma generator and so on. The alumina ceramic contains alumina as a main component, and at least two kinds of elements selected from an alkaline earth metal and from an element belonging to period 3, 4 or 5. The alkaline earth metal and the element belonging to period 3, 4 or 5 have a higher first ionization energy than aluminum. An electronegativity difference between the alkaline earth metal and the element belonging to period 3, 4 or 5 is 0 or more and 0.6 or less. A ratio (x/y) of the grain boundary area (x) to the grain area (y) in the alumina ceramic is 0.0001 to 0.001.

Abstract: An alumina sintered body having a low dielectric loss tangent and a method for manufacturing the alumina sintered body are provided. An alumina sintered body contains Al2O3 99.50 mass % or more, and 99.95 mass % or less and sodium and silicon, wherein at a surface layer A in any given cross-section and a central portion B of the cross-section in a depth direction from the surface layer A, a concentration ratio of sodium to silicon in the surface layer A is smaller than the concentration ratio of sodium to silicon at the central portion B.

Abstract: Provided is an alumina ceramic with a low secondary electron emission coefficient and suitable for components of a high frequency generator, a plasma generator and so on. The alumina ceramic contains alumina as a main component, and at least two kinds of elements selected from an alkaline earth metal and from an element belonging to period 3, 4 or 5. The alkaline earth metal and the element belonging to period 3, 4 or 5 have a higher first ionization energy than aluminum. An electronegativity difference between the alkaline earth metal and the element belonging to period 3, 4 or 5 is 0 or more and 0.6 or less. A ratio (x/y) of the grain boundary area (x) to the grain area (y) in the alumina ceramic is 0.0001 to 0.001.

Abstract: Provided is a silica glass member which exhibits high optical transparency to vacuum ultraviolet light and has a low thermal expansion coefficient of 4.0×10?7/K or less at near room temperature, particularly a silica glass member which is suitable as a photomask substrate to be used in a double patterning exposure process using an ArF excimer laser (193 nm) as a light source. The silica glass member is used in a photolithography process using a vacuum ultraviolet light source, in which the fluorine concentration is 1 wt % or more and 5 wt % or less, and the thermal expansion coefficient at from 20° C. to 50° C. is 4.0×10?7/K or less.

Abstract: Provided is a silica glass member which exhibits high optical transparency to vacuum ultraviolet light and has a low thermal expansion coefficient of 4.0?10?7/K or less at near room temperature, particularly a silica glass member which is suitable as a photomask substrate to be used in a double patterning exposure process using an ArF excimer laser (193 nm) as a light source. The silica glass member is used in a photolithography process using a vacuum ultraviolet light source, in which the fluorine concentration is 1 wt % or more and 5 wt % or less, and the thermal expansion coefficient at from 20° C. to 50° C. is 4.0×10?7/K or less.

Abstract: A driving apparatus (101) is provided with: a first base part (110); a second base part (120); an elastic part (210) configured to couple the first base part with the second base part; and a driven part (400) supported by the second base part in a drivable aspect. According to such a driving apparatus, for example, if a driving force is applied to the first base part, the driving force is transmitted to the second base part via the elastic part. Thus, the driven part supported by the second base part can be preferably driven.

Abstract: The invention provides a method for efficiently manufacturing a synthetic silica glass substrate for photomasks excellent in light stability and capable of being applied to ArF-Wet photolithography with maximum birefringence of 1.4 nm/cm or less, homogeneity of diffractive index of 2×10?5 or less and an average content of hydrogen atoms of 1018 to 1019, comprising the steps of: forming a mask-plain substrate by slicing a block of a synthetic silica glass; heating each sheet of the mask-plain substrate at a temperature of 1100° C. or more; slowly cooling the substrate at a cooling rate of 0.01 to 0.8° C./min; and placing the substrate in a hydrogen gas atmosphere at least at the latter half of the slow cooling step or after the slow cooling step.