Abstract: A semiconductor device includes first and second semiconductor components mounted on an interposer mounted on a wiring substrate, and electrically connected to each other via the interposer. Also, a plurality of wiring layers of the interposer include first, second and third wiring layers which are stacked in order from a main surface side to be a reference. In addition, in a first region of the interposer sandwiched between the first semiconductor component and the second semiconductor component, a ratio of a reference potential wiring in the third wiring layer is higher than a ratio of a reference potential wiring in the first wiring layer. Further, in the first region, a ratio of a signal wiring in the first wiring layer is higher than a ratio of a signal wiring in the third wiring layer.

Abstract: The characteristics of an electronic device can be improved. The electronic device includes a first redistribution layer formed over an upper surface US of a sealing body, and a second redistribution layer formed below a bottom surface of the sealing body. The thickness of the second redistribution layer is smaller than the thickness of the first redistribution layer.

Abstract: According to an embodiment of the present invention, there is provided a semiconductor device having a first semiconductor component and a second semiconductor component which are mounted on a wiring substrate. The first semiconductor component has a first terminal for transmitting a first signal between the first semiconductor component and the outside and a second terminal for transmitting a second signal between the first semiconductor component and the second semiconductor component. In addition, the second semiconductor component has a third terminal for transmitting the second signal between the second semiconductor component and the first semiconductor component. Further, the first signal is transmitted at a higher frequency than the second signal. Furthermore, the second terminal of the first semiconductor component and the third terminal of the second semiconductor component are electrically connected to each other via the first wiring member.

Abstract: A wiring is formed over a semiconductor substrate via an interlayer insulation film, and another interlayer insulation film is formed over the interlayer insulation film so as to cover the wiring, and a pad is formed over the another interlayer insulation film. Over the another interlayer insulation film, a layered film having an opening portion in which a pad is exposed is formed, and a redistribution wiring electrically connected to the pad is formed over the layered film and over the pad exposed in the opening portion. An end portion of the wiring is located below a connection region between the pad and the redistribution wiring. The wiring has a plurality of opening portions formed therein, and at least a part of the plurality of opening portions overlaps with the connection region in plan view.

Abstract: According to an embodiment of the present invention, there is provided a semiconductor device having a first semiconductor component and a second semiconductor component which are mounted on a wiring substrate. The first semiconductor component has a first terminal for transmitting a first signal between the first semiconductor component and the outside and a second terminal for transmitting a second signal between the first semiconductor component and the second semiconductor component. In addition, the second semiconductor component has a third terminal for transmitting the second signal between the second semiconductor component and the first semiconductor component. Further, the first signal is transmitted at a higher frequency than the second signal. Furthermore, the second terminal of the first semiconductor component and the third terminal of the second semiconductor component are electrically connected to each other via the first wiring member.

Abstract: A wiring is formed over a semiconductor substrate via an interlayer insulation film, and another interlayer insulation film is formed over the interlayer insulation film so as to cover the wiring, and a pad is formed over the another interlayer insulation film. Over the another interlayer insulation film, a layered film having an opening portion in which a pad is exposed is formed, and a redistribution wiring electrically connected to the pad is formed over the layered film and over the pad exposed in the opening portion. An end portion of the wiring is located below a connection region between the pad and the redistribution wiring. The wiring has a plurality of opening portions formed therein, and at least a part of the plurality of opening portions overlaps with the connection region in plan view.

Abstract: A semiconductor device includes first and second semiconductor components mounted on an interposer mounted on a wiring substrate, and electrically connected to each other via the interposer. Also, a plurality of wiring layers of the interposer include first, second and third wiring layers which are stacked in order from a main surface side to be a reference. In addition, in a first region of the interposer sandwiched between the first semiconductor component and the second semiconductor component, a ratio of a reference potential wiring in the third wiring layer is higher than a ratio of a reference potential wiring in the first wiring layer. Further, in the first region, a ratio of a signal wiring in the first wiring layer is higher than a ratio of a signal wiring in the third wiring layer.

Abstract: A semiconductor device includes first and second semiconductor components mounted on an interposer mounted on a wiring substrate, and electrically connected to each other via the interposer. Also, a plurality of wiring layers of the interposer include first, second and third wiring layers which are stacked in order from a main surface side to be a reference. In addition, in a first region of the interposer sandwiched between the first semiconductor component and the second semiconductor component, a ratio of a reference potential wiring in the third wiring layer is higher than a ratio of a reference potential wiring in the first wiring layer. Further, in the first region, a ratio of a signal wiring in the first wiring layer is higher than a ratio of a signal wiring in the third wiring layer.

Abstract: A semiconductor device includes first and second semiconductor components mounted on an interposer mounted on a wiring substrate, and electrically connected to each other via the interposer. Also, a plurality of wiring layers of the interposer include first, second and third wiring layers which are stacked in order from a main surface side to be a reference. In addition, in a first region of the interposer sandwiched between the first semiconductor component and the second semiconductor component, a ratio of a reference potential wiring in the third wiring layer is higher than a ratio of a reference potential wiring in the first wiring layer. Further, in the first region, a ratio of a signal wiring in the first wiring layer is higher than a ratio of a signal wiring in the third wiring layer.

Abstract: A semiconductor device that can be readily manufactured, can include a large number of pads, and can be thin, and a method for manufacturing the same are provided. The semiconductor device is characterized in that the semiconductor device includes an LSI chip, an insulating layer provided on the LSI chip and made of a nonphotosensitive resin, the insulating layer including a via hole in the position corresponding to an externally connected pad, and a wiring layer extending along the insulating layer through the via hole to the externally connected pad, and at least part of the via hole is formed by irradiating the insulating layer with laser light.

Abstract: A semiconductor device that can be readily manufactured, can include a large number of pads, and can be thin, and a method for manufacturing the same are provided. The semiconductor device is characterized in that the semiconductor device includes an LSI chip, an insulating layer provided on the LSI chip and made of a nonphotosensitive resin, the insulating layer including a via hole in the position corresponding to an externally connected pad, and a wiring layer extending along the insulating layer through the via hole to the externally connected pad, and at least part of the via hole is formed by irradiating the insulating layer with laser light.

Abstract: In a method for manufacturing a semiconductor device, probe pads are formed simultaneously with formation of an intermediate conductive layer, and a test operation is performed upon the semiconductor device by placing probes on the probe pads. Then, post-stage processes are performed upon the semiconductor device in accordance with characteristics of the semiconductor device obtained by the test operation.

Abstract: In a method for manufacturing a semiconductor device, probe pads are formed simultaneously with formation of an intermediate conductive layer, and a test operation is performed upon the semiconductor device by placing probes on the probe pads. Then, post-stage processes are performed upon the semiconductor device ill accordance with characteristics of the semiconductor device obtained by the test operation.

Abstract: In a method for manufacturing a semiconductor device, probe pads are formed simultaneously with formation of an intermediate conductive layer, and a test operation is performed upon the semiconductor device by placing probes on the probe pads. Then, post-stage processes are performed upon the semiconductor device in accordance with characteristics of the semiconductor device obtained by the test operation.