Abstract: A heating apparatus 11A includes a susceptor having a heating face 12a of heating a semiconductor. The susceptor includes a plate shaped main body 13 and a surface corrosion resistant layer 14 including the heating face. The surface corrosion resistant layer 14 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2?=47 to 50° by CuK? X-ray.

Abstract: An electrostatic chuck 1A includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor 11A includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2?=47 to 50° by CuK? X-ray.

Abstract: A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.

Abstract: A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40° C. to 570° C., a thermal conductivity of 100 W/m·K or more, and a four-point bending strength of 300 MPa or more.

Abstract: Each of electrostatic chucks 1A to 1F includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising MgO—AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.

Abstract: A laminated structure 10 includes a first structure 12 containing a main phase of magnesium-aluminum oxynitride, a second structure 14 containing a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layer 15 formed between the first structure 12 and the second structure 14. The reaction layer 15 is an aluminum nitride layer containing a smaller amount of grain boundary phases 18 of the rare-earth aluminum composite oxide than the second structure 14. The reaction layer 15 of the laminated structure 10 has a thickness of 150 ?m or less. The reaction layer 15 is formed during the sintering by diffusing the grain boundary phases 18 into the first structure 12.

Abstract: A ceramic material of the present invention contains magnesium, zirconium, lithium, and oxygen as main components. The crystal phase of a solid solution obtained by dissolving zirconium oxide and lithium oxide in magnesium oxide is a main phase. The XRD peak of a (200) plane of the solid solution with CuK? rays preferably appears at 2?=42.89° or less which is smaller than an angle at which a peak of a cubic crystal of magnesium oxide appears. The XRD peak more preferably appears at 2?=42.38° to 42.89° and further preferably at 2?=42.82° to 42.89°. In the ceramic material, the molar ratio Li/Zr of Li to Zr is preferably in the range of 1.96 or more and 2.33 or less.

Abstract: The present invention provides a ceramic material comprising magnesium, gallium, lithium, and oxygen as main components, wherein a crystal phase of a solid solution attained by dissolving gallium oxide and lithium oxide in magnesium oxide is a main phase. An XRD peak of a (200) plane of the solid solution with CuK? rays preferably appears at 2?=42.91° or more which is larger than an angle at which a peak of a Cubic crystal of magnesium oxide appears, more preferably appears at 2?=42.91° to 43.28°, and further preferably appears at 2?=42.91° to 43.02°. In the ceramic material, a molar ratio Li/Ga of Li to Ga is preferably 0.80 or more and 1.20 or less.

Abstract: A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 ?m to 1 ?m and a specific surface area in a range of 5 m2/g to 20 m2/g. The aluminum oxide has an average particle diameter in a range of 0.4 ?m to 10 ?m, a specific surface area in a range of 0.8 m2/g to 8 m2/g. A volume ratio of the aluminum oxide to the barium silicate is in a range of 10% by volume to 25% by volume.

Abstract: A first bonding material composition according to the present invention is a bonding material composition used when aluminum nitride sintered bodies containing a rare-earth metal oxide are bonded to each other, in which the bonding immaterial composition contains, in addition, to an O element-containing aluminum nitride raw material, (a) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, or (b) as a fluorine compound, at least one of a fluorine compound of an alkaline-earth metal and a fluorine compound of a rare-earth metal, and a rare-earth metal oxide.

Abstract: A thermal spray coating according to the present invention contains mainly magnesium, aluminum, oxygen, and nitrogen and has, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide. The thermal spray coating is obtained by thermal spray of powder of a ceramic material containing mainly magnesium, aluminum, oxygen, and nitrogen and having, as a main phase, a crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved with magnesium oxide.

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers 34 and 35 are formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing SiC, Ti3 SiC2, and TiC. The metal bonding layers 34 and 35 axe formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract: An electrostatic chuck is provided with a ceramic substrate 12 in which an electrode 14 is embedded, an electrode terminal 14a exposed at the bottom of a concave portion 16 disposed on the back surface of the ceramic substrate 12, a power feed member 20 to supply an electric power to the electrode 14, and a joining layer 22 to connect this power feed member 20 to the ceramic substrate 12. The joining layer 22 is formed by using a AuGe based alloy, a AuSn based alloy, or a AuSi based alloy. The ceramic substrate 12 and the power feed member 20 are selected in such a way that the thermal expansion coefficient difference D calculated by subtracting the thermal expansion coefficient of the ceramic substrate 12 from the thermal expansion coefficient of the power feed member 20 satisfies ?2.2?D?6 (unit: ppm/K).

Abstract: A ceramic member 30 according to the present invention includes a ceramic base 32, which contains a solid solution Mg(Al)O(N) in which Al and N components are dissolved in magnesium oxide as the main phase, and an electrode 34 disposed on a portion of the ceramic base 32 and containing at least one of nitrides, carbides, carbonitrides, and metals as an electrode component. The ceramic base 32 may have an XRD peak of a (111), (200), or (220) plane of Mg(Al)O(N) measured using a CiK? ray at 2?=36.9 to 39, 42.9 to 44.8, or 62.3 to 65.2 degrees, respectively, between a magnesium oxide cubic crystal peak and an aluminum nitride cubic crystal peak.

Abstract: A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40° C. to 570° C., a thermal conductivity of 100 W/m·K or more, and a four-point bending strength of 300 MPa or more.

Abstract: A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.

Abstract: A mixed powder was prepared by weighing Yb2O3 and SrCO3 in such a way that the molar ratio became 1:1. The resulting mixed powder was subjected to uniaxial pressure forming, so as to produce a disc-shaped compact. The compact was heat-treated in an air atmosphere, so that a complex oxide was synthesized. The resulting complex oxide was pulverized. After the pulverization, a slurry was taken out and was dried in a nitrogen gas stream, so as to produce a synthesized powder material. The resulting synthesized powder material was subjected to uniaxial pressure forming, so as to produce a disc-shaped compact. The resulting compact was fired by a hot-press method, so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The resulting corrosion-resistant member was made from a SrYb2O4.

Abstract: Initially, an Yb2O3 raw material was subjected to uniaxial pressure forming at a pressure of 200 kgf/cm2, so that a disc-shaped compact having a diameter of about 35 mm and a thickness of about 10 mm was produced, and was stored into a graphite mold for firing. Subsequently, firing was performed by using a hot-press method at a predetermined firing temperature (1,500° C.), so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The press pressure during firing was specified to be 200 kgf/cm2 and an Ar atmosphere was kept until the firing was finished. The retention time at the firing temperature (maximum temperature) was specified to be 4 hours. In this manner, the corrosion-resistant member for semiconductor manufacturing apparatus made from an Yb2O3 sintered body having an open porosity of 0.2% was obtained.

Abstract: A laminated structure 10 includes a first structure 12 containing a main phase of magnesium-aluminum oxynitride, a second structure 14 containing a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layer 15 formed between the first structure 12 and the second structure 14. The reaction layer 15 is an aluminum nitride layer containing a smaller amount of grain boundary phases 18 of the rare-earth aluminum composite oxide than the second structure 14. The reaction layer 15 of the laminated structure 10 has a thickness of 150 ?m or less. The reaction layer 15 is formed during the sintering by diffusing the grain boundary phases 18 into the first structure 12.