Patents by Inventor Yuji Hiroyuki

Yuji Hiroyuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7960727
    Abstract: There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0?x<1). The principal plane of the substrate is a plane in which an A plane {11-20} or an M plane {10-10} is inclined in a direction of ?c axis.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: June 14, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Ken Nakahara, Yuji Hiroyuki
  • Publication number: 20090267062
    Abstract: There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0?x<1). The principal plane of the substrate is a plane in which an A plane {11-20} or an M plane {10-10} is inclined in a direction of ?c axis.
    Type: Application
    Filed: September 21, 2006
    Publication date: October 29, 2009
    Inventors: Ken Nakahara, Yuji Hiroyuki