Abstract: A method for producing a single crystals by preferential epitaxial growth of {100} face, comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100}face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. A method for producing a single-crystal diamond using a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is part from the outer peripheral portion of the holder, and has a recessed shape. The methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.

Abstract: The present invention provides a method for producing a single crystals by preferential epitaxial growth of {100} face, the method comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100} face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. The present invention further provides a method for producing a single-crystal diamond wherein used is a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is apart from the outer peripheral portion of the holder, and has a recessed shape.

Abstract: A surface hardening method for resins and a surface hardened resin, capable of reforming the surface of a plastic disk substrate at low energy in a short time, and a production device of such a resin is disclosed. The formation of an ion-implanted layer 11 by implanting equal to or more than 1017 carbon ions per cm2 into the surface of a plastic disk substrate 10 at equal to or less than 20 KeV and the formation of a thin film 12 of high hardness on the ion-implanted layer 11 can be performed alternately or simultaneously, and the hardening rate is increased further by using a bias device.

Abstract: A laser ablation type ion source including vacuum chambers provided with a retaining section for holding a solid raw material for the generation of ions, an ion extracting electrode, an ion accelerating electrode, and a mass spectrograph for ion separation. The ion source also includes a laser beam source for injecting a laser beam of high density into the vacuum chamber.

Abstract: A material of ions is sputtered with cesium ions to generate negative ions and, the negative ions are accelerated and mass-separated to obtain a negative ion beam, and a material of thin film is sputtered with the negative ion beam, thereby forming a thin film on a base material.

Abstract: A method for the extraction of an ion current from a space of a high degree of vacuum into a space of a low degree of vacuum comprises interposing between the space of the high degree of vacuum and the space of the low degree of vacuum an ion current thin film formed of a member having a uniform crystal orientation and causing the ion current to pass from the space of the high degree of vacuum through the thin film into the space of the low degree of vacuum.