Patents by Inventor Yuji Hayasaka

Yuji Hayasaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6649082
    Abstract: The present invention intends to provide an agent and a method for removing harmful gas, which exhibits high harm-removing ability per unit volume for harmful halogen-containing gas contained in the exhaust gas from the etching or cleaning step in the manufacturing process of a semiconductor device, and which is inexpensive. The invention is characterized by that halogen-containing gas is removed using a harm-removing agent comprising a specific iron oxide, an alkaline earth metal compound and activated carbon in the specific amount. In the case where the exhaust gas contains halogen gas such as chlorine or a gas such as sulfur dioxide, the gas is rendered harmless by using in combination a harm-removing agent comprising activated carbon or zeolite.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: November 18, 2003
    Assignee: Showa Denko K.K.
    Inventors: Yuji Hayasaka, Hitoshi Atobe, Yoshio Furuse
  • Patent number: 6630421
    Abstract: A reactive agent for decomposing fluorine compounds comprising alumina and an alkaline earth metal compound; a process for decomposing fluorine compounds, comprising contacting the reactive agent with a fluorine compound at a temperature of 200° C. or more; and a process for manufacturing a semiconductor device, comprising an etching or cleaning and a decomposing using the reactive agent.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: October 7, 2003
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Hitoshi Atobe, Toraichi Kaneko, Yuji Hayasaka, Shinichi Yano
  • Patent number: 6563011
    Abstract: A reactive agent for decomposing fluorine compounds comprising alumina and an alkaline earth metal compound; a process for decomposing fluorine compounds, comprising contacting the reactive agent with a fluorine compound at a temperature of 200° C. or more; and a process for manufacturing a semiconductor device, comprising an etching or cleaning and a decomposing using the reactive agent.
    Type: Grant
    Filed: September 21, 2001
    Date of Patent: May 13, 2003
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Hitoshi Atobe, Toraichi Kaneko, Yuji Hayasaka, Shinichi Yano
  • Publication number: 20030082918
    Abstract: The present invention intends to provide an agent and a method for removing harmful gas, which exhibits high harm-removing ability per unit volume for harmful halogen-containing gas contained in the exhaust gas from the etching or cleaning step in the manufacturing process of a semiconductor device, and which is inexpensive.
    Type: Application
    Filed: January 9, 2002
    Publication date: May 1, 2003
    Inventors: Yuji Hayasaka, Hitoshi Atobe, Yoshio Furuse
  • Publication number: 20020032358
    Abstract: A reactive agent for decomposing fluorine compounds comprising alumina and an alkaline earth metal compound; a process for decomposing fluorine compounds, comprising contacting the reactive agent with a fluorine compound at a temperature of 200° C. or more; and a process for manufacturing a semiconductor device, comprising an etching or cleaning and a decomposing using the reactive agent.
    Type: Application
    Filed: September 21, 2001
    Publication date: March 14, 2002
    Applicant: SHOWA DENKO K.K.
    Inventors: Hitoshi Atobe, Toraichi Kaneko, Yuji Hayasaka, Shinichi Yano