Abstract: To provide a semiconductor device capable of reducing a parasitic capacitance, securing high reliability, and suppressing an increase in manufacturing cost. A semiconductor device is provided which includes a substrate including an embedded insulation film and a semiconductor layer on the embedded insulation film and on which a semiconductor element is formed and a gate electrode on the semiconductor layer, in which the gate electrode includes a band-shaped first electrode portion that extends from a center portion of the semiconductor layer and beyond an end of the semiconductor layer along a first direction in a case where the substrate is viewed from above, and in a cross section in a case where the first electrode portion and the substrate are cut along the first direction, a film thickness of the end of the semiconductor layer is thicker than a film thickness of the center portion of the semiconductor layer.

Abstract: To provide a semiconductor device capable of reducing a parasitic capacitance, securing high reliability, and suppressing an increase in manufacturing cost. A semiconductor device is provided which includes a substrate including an embedded insulation film and a semiconductor layer on the embedded insulation film and on which a semiconductor element is formed and a gate electrode on the semiconductor layer, in which the gate electrode includes a band-shaped first electrode portion that extends from a center portion of the semiconductor layer and beyond an end of the semiconductor layer along a first direction in a case where the substrate is viewed from above, and in a cross section in a case where the first electrode portion and the substrate are cut along the first direction, a film thickness of the end of the semiconductor layer is thicker than a film thickness of the center portion of the semiconductor layer.

Abstract: A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between.

Abstract: A high-frequency semiconductor device, wherein on one surface of a semiconductor substrate, a first insulating layer, an undoped epitaxial polysilicon layer in a state of column crystal, a second insulating layer, and a semiconductor layer are formed in order from a side of the one surface, and a high-frequency transistor is formed in a location of the semiconductor layer facing the undoped epitaxial polysilicon layer with the second insulating layer in between.

Abstract: A semiconductor device includes: an epitaxial substrate formed by stacking a plurality of kinds of semiconductors over one semiconductor substrate by epitaxial growth; a field effect transistor of a first conductivity type formed in a first region; a field effect transistor of a second conductivity type formed in a second region; and a protective element formed in a third region. The protective element includes: a first stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction; and a second stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction. The protective element has two PN junctions on a current path formed between an upper end of the first stacking structure and an upper end of the second stacking structure via a base part of the first stacking structure and the second stacking structure.

Abstract: A semiconductor device including at least a p-channel field-effect transistor region formed above a compound semiconductor substrate. The p-channel field-effect transistor region includes an undoped buffer layer; a p-type channel layer formed in contact with the buffer layer; a p-type source region and a p-type drain region formed in the channel layer, being separated with each other; and an n-type gate region formed above the channel layer and between the source region and the drain region. The buffer layer is formed having either a multilayer structure including a hole diffusion control layer with a band gap larger than the channel layer, or a single layer structure including only the hole diffusion control layer.

Abstract: A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.

Abstract: A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.

Abstract: A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.

Abstract: A semiconductor device including at least a p-channel field-effect transistor region formed above a compound semiconductor substrate. The p-channel field-effect transistor region includes an undoped buffer layer; a p-type channel layer formed in contact with the buffer layer; a p-type source region and a p-type drain region formed in the channel layer, being separated with each other; and an n-type gate region formed above the channel layer and between the source region and the drain region. The buffer layer is formed having either a multilayer structure including a hole diffusion control layer with a band gap larger than the channel layer, or a single layer structure including only the hole diffusion control layer.

Abstract: A semiconductor device includes: a first transistor formed on a semiconductor substrate; and a second transistor formed above the semiconductor substrate with an insulation film interposed therebetween. The first transistor includes a first body region formed on a surface of the semiconductor substrate, and a first source region and a first drain region formed so as to sandwich the first body region, the second transistor includes a semiconductor layer formed on the insulation film, a second body region formed in a part of the semiconductor layer, a second source region and a second drain region formed so as to sandwich the second body region in the semiconductor layer, agate insulation film formed on the body region of the semiconductor layer, and agate electrode formed on the gate insulation film, and the second drain region is disposed on the first body region.

Abstract: A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.